Abstract: A display control method of controlling display contents on multiple display devices each capable of displaying a screen concerning an image formation apparatus includes the steps of obtaining an apparatus status of the image formation apparatus, and determining the display contents to be displayed on the display device employed by a user different from a user who inputs an instruction to transition to the obtained apparatus status, the display contents being determined in accordance with the obtained apparatus status.

Abstract: A display control method of controlling display contents on multiple display devices each capable of displaying a screen concerning an image formation apparatus includes the steps of obtaining an apparatus status of the image formation apparatus, and determining the display contents to be displayed on the display device employed by a user different from a user who inputs an instruction to transition to the obtained apparatus status, the display contents being determined in accordance with the obtained apparatus status.

Abstract: An information acquiring apparatus that acquires information of a sample includes an irradiation unit configured to irradiate an irradiation position of the sample with a terahertz wave through a transmission member being in contact with the sample; a detection unit configured to detect a terahertz wave reflected by the transmission member and a terahertz wave reflected by the sample; a waveform acquiring unit configured to acquire a time waveform of the terahertz wave reflected by the transmission member and a time waveform of the terahertz wave reflected by the sample, by using detection results of the detection unit; and an information acquiring unit configured to acquire the information of the sample by using the time waveform of the terahertz wave reflected by the transmission member, the time waveform of the terahertz wave reflected by the sample, and information relating to a thickness of the transmission member at the irradiation position.

Abstract: A plate-like member includes a sample contact portion that includes first and second surfaces opposite to each other, and a separation portion that includes the first surface and a third surface that is opposite to the first surface. The first surface may receive a terahertz wave, and the second surface may come into contact with a sample during a measurement. The separation portion is configured such that: (i) an acquired time waveform may include only a time waveform of a terahertz wave reflected by the first surface or (ii) a time difference between a first time at which a terahertz wave reflected by the first surface is detected and a second time at which a terahertz wave reflected by the third surface is detected is greater than a time difference between the first time and a time at which a terahertz wave reflected by the second surface is detected.

Abstract: A measurement apparatus configured to discriminate a substance constituting a specimen through use of a terahertz wave, which includes: a radiation unit configured to radiate a terahertz wave to the specimen; a detection unit configured to detect the terahertz wave transmitted through or reflected by the specimen; a spectrum acquisition unit configured to acquire a measurement spectrum through use of a detection result of the detection unit; a structure acquisition unit configured to acquire information relating to a size of a structure of the specimen; and a discrimination unit configured to discriminate a substance constituting the specimen through use of the measurement spectrum and a plurality of spectra, the discrimination unit being configured to set, based on the information, a frequency range of the measurement spectrum to be used for the discrimination of the substance of the specimen.

Abstract: An information obtaining apparatus that obtains information regarding a subject includes a radiation unit configured to focus a terahertz wave having a plurality of different frequencies or a plurality of different beam diameters and radiate the terahertz wave onto the subject, a detection unit configured to detect the terahertz wave that has penetrated the subject or that has been reflected by the subject, a spectrum obtaining unit configured to obtain a spectrum of optical characteristics of the subject using a result of the detection performed by the detection unit, and a determination unit configured to determine a state of the subject on the basis of the spectrum obtained by the spectrum obtaining unit. The determination unit determines the state of the subject on the basis of a difference between a plurality of spectra obtained by the spectrum obtaining unit at a plurality of different positions in the subject.

Abstract: An information acquiring apparatus that acquires information of a sample includes an irradiation unit configured to irradiate an irradiation position of the sample with a terahertz wave through a transmission member being in contact with the sample; a detection unit configured to detect a terahertz wave reflected by the transmission member and a terahertz wave reflected by the sample; a waveform acquiring unit configured to acquire a time waveform of the terahertz wave reflected by the transmission member and a time waveform of the terahertz wave reflected by the sample, by using detection results of the detection unit; and an information acquiring unit configured to acquire the information of the sample by using the time waveform of the terahertz wave reflected by the transmission member, the time waveform of the terahertz wave reflected by the sample, and information relating to a thickness of the transmission member at the irradiation position.

Abstract: A subject information acquiring apparatus including: a generation section that generates terahertz waves to be irradiated at a test object in a plurality of kinds of states including a state in which a target material that takes a specific portion of the test object as a target has been introduced into the test object; a detection section that detects terahertz waves that are propagated from the test object and outputs a signal; a processing section that acquires information of the test object using the signals detected by the detecting section and information relating to a characteristic portion of a wavelength spectrum of the target material.

Abstract: A nitride semiconductor substrate having a main surface serving as a semipolar plane and provided with a chamfered portion capable of effectively preventing cracking and chipping, a semiconductor device fabricated using the nitride semiconductor substrate, and a method for manufacturing the nitride semiconductor substrate and the semiconductor device are provided. The nitride semiconductor substrate includes a main surface inclined at an angle of 71° or more and 79° or less with respect to the (0001) plane toward the [1-100] direction or inclined at an angle of 71° or more and 79° or less with respect to the (000-1) plane toward the [?1100] direction; and a chamfered portion located at an edge of an outer periphery of the main surface. The chamfered portion is inclined at an angle ?1 or ?2 of 5° or more and 45° or less with respect to adjacent one of the main surface and a backside surface on a side opposite to the main surface.

Abstract: A nitride semiconductor device includes a main surface and an indicator portion. The main surface is a plane inclined by at least 71° and at most 79° in a [1-100] direction from a (0001) plane or a plane inclined by at least 71° and at most 79° in a [?1100] direction from a (000-1) plane. The indicator portion indicates a (?1017) plane, a (10-1-7) plane, or a plane inclined by at least ?4° and at most 4° in the [1-100] direction from these planes and inclined by at least ?0.5° and at most 0.5° in a direction orthogonal to the [1-100] direction.

Abstract: A nitride semiconductor substrate having a main surface serving as a semipolar plane and provided with a chamfered portion capable of effectively preventing cracking and chipping, a semiconductor device fabricated using the nitride semiconductor substrate, and a method for manufacturing the nitride semiconductor substrate and the semiconductor device are provided. The nitride semiconductor substrate includes a main surface inclined at an angle of 71° or more and 79° or less with respect to the (0001) plane toward the [1-100] direction or inclined at an angle of 71° or more and 79° or less with respect to the (000-1) plane toward the [?1100] direction; and a chamfered portion located at an edge of an outer periphery of the main surface. The chamfered portion is inclined at an angle ?1 or ?2 of 5° or more and 45° or less with respect to adjacent one of the main surface and a backside surface on a side opposite to the main surface.

Abstract: A nitride semiconductor device includes a main surface and an indicator portion. The main surface is a plane inclined by at least 71° and at most 79° in a [1-100] direction from a (0001) plane or a plane inclined by at least 71° and at most 79° in a [?1100] direction from a (000-1) plane. The indicator portion indicates a (?1017) plane, a (10-1-7) plane, or a plane inclined by at least ?4° and at most 4° in the [1-100] direction from these planes and inclined by at least ?0.5° and at most 0.5° in a direction orthogonal to the [1-100] direction.

Abstract: A nitride semiconductor substrate having a main surface serving as a semipolar plane and provided with a chamfered portion capable of effectively preventing cracking and chipping, a semiconductor device fabricated using the nitride semiconductor substrate, and a method for manufacturing the nitride semiconductor substrate and the semiconductor device are provided. The nitride semiconductor substrate includes a main surface inclined at an angle of 71° or more and 79° or less with respect to the (0001) plane toward the [1-100] direction or inclined at an angle of 71° or more and 79° or less with respect to the (000-1) plane toward the [?1100] direction; and a chamfered portion located at an edge of an outer periphery of the main surface. The chamfered portion is inclined at an angle ?1 or ?2 of 5° or more and 45° or less with respect to adjacent one of the main surface and a backside surface on a side opposite to the main surface.