Abstract: In a method for estimating a complexity of a computing job, selected data objects relevant to a data repository are retrieved. In addition, points are assigned to multiple elements of the selected data objects according to a predefined schedule and scores for the selected data objects are calculated by applying a mathematical function to the multiple elements and complexities of the data objects are estimated based upon the calculated scores and the predefined schedule. In addition, a complexity of the computing job is estimated based upon the estimated complexities of the data objects and the estimated complexity of the computing job is stored.

Abstract: A method for bonding IC die to TSV wafers includes bonding at least one singulated IC die to respective ones of a plurality of IC die on a TSV wafer that includes a top semiconductor surface and TSV precursors including embedded TSV tips to form a die-wafer stack. The die-wafer stack is thinned beginning from the bottom surface of the TSV wafer to form a thinned die-wafer stack. The thinning includes exposing the embedded TSV tips to provide electrical access thereto from the bottom surface of the TSV wafer. The thinned die-wafer stack can be singulated to form a plurality of thinned die stacks.

Abstract: In a method for estimating a complexity of a computing job, selected data objects relevant to a data repository are retrieved. In addition, points are assigned to multiple elements of the selected data objects according to a predefined schedule and scores for the selected data objects are calculated by applying a mathematical function to the multiple elements and complexities of the data objects are estimated based upon the calculated scores and the predefined schedule. In addition, a complexity of the computing job is estimated based upon the estimated complexities of the data objects and the estimated complexity of the computing job is stored.

Abstract: A method for bonding IC die to TSV wafers includes bonding at least one singulated IC die to respective ones of a plurality of IC die on a TSV wafer that includes a top semiconductor surface and TSV precursors including embedded TSV tips to form a die-wafer stack. The die-wafer stack is thinned beginning from the bottom surface of the TSV wafer to form a thinned die-wafer stack. The thinning includes exposing the embedded TSV tips to provide electrical access thereto from the bottom surface of the TSV wafer. The thinned die-wafer stack can be singulated to form a plurality of thinned die stacks.

Abstract: A package, comprising a substrate having a surface comprising metal traces, a solder mask covering at least a portion of the surface of the substrate, and a first aperture through the solder mask exposing a plurality of metal traces.

Abstract: A package is disclosed, which includes a substrate, a solder masker, and a first aperture through the solder mask. The substrate has a surface on which metal traces are formed. The solder mask covers at least a portion of the surface of the substrate. And the first aperture through the solder mask exposes a plurality of the metal traces.