Abstract: A method of calculating the amount of aberration is provided according to an embodiment. In the method of calculating the amount of aberration, a simulation is performed to calculate for each Zernike term the aberration sensitivity of an aberration that is generated on a substrate when a lithography tool performs exposure processing on the substrate by using a mask on which a mask pattern is formed. A substrate pattern corresponding to the mask pattern is formed on the substrate by using the lithography tool. The amount of misalignment of the substrate pattern is then measured. Moreover, the amount of aberration for each Zernike term is calculated on the basis of the aberration sensitivity and the amount of misalignment.

Abstract: In a method of forming a pattern according to an embodiment, a first oblique linear pattern arranged at a first oblique angle with respect to a first parallel linear pattern and a second oblique linear pattern arranged at a second oblique angle with respect to the first parallel linear pattern are formed. Then, a pattern is formed in a region in which the first oblique linear pattern overlaps the second oblique linear pattern. A second parallel linear pattern is formed using the first parallel linear pattern and the pattern such that the second parallel linear pattern is divided by the overlap region. At least one of the first and second oblique angles is an angle other than a right angle.