Patents by Inventor Sayako Nagamine
Sayako Nagamine has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11581049Abstract: Apparatus and methods are described to reduce program disturb for a memory string with a partial select gate drain, which is partially cut by a shallow trench. The memory string with a partial select gate drain is linked with a neighboring full select gate drain that during its programming can cause a program disturb in the memory string with a partial select gate drain. The bias voltage applied to the selected full select gate drain can be controlled from a high state for low memory program states to a lower state for the high memory program states. The high data states may cause program disturb. The reduction in the bias voltage can match a reduction in the bias voltage applied to the bit lines to reduce the program disturb while providing adequate signal to program the high states on the memory string of the full select gate drain.Type: GrantFiled: June 1, 2021Date of Patent: February 14, 2023Assignee: SanDisk Technologies LLCInventors: Kazuki Isozumi, Parth Amin, Sayako Nagamine, Anubhav Khandelwal
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Publication number: 20220383967Abstract: Apparatus and methods are described to reduce program disturb for a memory string with a partial select gate drain, which is partially cut by a shallow trench. The memory string with a partial select gate drain is linked with a neighboring full select gate drain that during its programming can casuse a program disturb in the memory string with a partial select gate drain. The bias voltage applied to the selected full select gate drain can be controlled from a high state for low memory program states to a lower state for the high memory program states. The high data states may cause program disturb. The reduction in the bias voltage can match a reduction in the bias voltage applied to the bit lines to reduce the program disturb while providing adequate signal to program the high states on the memory string of the full select gate drain.Type: ApplicationFiled: June 1, 2021Publication date: December 1, 2022Applicant: SanDisk Technologies LLCInventors: Kazuki Isozumi, Parth Amin, Sayako Nagamine, Anubhav Khandelwal
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Patent number: 11417621Abstract: A memory die includes an alternating stack of insulating layers and electrically conductive layers located between a drain-side dielectric layer and a source-side dielectric layer. Memory openings vertically extend through the alternating stack. Each of the memory openings has a greater lateral dimension an interface with the source-side dielectric layer than at an interface with the drain-side dielectric layer. Memory opening fill structures are located in the memory openings. Each of the memory opening fill structures includes a vertical semiconductor channel, a vertical stack of memory elements, and a drain region. A logic die may be bonded to a source-side dielectric layer side of the memory die.Type: GrantFiled: December 7, 2020Date of Patent: August 16, 2022Assignee: SANDISK TECHNOLOGIES LLCInventors: Naohiro Hosoda, Masanori Tsutsumi, Sayako Nagamine
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Publication number: 20220181283Abstract: A memory die includes an alternating stack of insulating layers and electrically conductive layers located between a drain-side dielectric layer and a source-side dielectric layer. Memory openings vertically extend through the alternating stack. Each of the memory openings has a greater lateral dimension an interface with the source-side dielectric layer than at an interface with the drain-side dielectric layer. Memory opening fill structures are located in the memory openings. Each of the memory opening fill structures includes a vertical semiconductor channel, a vertical stack of memory elements, and a drain region. A logic die may be bonded to a source-side dielectric layer side of the memory die.Type: ApplicationFiled: December 7, 2020Publication date: June 9, 2022Inventors: Naohiro HOSODA, Masanori TSUTSUMI, Sayako NAGAMINE
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Patent number: 11121149Abstract: An alternating stack of insulating layers and word-line-level spacer material layers is formed over a substrate. Memory opening fill structures including a respective memory film, a respective word-line-level semiconductor channel portion, a respective word-line-level dielectric core laterally, and a respective sacrificial dielectric material portion are formed through the alternating stack. Drain-select-level material layers are formed over the alternating stack and the memory opening fill structures. Drain-select-level openings are formed through the drain-select-level material layers and over the memory opening fill structures. The sacrificial dielectric material portions are removed selective to the word-line-level semiconductor channel portions underneath the drain-select-level openings. Drain-select-level semiconductor channel portions are formed directly on a respective one of the word-line-level semiconductor channel portions.Type: GrantFiled: December 6, 2018Date of Patent: September 14, 2021Assignee: SANDISK TECHNOLOGIES LLCInventors: Hiroyuki Tanaka, Sayako Nagamine, Akihisa Sai
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Patent number: 10957680Abstract: Memory dies configured for multi-stacking within a bonded assembly may be provided without using through-substrate vias that extend through semiconductor substrates. A first memory die may be provided by forming interconnect-side bonding pads on a three-dimensional memory device that overlies a semiconductor substrate. A support die including a peripheral circuitry is boned to the interconnect-side bonding pads. The semiconductor substrate is removed, and array-side bonding pads are formed on an opposite side of the interconnect-side bonding pads. Electrically conductive paths that do not pass through any semiconductor material portion are formed between the interconnect-side bonding pads and the array-side bonding pads, thereby avoiding costly formation of through-substrate via structures that extend through any semiconductor substrate. A second memory die may be bonded to the first memory die to provide stacking of multiple memory dies.Type: GrantFiled: January 16, 2019Date of Patent: March 23, 2021Assignee: SANDISK TECHNOLOGIES LLCInventors: Shinsuke Yada, Masanori Tsutsumi, Sayako Nagamine, Yuji Fukano, Akio Nishida, Christopher J. Petti
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Patent number: 10943917Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, and memory pillar structures extending through the alternating stack. Each of the memory pillar structures includes a respective memory film and a respective vertical semiconductor channel. Dielectric cores contact an inner sidewall of a respective one of the vertical semiconductor channels. A drain-select-level isolation structure laterally extends along a first horizontal direction and contacts straight sidewalls of the dielectric cores at a respective two-dimensional flat interface. The memory pillar structures may be formed on-pitch as a two-dimensional periodic array, and themay drain-select-level isolation structure may cut through upper portions of the memory pillar structures to minimize areas occupied by the drain-select-level isolation structure.Type: GrantFiled: April 18, 2019Date of Patent: March 9, 2021Assignee: SANDISK TECHNOLOGIES LLCInventors: Takaaki Iwai, Makoto Koto, Sayako Nagamine, Ching-Huang Lu, Wei Zhao, Yanli Zhang, James Kai
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Publication number: 20200251488Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, and memory pillar structures extending through the alternating stack. Each of the memory pillar structures includes a respective memory film and a respective vertical semiconductor channel Dielectric cores contact an inner sidewall of a respective one of the vertical semiconductor channels. A drain-select-level isolation structure laterally extends along a first horizontal direction and contacts straight sidewalls of the dielectric cores at a respective two-dimensional flat interface. The memory pillar structures may be formed on-pitch as a two-dimensional periodic array, and themay drain-select-level isolation structure may cut through upper portions of the memory pillar structures to minimize areas occupied by the drain-select-level isolation structure.Type: ApplicationFiled: April 18, 2019Publication date: August 6, 2020Inventors: Takaaki IWAI, Makoto KOTO, Sayako NAGAMINE, Ching-Huang LU, Wei ZHAO, Yanli ZHANG, James KAI
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Publication number: 20200227397Abstract: Memory dies configured for multi-stacking within a bonded assembly may be provided without using through-substrate vias that extend through semiconductor substrates. A first memory die may be provided by forming interconnect-side bonding pads on a three-dimensional memory device that overlies a semiconductor substrate. A support die including a peripheral circuitry is boned to the interconnect-side bonding pads. The semiconductor substrate is removed, and array-side bonding pads are formed on an opposite side of the interconnect-side bonding pads. Electrically conductive paths that do not pass through any semiconductor material portion are formed between the interconnect-side bonding pads and the array-side bonding pads, thereby avoiding costly formation of through-substrate via structures that extend through any semiconductor substrate. A second memory die may be bonded to the first memory die to provide stacking of multiple memory dies.Type: ApplicationFiled: January 16, 2019Publication date: July 16, 2020Inventors: Shinsuke YADA, Masanori TSUTSUMI, Sayako NAGAMINE, Yuji FUKANO, Akio NISHIDA, Christopher J. PETTI
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Publication number: 20200051995Abstract: An alternating stack of insulating layers and word-line-level spacer material layers is formed over a substrate. Memory opening fill structures including a respective memory film, a respective word-line-level semiconductor channel portion, a respective word-line-level dielectric core laterally, and a respective sacrificial dielectric material portion are formed through the alternating stack. Drain-select-level material layers are formed over the alternating stack and the memory opening fill structures. Drain-select-level openings are formed through the drain-select-level material layers and over the memory opening fill structures. The sacrificial dielectric material portions are removed selective to the word-line-level semiconductor channel portions underneath the drain-select-level openings. Drain-select-level semiconductor channel portions are formed directly on a respective one of the word-line-level semiconductor channel portions.Type: ApplicationFiled: December 6, 2018Publication date: February 13, 2020Inventors: Hiroyuki TANAKA, Sayako NAGAMINE, Akihisa SAI
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Patent number: 10403639Abstract: An array of memory stack structures extends through an alternating stack of insulating layers and electrically conductive layers over a substrate. An array of drain select level assemblies including cylindrical electrode portions is formed over the alternating stack with the same periodicity as the array of memory stack structures. A drain select level isolation strip including dielectric materials can be formed between a neighboring pair of drain select level assemblies employing the drain select level assemblies as a self-aligning template. Alternatively, cylindrical electrode portions can be formed around an upper portion of each memory stack structure. Strip electrode portions are formed on the cylindrical electrode portions after formation of the drain select level isolation strip.Type: GrantFiled: November 20, 2017Date of Patent: September 3, 2019Assignee: SANDISK TECHNOLOGIES LLCInventors: Takashi Orimoto, James Kai, Sayako Nagamine, Takaaki Iwai, Shigeyuki Sugihara, Shuji Minagawa
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Patent number: 10297610Abstract: An array of memory stack structures extends through an alternating stack of insulating layers and electrically conductive layers over a substrate. An array of drain select level assemblies including cylindrical electrode portions is formed over the alternating stack with the same periodicity as the array of memory stack structures. A drain select level isolation strip including dielectric materials can be formed between a neighboring pair of drain select level assemblies employing the drain select level assemblies as a self-aligning template. Alternatively, cylindrical electrode portions can be formed around an upper portion of each memory stack structure. Strip electrode portions are formed on the cylindrical electrode portions after formation of the drain select level isolation strip.Type: GrantFiled: November 20, 2017Date of Patent: May 21, 2019Assignee: SANDISK TECHNOLOGIES LLCInventors: James Kai, Johann Alsmeier, Shinsuke Yada, Akihisa Sai, Sayako Nagamine, Takashi Orimoto, Tong Zhang
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Patent number: 10236300Abstract: A three-dimensional memory structure includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, an array of memory stack structures extending through the alternating stack, an array of drain select level assemblies overlying the alternating stack and having a same periodicity as the array of memory stack structures, drain select gate electrodes laterally surrounding respective rows of the drain select level assemblies, and a drain select level isolation strip located between a neighboring pair of drain select gate electrodes and including a pair of lengthwise sidewalls. Each of the pair of lengthwise sidewalls includes a laterally alternating sequence of planar sidewall portions and convex sidewall portions.Type: GrantFiled: October 16, 2017Date of Patent: March 19, 2019Assignee: SANDISK TECHNOLOGIES LLCInventors: Yanli Zhang, Masanori Tsutsumi, Shinsuke Yada, Sayako Nagamine, Johann Alsmeier
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Publication number: 20190035803Abstract: A three-dimensional memory structure includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, an array of memory stack structures extending through the alternating stack, an array of drain select level assemblies overlying the alternating stack and having a same periodicity as the array of memory stack structures, drain select gate electrodes laterally surrounding respective rows of the drain select level assemblies, and a drain select level isolation strip located between a neighboring pair of drain select gate electrodes and including a pair of lengthwise sidewalls. Each of the pair of lengthwise sidewalls includes a laterally alternating sequence of planar sidewall portions and convex sidewall portions.Type: ApplicationFiled: October 16, 2017Publication date: January 31, 2019Inventors: Yanli ZHANG, Masanori TSUTSUMI, Shinsuke YADA, Sayako NAGAMINE, Johann ALSMEIER
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Publication number: 20190027488Abstract: An array of memory stack structures extends through an alternating stack of insulating layers and electrically conductive layers over a substrate. An array of drain select level assemblies including cylindrical electrode portions is formed over the alternating stack with the same periodicity as the array of memory stack structures. A drain select level isolation strip including dielectric materials can be formed between a neighboring pair of drain select level assemblies employing the drain select level assemblies as a self-aligning template. Alternatively, cylindrical electrode portions can be formed around an upper portion of each memory stack structure. Strip electrode portions are formed on the cylindrical electrode portions after formation of the drain select level isolation strip.Type: ApplicationFiled: November 20, 2017Publication date: January 24, 2019Inventors: James KAI, Johann ALSMEIER, Shinsuke YADA, Akihisa SAI, Sayako NAGAMINE, Takashi ORIMOTO, Tong ZHANG
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Publication number: 20160343722Abstract: A non-volatile memory device is provided that includes a gap in one of the layers of the inter-gate dielectric. One embodiment comprises a plurality of active areas, isolation regions between the active areas, a tunnel oxide layer above the active areas, a floating gate layer above the tunnel oxide layer, a control gate layer above the floating gate layer, and an inter-gate dielectric between the control gate layer and the floating gate layer. The inter-gate dielectric, which in one embodiment includes a SiN layer, is positioned above the isolation regions with gaps in the SiN layer over the isolation regions. Processes for manufacturing are also disclosed.Type: ApplicationFiled: May 21, 2015Publication date: November 24, 2016Applicant: SANDISK TECHNOLOGIES INC.Inventors: Takashi Kashimura, Sayako Nagamine
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Patent number: 9281314Abstract: Non-volatile storage devices and methods for fabricating non-volatile storage device are described. Sidewalls of the memory cells and their associated word line may be covered with silicon oxide. Silicon nitride covers the silicon oxide adjacent to the word lines, which may provide protection for the word lines during fabrication. However, silicon nitride can trap charges, which can degrade operation if the trapped charges are near a charge trapping region of a memory cell. Thus, the silicon nitride does not cover the silicon oxide adjacent to charge storage regions of the memory cells, which can improve device operation. For example, memory cell current may be increased. Techniques for forming such a device are also disclosed. One aspect includes a method that uses a sacrificial material to control formation of a silicon nitride layer when forming a memory device.Type: GrantFiled: October 10, 2014Date of Patent: March 8, 2016Assignee: SanDisk Technologies Inc.Inventors: Takashi Kashimura, Xiaolong Hu, Sayako Nagamine, Yusuke Yoshida, Hiroaki Iuchi, Akira Nakada, Kazutaka Yoshizawa
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Patent number: RE49165Abstract: A three-dimensional memory structure includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, an array of memory stack structures extending through the alternating stack, an array of drain select level assemblies overlying the alternating stack and having a same periodicity as the array of memory stack structures, drain select gate electrodes laterally surrounding respective rows of the drain select level assemblies, and a drain select level isolation strip located between a neighboring pair of drain select gate electrodes and including a pair of lengthwise sidewalls. Each of the pair of lengthwise sidewalls includes a laterally alternating sequence of planar sidewall portions and convex concave sidewall portions.Type: GrantFiled: June 19, 2020Date of Patent: August 9, 2022Assignee: SANDISK TECHNOLOGIES LLCInventors: Yanli Zhang, Masanori Tsutsumi, Shinsuke Yada, Sayako Nagamine, Johann Alsmeier