Abstract: A method of controlling a semiconductor element that includes a semiconductor laser diode (LD), a semiconductor modulator, and a semiconductor optical amplifier (SOA) is disclosed. The LD generates CW light supplied with the first bias current. The semiconductor modulator generates a modulated light by modulating the CW light supplied with a driving signal. The SOA generates an optical signal by amplifying the modulated light supplied with the second bias current. The method first sets the second bias current in a region where the output power of the optical signal shows negative dependence of the second bias current. Then, a temperature of the semiconductor element, the first bias current, and the driving signal are adjusted such that the optical signal shows performance in respective preset ranges.

Abstract: A method of controlling a semiconductor element that includes a semiconductor laser diode (LD), a semiconductor modulator, and a semiconductor optical amplifier (SOA) is disclosed. The LD generates CW light supplied with the first bias current. The semiconductor modulator generates a modulated light by modulating the CW light supplied with a driving signal. The SOA generates an optical signal by amplifying the modulated light supplied with the second bias current. The method first sets the second bias current in a region where the output power of the optical signal shows negative dependence of the second bias current. Then, a temperature of the semiconductor element, the first bias current, and the driving signal are adjusted such that the optical signal shows performance in respective preset ranges.