Patents by Inventor Satyadev Nagaraia

Satyadev Nagaraia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Backside illuminated imaging sensor with reduced leakage photodiode
    Patent number: 8212901
    Abstract: A backside illuminated imaging sensor includes a semiconductor having an imaging pixel that includes a photodiode region, an insulator, and a silicide reflective layer. The photodiode region is formed in the frontside of the semiconductor substrate. The insulation layer is formed on the backside of the semiconductor substrate. The transparent electrode formed on the backside of the insulation layer. The transparent electrode allows light to be transmitted through a back surface of the semiconductor substrate such that when the transparent electrode is biased, carriers are formed in a region in the backside of the semiconductor substrate to reduce leakage current. ARC layers can be used to increase sensitivity of the sensor to selected wavelengths of light.
    Type: Grant
    Filed: September 5, 2008
    Date of Patent: July 3, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sohei Manabe, Satyadev Nagaraia
  • BACKSIDE ILLUMINATED IMAGING SENSOR WITH REDUCED LEAKAGE PHOTODIODE
    Publication number: 20090201395
    Abstract: A backside illuminated imaging sensor includes a semiconductor having an imaging pixel that includes a photodiode region, an insulator, and a silicide reflective layer. The photodiode region is formed in the frontside of the semiconductor substrate. The insulation layer is formed on the backside of the semiconductor substrate. The transparent electrode formed on the backside of the insulation layer. The transparent electrode allows light to be transmitted through a back surface of the semiconductor substrate such that when the transparent electrode is biased, carriers are formed in a region in the backside of the semiconductor substrate to reduce leakage current. ARC layers can be used to increase sensitivity of the sensor to selected wavelengths of light.
    Type: Application
    Filed: September 5, 2008
    Publication date: August 13, 2009
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Sohei Manabe, Satyadev Nagaraia