Abstract: A CCD structure includes a substrate in which a plurality of buried channels have been formed and a heat conductor disposed transversely to the buried channels and defining a longitudinal direction. A first channel defines a channel direction. The heat conductor includes a first segment and a second segment separated by a gap from the first segment. The heat conductor further includes a tab connected to the first segment. In the structure the tab is characterized by an extent along a direction parallel to the longitudinal direction that is equal to an extent of the gap along the longitudinal direction, an extent along a direction perpendicular to the longitudinal direction that is equal to a width of the heat conductor, and a shape that is a parallelogram, preferrably a rectangle. In the structure the gap is characterized by a gap predetermined shape, size and orientation, and the tab is characterized by a tab predetermined shape, size and orientation.

Abstract: A switched CCD electrode photodetector includes a substrate made of first semi-conductor type, a drain made of a second semi-conductor type formed in the substrate, a collection well made of the second semi-conductor type formed in the substrate, and a switched CCD electrode resistor formed between the drain and the collection well. The collection well is operable in cooperation with a photosensitive region. The switched CCD electrode resistor includes a channel region defined in the substrate and having a first end disposed adjacent to the collection well and a second end disposed adjacent to the drain. The switched CCD electrode resistor also includes a first electrode insulatively spaced from and disposed over the first end and a second electrode insulatively spaced from and disposed over the second end.

Abstract: A dual mode high frequency output structure for a CCD image sensor has a differencing mode for determining a difference between a charge of successive charge packets of a first pulse train outputted from a shift register of the CCD image sensor and a non-differencing mode for outputting a video signal from the shift register of the CCD image sensor.

Abstract: Silicon-germanium devices including MOSFETs, photogates and photodiodes, are produced by implanting the Si or polycrystalline silicon substrate with Ge.sup.+, to realize active SiGe regions within Si which are substantially free from defects, at an appropriate point in the fabrication by conventional techniques.

Abstract: A wide dynamic range photodetector comprising a photosensitive region for generating signal electrons in response to being illuminated, a collection region for storing the signal electrons generated within the photosensitive region, a shift register for receiving and outputing the signal electrons from the collection region, and a transfer gate intermediate the photosensitive region and the collection region for alternately facilitating transfer of the signal electrons from the photosensitive region for storage in the collection region, and isolating the photosensitive region from the collection region while the signal electrons are being output via the shift register.

Abstract: An electronically and mechanically expandable camera in which a tubular metal casing having removable front and back plates has a CCD image sensor mounted on a secondary front plate removably received within the casing for a direct thermal path to the casing. A driver board is removably receivable at a position between the secondary front plate and the back plate. A logic board is removably receivable at a position between the driver board and the back plate. The camera's functions may be expanded or altered by adding option electronic board modules between the logic board and the back plate of the camera, or by reconfiguring the logic board or by adding a different image sensor. All of the components within the camera, all of the enclosure elements and all of the mounting hardware used in the camera can be easily and conveniently changed as desired.

Abstract: Two unknown charge packets are stored in adjacent potential wells of equal depth in a charge coupled device. The charge packets are then merged by changing the potential on an intermediate merge electrode to remove a potential barrier between the two wells. The potential barrier is then re-established, and a current is induced through one of the electrodes which established the two wells of equal depth, and that current is integrated as a measure of the original absolute difference between the two charge packets.

Abstract: The Laplacian operator is obtained by using CCD architecture to provide positive and negative weights to respective inputs and then combining the weighted signals.

Abstract: This CCD structure comprises a substrate floating diffusion region from which an output signal is taken and a drain diffusion spaced apart from the output diffusion and from which the charge is returned. An electrode to be pulsed is placed immediately preceding the floating diffusion and a plurality of electrodes is interposed between the two diffusions. The first such electrode beyond the output floating diffusion is operated as a reset pulse gate electrode and the last such electrode before the drain diffusion is operated as a drain pulse gate electrode, while the intermediate electrode(s) have phased clock pulses applied thereto in synchronism with such phased clock pulses applied to other electrodes of the overall CCD circuit arrangement. The preceding pulsed electrode serves to extend the lower limit of the potential change of the floating diffusion.

Abstract: An integrable photodetector element of large dynamic range includes a silicon substrate which has a resistivity of between 1 and 100 ohm-cm. The substrate is of one conductivity type. In the substrate there is an electrically floating photosensitive diffusion region and a second diffusion region that is spaced apart from the electrically floating region by means of a channel in the substrate. The two diffusion regions are of the same conductivity type and of opposite conductivity type to that of the substrate. A metal-insulator-semiconductor gate spans the substrate between the regions and over the channel. The gate is electrically connected to the electrically floating region, and the second region is reverse biased with respect to the substrate. Except for the photosensitive diffusion region, the element is shielded against penetration by visible light.

Abstract: A silicon photoelement imager which includes a photogeneration channel consisting of a layer of doped semiconductor material, located on a support substrate having a layer of oppositely doped semiconductor material. The photogeneration channel, in which carriers are photogenerated, has an optimum effective thickness of d/.pi., where d is the center to center spacing of the photoelements; while the support substrate is sufficiently thick to provide strength and rigidity to the device. The support substrate layer is further biased with respect to the photogeneration channel so as to drain and prevent any carriers produced in the support substrate from entering the photogeneration channel. This photogeneration channel substrate structure can be used to improve the spatial resolution of CCD and MOSFET imagers.