Abstract: A light-emitting device assembly includes a light-emitting device including a light-emitting layer, a first electrode, and a second electrode, and a first connecting portion and a second connecting portion provided on a base, in which the first connecting portion and the second connecting portion are separated from each other by a separation portion, the base is exposed from the separation portion, a wide portion is on a first connecting portion side of the separation portion, the first electrode includes a first portion and a second portion, the second portion of the first electrode is connected to the first connecting portion, the first portion of the first electrode extends from the second portion of the first electrode, and an orthographic projection image of the first portion of the first electrode with respect to the base and the wide portion of the separation portion overlap with each other at least in part.

Abstract: A light-emitting element wafer including a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.

Abstract: A light emitting device includes a light emitting part 21, a black layer 51, and a light diffusion part 41 that is formed on or above the black layer 51. The black layer 51 is provided with an opening part 53 that allows light emitted from the light emitting part to pass through it. Then, light having passed through the opening part 53 passes through the light diffusion part 41.

Abstract: A light-emitting device assembly includes: a light-emitting device 11 including a light-emitting layer, a first electrode 31, and a second electrode 32; and a first connecting portion 41 and a second connecting portion 42 provided on a base 40, in which the first connecting portion 41 and the second connecting portion 42 are separated from each other by a separation portion 43, the base 40 being exposed from the separation portion 43, a wide portion 44 is provided on a first connecting portion side of the separation portion 43, the first electrode 31 includes a first portion 31A and a second portion 31B, the second portion 31B of the first electrode is connected to the first connecting portion 41, the first portion 31A of the first electrode extends from the second portion 31B of the first electrode, and an orthographic projection image of the first portion 31A of the first electrode with respect to the base 40 and the wide portion 44 of the separation portion 43 overlap with each other at least in part.

Abstract: A light-emitting element wafer including a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.

Abstract: A light-emitting element wafer including a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.

Abstract: A light emitting device includes a light emitting part 21, a black layer 51, and a light diffusion part 41 that is formed on or above the black layer 51. The black layer 51 is provided with an opening part 53 that allows light emitted from the light emitting part to pass through it. Then, light having passed through the opening part 53 passes through the light diffusion part 41.

Abstract: A light-emitting element wafer including a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.

Abstract: A light-emitting element wafer includes a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.

Abstract: A light-emitting element includes a light-emitting layer, and an optical function film. The light-emitting layer is configured to include a first plane with a first electrode, a second plane with a second electrode, and a circumferential plane connecting the first and second planes, the second plane being opposing to the first plane, and the light-emitting layer being made of a semiconductor. The optical function film is configured to include a reflection layer being able to reflect light coming from the light-emitting layer, the reflection layer being provided with first and second regions, the first region covering the second plane and the circumferential plane, the second region protruding from the first region to an outside of the light-emitting layer to expose an end plane thereof.

Abstract: A light-emitting element wafer includes a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.

Abstract: A light-emitting element wafer includes a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.

Abstract: A light-emitting element includes a light-emitting layer, and an optical function film. The light-emitting layer is configured to include a first plane with a first electrode, a second plane with a second electrode, and a circumferential plane connecting the first and second planes, the second plane being opposing to the first plane, and the light-emitting layer being made of a semiconductor. The optical function film is configured to include a reflection layer being able to reflect light coming from the light-emitting layer, the reflection layer being provided with first and second regions, the first region covering the second plane and the circumferential plane, the second region protruding from the first region to an outside of the light-emitting layer to expose an end plane thereof.

Abstract: A light-emitting element includes a light-emitting layer, and an optical function film. The light-emitting layer is configured to include a first plane with a first electrode, a second plane with a second electrode, and a circumferential plane connecting the first and second planes, the second plane being opposing to the first plane, and the light-emitting layer being made of a semiconductor. The optical function film is configured to include a reflection layer being able to reflect light coming from the light-emitting layer, the reflection layer being provided with first and second regions, the first region covering the second plane and the circumferential plane, the second region protruding from the first region to an outside of the light-emitting layer to expose an end plane thereof.

Abstract: A light-emitting element includes a light-emitting layer, and an optical function film. The light-emitting layer is configured to include a first plane with a first electrode, a second plane with a second electrode, and a circumferential plane connecting the first and second planes, the second plane being opposing to the first plane, and the light-emitting layer being made of a semiconductor. The optical function film is configured to include a reflection layer being able to reflect light coming from the light-emitting layer, the reflection layer being provided with first and second regions, the first region covering the second plane and the circumferential plane, the second region protruding from the first region to an outside of the light-emitting layer to expose an end plane thereof.

Abstract: A light-emitting element wafer includes a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.