Abstract: An electrical machine comprises a stator and a housing. The housing has an internal bore. The stator comprises an annular core mounted within the bore of the housing. The core comprises at least one key projecting radially outwardly from a radially outer surface thereof. The housing comprises at least one keyway in the bore. The at least one key of the core being received within the at least one keyway of the housing.

Abstract: An electric motor/generator includes a stator, a rotor with a plurality of magnets and a rotor frame arranged to support the plurality of magnets in an outer rotor configuration so that the plurality of magnets are arranged to form an annular ring surrounding the stator. The electric motor/generator also includes a banding sleeve disposed on a circumferential portion of the rotor frame radially outwardly of the plurality of magnets. The banding sleeve may comprise a composite material such as a carbon fibre composite.

Abstract: An electrical machine comprises a stator and a housing. The housing has an internal bore. The stator comprises an annular core mounted within the bore of the housing. The core comprises at least one key projecting radially outwardly from a radially outer surface thereof. The housing comprises at least one keyway in the bore. The at least one key of the core being received within the at least one keyway of the housing.

Abstract: Image detectors and scanners employing n.sup.+ - p photodiodes as the photosensitive element tend to have a low blue color response relative to the red color output due to loss of photogenerated carriers near the diode surface because of surface recombination, and because of a small minority carrier lifetime due to the high doping level of the n-region relative to the acceptor doping density of the substrate. The surface recombination and low lifetime cause loss of quantum efficiency at wavelengths less than 4200 A, which is the blue region. An improved photodiode is provided including a silicon p substrate, a junction formed by a phosphorous diffusion of low doping density, and a high dose of arsenic or phosphorous ion implantation to provide a shallow implant to create a built-in electric field which repels the photogenerated minority carriers away from the surface and towards the junction to be collected.

Abstract: A solid-state charge-coupled photoconductor for image scanning including a p-type substrate having a silicon dioxide layer on the surface thereof with the exception of one or more areas in which an n+ diffusion area is located. A polysilicon gate is located over the silicon dioxide layer and a second silicon dioxide layer is located over the polysilicon layer and the n+ diffusion area except for a portion where a first aluminum contact window is provided which extends through the second silicon dioxide layer to the surface of the n+ diffusion area and where a second aluminum contact window extends through the second polysilicon gate to the surface of the polysilicon gate. The photosensitivity of the device is electronically controlled due to the relatively small n+ layer which is reversed biased with respect to the larger gate area.