Patents by Inventor Savithri Sundareswaran

Savithri Sundareswaran has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9465899
    Abstract: A method of provisioning an integrated circuit with decoupling capacitance includes identifying in an initial design of the integrated circuit lacking decoupling elements, a standard cell instance satisfying a transient power or frequency switching criteria. Based on a transient power characteristic of the standard cell instance, a decoupling capacitance requirement for the standard cell instance is determined. The decoupling capacitance requirement indicates a capacitance sufficient to bring the standard cell instance into compliance with a stability constraint on a supply voltage node of the standard cell instance. A decoupling capacitor satisfying the decoupling capacitance requirement is provisioned by appending an appropriate sized decap transistor having one or more gate electrode elements to the standard cell instance.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: October 11, 2016
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Savithri Sundareswaran, Benjamin S. Huang, Ravi K. Vaidyanathan
  • Patent number: 9264040
    Abstract: A CMOS cell incorporated on an integrated circuit including a PMOS transistor and an NMOS transistor. The current terminals of the PMOS and NMOS transistors are coupled in series between a lower voltage supply rail and a reference rail. The well connection of the PMOS transistor is coupled to an upper voltage supply rail having a voltage level greater than the lower voltage supply rail. The CMOS cell has low voltage swing and low leakage current to reduce power consumption. A second PMOS and NMOS transistor pair may be included and coupled in similar manner and to the first PMOS and NMOS pair to form a non-inverting cell. The PMOS transistors may be implemented in an N-well that is conductively tied to the upper supply voltage rail to avoid isolation barriers. The cell may be used in a clock tree to significantly reduce power consumption of the integrated circuit.
    Type: Grant
    Filed: December 19, 2013
    Date of Patent: February 16, 2016
    Assignee: FREESCALE SEMICONDUCTOR, INC.
    Inventors: Savithri Sundareswaran, Alexander B. Hoefler, Benjamin S. Huang, Anis M. Jarrar
  • Patent number: 9177096
    Abstract: An approach is provided in which a design tool executes static timing analysis of an integrated circuit design using a first set of timing values corresponding to a first set of layout properties of a transistor included in a standard cell utilized by the integrated circuit design. When the design tool determines that the static timing analysis generates a timing violation within a violation budget, the design tool selects a second set of timing values of the standard cell corresponding to a second set of layout properties of the transistor. The design tool determines that re-execution of the static timing analysis using the second set of timing values resolves the timing violation and, in turn, generates mask layer data that includes the second set of layout properties.
    Type: Grant
    Filed: March 26, 2014
    Date of Patent: November 3, 2015
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Savithri Sundareswaran, James A. Tuvell
  • Publication number: 20150278425
    Abstract: An approach is provided in which a design tool executes static timing analysis of an integrated circuit design using a first set of timing values corresponding to a first set of layout properties of a transistor included in a standard cell utilized by the integrated circuit design. When the design tool determines that the static timing analysis generates a timing violation within a violation budget, the design tool selects a second set of timing values of the standard cell corresponding to a second set of layout properties of the transistor. The design tool determines that re-execution of the static timing analysis using the second set of timing values resolves the timing violation and, in turn, generates mask layer data that includes the second set of layout properties.
    Type: Application
    Filed: March 26, 2014
    Publication date: October 1, 2015
    Inventors: Savithri Sundareswaran, James A. Tuvell
  • Publication number: 20150180452
    Abstract: A CMOS cell incorporated on an integrated circuit including a PMOS transistor and an NMOS transistor. The current terminals of the PMOS and NMOS transistors are coupled in series between a lower voltage supply rail and a reference rail. The well connection of the PMOS transistor is coupled to an upper voltage supply rail having a voltage level greater than the lower voltage supply rail. The CMOS cell has low voltage swing and low leakage current to reduce power consumption. A second PMOS and NMOS transistor pair may be included and coupled in similar manner and to the first PMOS and NMOS pair to form a non-inverting cell. The PMOS transistors may be implemented in an N-well that is conductively tied to the upper supply voltage rail to avoid isolation barriers. The cell may be used in a clock tree to significantly reduce power consumption of the integrated circuit.
    Type: Application
    Filed: December 19, 2013
    Publication date: June 25, 2015
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventors: Savithri Sundareswaran, Alexander B. Hoefler, Benjamin S. Huang, Anis M. Jarrar
  • Publication number: 20140282340
    Abstract: A method of provisioning an integrated circuit with decoupling capacitance includes identifying in an initial design of the integrated circuit lacking decoupling elements, a standard cell instance satisfying a transient power or frequency switching criteria. Based on a transient power characteristic of the standard cell instance, a decoupling capacitance requirement for the standard cell instance is determined. The decoupling capacitance requirement indicates a capacitance sufficient to bring the standard cell instance into compliance with a stability constraint on a supply voltage node of the standard cell instance. A decoupling capacitor satisfying the decoupling capacitance requirement is provisioned by appending an appropriate sized decap transistor having one or more gate electrode elements to the standard cell instance.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventors: Savithri Sundareswaran, Benjamin S. Huang, Ravi K. Vaidyanathan
  • Patent number: 8656331
    Abstract: An approach is provided in which a system executes transistor-level circuit simulation of a standard cell that includes parameters corresponding to a semiconductor manufacturing technology process. Sensitivity data is collected that quantifies changes to performance metrics corresponding to the standard cell in response to adjusting one or more of the parameters during the transistor-level circuit simulation. In turn, the system generates derate factors based upon the sensitivity data and tests an integrated circuit design according to the derate factors. Testing the integrated circuit design includes performing static timing analysis on the integrated circuit design that simulates operation of a device built from the integrated circuit design using the semiconductor technology process. In one embodiment, when the static timing analysis indicates timing violations, the system dynamically generates custom derate factors for particular cell instances corresponding to the timing violations.
    Type: Grant
    Filed: February 14, 2013
    Date of Patent: February 18, 2014
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Savithri Sundareswaran, Surya Veeraraghavan
  • Patent number: 8618838
    Abstract: An integrated circuit includes a first plurality of transistors and a second plurality of transistors coupled together to form a standard cell that performs a logic function. Each of the first plurality of transistors is more critical to a speed of operation of the standard cell than any of the transistors of the second plurality of transistors. Each of the first plurality of transistors has a gate length longer than a gate length of any of the transistors of the second plurality of transistors.
    Type: Grant
    Filed: September 15, 2011
    Date of Patent: December 31, 2013
    Assignee: Freescale Semiconductor, Inc.
    Inventor: Savithri Sundareswaran
  • Patent number: 8612915
    Abstract: Embodiments of systems and methods for leakage reduction of a cell are presented herein. According to one embodiment, a path module can identify each rail-to-rail path in a cell. In the embodiment, a transistor set module can select one or more transistors that are coupled to a rail of the cell and, if removed, no rail-to-rail path would exist in the cell. A layout modification module can transform the cell by upsizing a gate length of each transistor of the selected transistors to create a low-leakage version of the cell.
    Type: Grant
    Filed: September 7, 2012
    Date of Patent: December 17, 2013
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Savithri Sundareswaran, Robert L. Maziasz
  • Publication number: 20130069691
    Abstract: An integrated circuit includes a first plurality of transistors and a second plurality of transistors coupled together to form a standard cell that performs a logic function. Each of the first plurality of transistors is more critical to a speed of operation of the standard cell than any of the transistors of the second plurality of transistors. Each of the first plurality of transistors has a gate length longer than a gate length of any of the transistors of the second plurality of transistors.
    Type: Application
    Filed: September 15, 2011
    Publication date: March 21, 2013
    Inventor: Savithri Sundareswaran
  • Patent number: 7571404
    Abstract: A semiconductor power network decoupling capacitance (decap) budgeting problem is formulated to minimize the total decap to be added to the network subject to voltage constraints on the network nodes of a semiconductor circuit design. Voltage constraints on the decap to be added are taken into consideration such that the decap can be distributed throughout a hot spot region of the semiconductor circuit design and not be limited to placement at a single location in the circuit. Dynamic network voltages are at all times maintained greater than a user-specified threshold voltage level.
    Type: Grant
    Filed: December 5, 2006
    Date of Patent: August 4, 2009
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Min Zhao, Rajendran V. Panda, Savithri Sundareswaran
  • Publication number: 20080134103
    Abstract: A semiconductor power network decoupling capacitance (decap) budgeting problem is formulated to minimize the total decap to be added to the network subject to voltage constraints on the network nodes of a semiconductor circuit design. Voltage constraints on the decap to be added are taken into consideration such that the decap can be distributed throughout a hot spot region of the semiconductor circuit design and not be limited to placement at a single location in the circuit. Dynamic network voltages are at all times maintained greater than a user-specified threshold voltage level.
    Type: Application
    Filed: December 5, 2006
    Publication date: June 5, 2008
    Inventors: MIN ZHAO, RAJENDRAN V. PANDA, SAVITHRI SUNDARESWARAN