Patents by Inventor Satyendra K. Deb

Satyendra K. Deb has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5384653
    Abstract: A variable transmittance double pane window includes an electrochromic material that has been deposited on one pane of the window in conjunction with an array of photovoltaic cells deposited along an edge of the pane to produce the required electric power necessary to vary the effective transmittance of the window. A battery is placed in a parallel fashion to the array of photovoltaic cells to allow the user the ability to manually override the system when a desired transmittance is desired.
    Type: Grant
    Filed: November 6, 1992
    Date of Patent: January 24, 1995
    Assignee: Midwest Research Institute
    Inventors: David K. Benson, Richard S. Crandall, Satyendra K. Deb, Jack L. Stone
  • Patent number: 4324622
    Abstract: Electrophotographic element typically comprising in sandwiched arrangement a transition metal oxide layer and a photoconductive layer. When an electric field is applied across the element, preferably after inserting the element between a pair of electrode layers, and an optical image is projected onto the photoconductive layer, the resulting conductivity pattern in the photoconductive layer causes corresponding coloration in the transition metal oxide layer, thereby visibly recording the optical image.
    Type: Grant
    Filed: March 7, 1977
    Date of Patent: April 13, 1982
    Assignee: American Cyanamid Company
    Inventor: Satyendra K. Deb
  • Patent number: 4266338
    Abstract: Photoelectrochemical cell structures and methods of fabrication are disclosed which provide for easily manufactured efficient energy conversion devices. The structures incorporate one or more chambers for the electrolyte, and utilize semiconductor photoelectrodes. In the plural chamber structure, the semiconductor may be opaque, and need not necessarily be a thin film. Specific dopants for the semiconductor provide for decreased dark current and increased open circuit voltage. Post deposition treatment is disclosed for the semiconductor to provide an increased shorting current. Increased sputtering wattage is provided to increase the short circuit current available from the cell. An electrolyte composition is described having improved performance at high light intensity.
    Type: Grant
    Filed: March 14, 1979
    Date of Patent: May 12, 1981
    Assignees: Grumman Aerospace, Refac Electronics
    Inventors: Schoen-nan Chen, Michael A. Russak, Horst Witzke, Joseph Reichman, Satyendra K. Deb
  • Patent number: 4172925
    Abstract: Photoelectrochemical cell structures and methods of fabricaton are disclosed which provide for easily manufactured efficient energy conversion devices. The structures incorporate one or more chambers for the electrolyte, and utilize semiconductor photoelectrodes. In the plural chamber structure, the semiconductor may be opaque, and need not necessarily be a thin film. Specific dopants for the semiconductor provide for decreased dark current and increased open circuit voltage. Post deposition treatment is disclosed for the semiconductor to provide an increased shorting current. Increased sputtering wattage is provided to increase the short circuit current available from the cell. An electrolyte composition is described having improved performance at high light intensity.In a multi-chamber embodiment, the electrode placement causes the photoactive site to be at an end of the chamber removed from the irradiation window, thereby permitting the use of non-transparent photoelectrodes.
    Type: Grant
    Filed: February 22, 1978
    Date of Patent: October 30, 1979
    Assignees: Refac Electronics Corporation, Grumman Aerospace Corporation
    Inventors: Schoen-nan Chen, Michael A. Russak, Horst Witzke, Joseph Reichman, Satyendra K. Deb
  • Patent number: 4118547
    Abstract: A sealed device includes an electrode having a semiconductor thin film coating. A liquid electrolyte contacts the thin film to form a photoactive interface which converts light energy to electrical energy. A counterelectrode is positioned in spaced relation to the electrode and also contacts the electrolyte. Leads are connected to the electrode and counterelectrode so that a load may be driven by the device when the device is exposed to light.
    Type: Grant
    Filed: January 27, 1977
    Date of Patent: October 3, 1978
    Assignees: Optel Corporation, Grumman Aerospace Corporation
    Inventors: Horst Witzke, Schoen-nan Chen, Satyendra K. Deb, Steven Robert Jost, Joseph Reichman, Michael A. Russak
  • Patent number: 4118546
    Abstract: A photogalvanic cell includes a glass substrate with a transparent electrode which receives irradiating light energy. A second electrode is positioned in spaced relationship from the first electrode and has a thin film of charge storing tungsten oxide deposited thereon. Spaced from both the transparent electrode and the tungsten oxide thin film is a counterelectrode. An electrolyte having TiO.sub.2 powder mixed therein forms a photoactive site at the surface of the transparent electrode. By physically separating the tungsten oxide thin film from the transparent electrode, more light irradiates the TiO.sub.2 thereby increasing the photoconversion of the cell.
    Type: Grant
    Filed: January 27, 1977
    Date of Patent: October 3, 1978
    Assignees: Optel Corporation, Grumman Aerospace Corporation
    Inventors: Horst Witzke, Schoen-nan Chen, Satyendra K. Deb, Michael A. Russak
  • Patent number: 4117210
    Abstract: A photogalvanic cell includes a conducting SnO.sub.2 electrode upon which is deposited a semi-transparent film of Ti. A metal oxide thin film, such as TiO.sub.2 is in turn deposited upon the semi-transparent Ti thin film. An aqueous (acid or base) electrolyte contacts the metal oxide thin film to form a photoactive site for converting light to electrical energy. The semi-transparent film reduces the internal resistance of the cell by assisting charge transfer between the metal oxide film and the electrode. Also, use of a semi-transparent film permits bi-directional irradiation of the cell to increase photoconversion efficiency.
    Type: Grant
    Filed: January 27, 1977
    Date of Patent: September 26, 1978
    Assignees: Optel Corporation, Grumman Aerospace Corporation
    Inventors: Satyendra K. Deb, Schoen-nan Chen, Horst Witzke, Michael A. Russak, Joseph Reichman
  • Patent number: 4080488
    Abstract: A photogalvanic cell has a glass substrate through which irradiating light passes. A light transparent conductive thin film serves as an electrode, the film being deposited upon the glass substrate. Another layer is an electrolyte and includes an aqueous medium having TiO.sub.2 suspended therein, the TiO.sub.2 forming photoactive sites with the remaining ingredients of the electrolyte. The electrolyte layer further includes N-methylphenazine methosulfate dye which has photoconversion and electrical storage properties. During irradiation the cell may drive a load, or stored energy resulting from irradiation may drive a load after the source of irradiation is removed.
    Type: Grant
    Filed: November 11, 1976
    Date of Patent: March 21, 1978
    Assignees: Optel Corporation, Grumman Aerospace Corporation
    Inventors: Schoen-Nan Chen, Satyendra K. Deb, Horst Witzke