Patents by Inventor Savitha Nanjangud

Savitha Nanjangud has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9710903
    Abstract: Various systems and methods for detecting design and process defects on a wafer, reviewing defects on a wafer, selecting one or more features within a design for use as process monitoring features, or some combination thereof are provided. One system is configured to detect design defects and process defects at locations on a wafer at which images are acquired by an electron beam review subsystem based on defects in a design, additional defects in the design, which are detected by comparing an image of a die in the design printed on the wafer acquired by the electron beam review subsystem to an image of the die stored in a database, and defects detected on the wafer by a wafer inspection system.
    Type: Grant
    Filed: June 5, 2009
    Date of Patent: July 18, 2017
    Assignee: KLA-Tencor Corp.
    Inventors: Christophe Fouquet, Zain Saidin, Sergio Edelstein, Savitha Nanjangud, Carl Hess
  • Publication number: 20110276935
    Abstract: Various systems and methods for detecting design and process defects on a wafer, reviewing defects on a wafer, selecting one or more features within a design for use as process monitoring features, or some combination thereof are provided.
    Type: Application
    Filed: June 5, 2009
    Publication date: November 10, 2011
    Applicant: KLA-TENCOR CORPORATION
    Inventors: Christophe Fouquet, Zain Saidin, Sergio Edelstein, Savitha Nanjangud, Carl Hess
  • Patent number: 6632124
    Abstract: An optical monitoring system for a two-step polishing process which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance traces indicate initial clearance of the metal layer, and polishing may halt when all of the reflectance traces indicate that oxide layer has been completely exposed.
    Type: Grant
    Filed: January 10, 2003
    Date of Patent: October 14, 2003
    Assignee: Applied Materials Inc.
    Inventors: Bret W. Adams, Boguslaw A. Swedek, Rajeev Bajaj, Savitha Nanjangud, Andreas Norbert Wiswesser, Stan D. Tsai, David A. Chan, Fred C. Redeker, Manoocher Birang
  • Publication number: 20030104760
    Abstract: An optical monitoring system for a two-step polishing process which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance traces indicate initial clearance of the metal layer, and polishing may halt when all of the reflectance traces indicate that oxide layer has been completely exposed.
    Type: Application
    Filed: January 10, 2003
    Publication date: June 5, 2003
    Applicant: Applied Materials, Inc. a Delaware corporation
    Inventors: Bret W. Adams, Boguslaw A. Swedek, Rajeev Bajaj, Savitha Nanjangud, Andreas Norbert Wiswesser, Stan D. Tsai, David A. Chan, Fred C. Redeker, Manoocher Birang
  • Patent number: 6506097
    Abstract: An optical monitoring system for a two-step polishing process which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance traces indicate initial clearance of the metal layer, and polishing may halt when all of the reflectance traces indicate that oxide layer has been completely exposed.
    Type: Grant
    Filed: January 16, 2001
    Date of Patent: January 14, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Bret W. Adams, Boguslaw A. Swedek, Rajeev Bajaj, Savitha Nanjangud, Andreas Norbert Wiswesser, Stan D. Tsai, David A. Chan, Fred C. Redeker, Manoocher Birang
  • Publication number: 20030003845
    Abstract: An optical monitoring system for a two-step polishing process which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance traces indicate initial clearance of the metal layer, and polishing may halt when all of the reflectance traces indicate that oxide layer has been completely exposed.
    Type: Application
    Filed: January 16, 2001
    Publication date: January 2, 2003
    Inventors: Bret W. Adams, Boguslaw A. Swedek, Rajeev Bajaj, Savitha Nanjangud, Andreas Norbert Wiswesser, Stan D. Tsai, David A. Chan, Fred C. Redeker, Manoocher Birang