Abstract: The present invention addresses the problem of providing agglomeraterd boron nitride particles which are suitable to be used as a thermally conductive filler for a heat dissipation sheet of a power semiconductor device, and which exhibit excellent isotropy of thermal conductivity, excellent degradation resistance, and excellent kneadability with respect to resin. The agglomerated boron nitride particles are obtained by agglomerating boron nitride primary particles. The agglomerated BN articles are characterized in that: a peak area intensity ratio ((100)/(004)) of a (100) plane to a (004) plane of the BN primary particles is 0.25 or more, and the average crystallite size of the BN primary particles obtained from a (002) plane peak of the BN primary particles is 375 ? or more.

Abstract: The present invention addresses the problem of providing agglomeraterd boron nitride particles which are suitable to be used as a thermally conductive filler for a heat dissipation sheet of a power semiconductor device, and which exhibit excellent isotropy of thermal conductivity, excellent degradation resistance, and excellent kneadability with respect to resin. The agglomerated boron nitride particles are obtained by agglomerating boron nitride primary particles. The agglomerated BN articles are characterized in that: a peak area intensity ratio ((100)/(004)) of a (100) plane to a (004) plane of the BN primary particles is 0.25 or more, and the average crystallite size of the BN primary particles obtained from a (002) plane peak of the BN primary particles is 375 ? or more.

Abstract: The present invention addresses the problem of providing agglomeraterd boron nitride particles which are suitable to be used as a thermally conductive filler for a heat dissipation sheet of a power semiconductor device, and which exhibit excellent isotropy of thermal conductivity, excellent degradation resistance, and excellent kneadability with respect to resin. The agglomerated boron nitride particles are obtained by agglomerating boron nitride primary particles. The agglomerated BN articles are characterized in that: a peak area intensity ratio ((100)/(004)) of a (100) plane to a (004) plane of the BN primary particles is 0.25 or more, and the average crystallite size of the BN primary particles obtained from a (002) plane peak of the BN primary particles is 375 ? or more.

Abstract: The present invention addresses the problem of providing agglomerated boron nitride particles which are suitable to be used as a thermally conductive filler for a heat dissipation sheet of a power semiconductor device, and which exhibit excellent isotropy of thermal conductivity, excellent degradation resistance, and excellent kneadability with respect to resin. The agglomerated boron nitride particles are obtained by agglomerating boron nitride primary particles. The agglomerated BN articles are characterized in that: a peak area intensity ratio ((100)/(004)) of a (100) plane to a (004) plane of the BN primary particles is 0.25 or more, and the average crystallite size of the BN primary particles obtained from a (002) plane peak of the BN primary particles is 375 ? or more.

Abstract: The present invention addresses the problem of providing agglomerated boron nitride particles which are suitable to be used as a thermally conductive filler for a heat dissipation sheet of a power semiconductor device, and which exhibit excellent isotropy of thermal conductivity, excellent degradation resistance, and excellent kneadability with respect to resin. The agglomerated boron nitride particles are obtained by agglomerating boron nitride primary particles. The agglomerated BN articles are characterized in that: a peak area intensity ratio ((100)/(004)) of a (100) plane to a (004) plane of the BN primary particles is 0.25 or more, and the average crystallite size of the BN primary particles obtained from a (002) plane peak of the BN primary particles is 375 ? or more.