Patents by Inventor Schoen-nan Chen

Schoen-nan Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4266338
    Abstract: Photoelectrochemical cell structures and methods of fabrication are disclosed which provide for easily manufactured efficient energy conversion devices. The structures incorporate one or more chambers for the electrolyte, and utilize semiconductor photoelectrodes. In the plural chamber structure, the semiconductor may be opaque, and need not necessarily be a thin film. Specific dopants for the semiconductor provide for decreased dark current and increased open circuit voltage. Post deposition treatment is disclosed for the semiconductor to provide an increased shorting current. Increased sputtering wattage is provided to increase the short circuit current available from the cell. An electrolyte composition is described having improved performance at high light intensity.
    Type: Grant
    Filed: March 14, 1979
    Date of Patent: May 12, 1981
    Assignees: Grumman Aerospace, Refac Electronics
    Inventors: Schoen-nan Chen, Michael A. Russak, Horst Witzke, Joseph Reichman, Satyendra K. Deb
  • Patent number: 4172925
    Abstract: Photoelectrochemical cell structures and methods of fabricaton are disclosed which provide for easily manufactured efficient energy conversion devices. The structures incorporate one or more chambers for the electrolyte, and utilize semiconductor photoelectrodes. In the plural chamber structure, the semiconductor may be opaque, and need not necessarily be a thin film. Specific dopants for the semiconductor provide for decreased dark current and increased open circuit voltage. Post deposition treatment is disclosed for the semiconductor to provide an increased shorting current. Increased sputtering wattage is provided to increase the short circuit current available from the cell. An electrolyte composition is described having improved performance at high light intensity.In a multi-chamber embodiment, the electrode placement causes the photoactive site to be at an end of the chamber removed from the irradiation window, thereby permitting the use of non-transparent photoelectrodes.
    Type: Grant
    Filed: February 22, 1978
    Date of Patent: October 30, 1979
    Assignees: Refac Electronics Corporation, Grumman Aerospace Corporation
    Inventors: Schoen-nan Chen, Michael A. Russak, Horst Witzke, Joseph Reichman, Satyendra K. Deb
  • Patent number: 4138532
    Abstract: A photogalvanic cell having a light transparent electrode and a spaced counterelectrode separated by an electrolyte. The electrolyte includes an n-methylphenazine dye system which not only contributes to the conversion of light to electrical energy but also is capable of storing electrical charge after light is removed.
    Type: Grant
    Filed: November 11, 1976
    Date of Patent: February 6, 1979
    Assignees: Optel Corporation, Grumman Aerospace Corporation
    Inventor: Schoen-nan Chen
  • Patent number: 4137524
    Abstract: The present invention includes a multi-electrode structure including a counterelectrode, a display electrode in registry with the counterelectrode and finally an intermediately positioned apertured background electrode. Display material is contained between the counterelectrode and the background electrode. Depending upon the electric field conditions existing between the various electrodes, a display image may be created with a first dark-light contrast relationship relative to a background. An appropriate driving circuit is capable of changing the field relationship between the electrodes so that a reverse contrast relationship appears between a displayed image and its background.
    Type: Grant
    Filed: September 28, 1977
    Date of Patent: January 30, 1979
    Assignee: Optel Corporation
    Inventors: Schoen-nan Chen, Kenneth J. Harrison
  • Patent number: 4118546
    Abstract: A photogalvanic cell includes a glass substrate with a transparent electrode which receives irradiating light energy. A second electrode is positioned in spaced relationship from the first electrode and has a thin film of charge storing tungsten oxide deposited thereon. Spaced from both the transparent electrode and the tungsten oxide thin film is a counterelectrode. An electrolyte having TiO.sub.2 powder mixed therein forms a photoactive site at the surface of the transparent electrode. By physically separating the tungsten oxide thin film from the transparent electrode, more light irradiates the TiO.sub.2 thereby increasing the photoconversion of the cell.
    Type: Grant
    Filed: January 27, 1977
    Date of Patent: October 3, 1978
    Assignees: Optel Corporation, Grumman Aerospace Corporation
    Inventors: Horst Witzke, Schoen-nan Chen, Satyendra K. Deb, Michael A. Russak
  • Patent number: 4118547
    Abstract: A sealed device includes an electrode having a semiconductor thin film coating. A liquid electrolyte contacts the thin film to form a photoactive interface which converts light energy to electrical energy. A counterelectrode is positioned in spaced relation to the electrode and also contacts the electrolyte. Leads are connected to the electrode and counterelectrode so that a load may be driven by the device when the device is exposed to light.
    Type: Grant
    Filed: January 27, 1977
    Date of Patent: October 3, 1978
    Assignees: Optel Corporation, Grumman Aerospace Corporation
    Inventors: Horst Witzke, Schoen-nan Chen, Satyendra K. Deb, Steven Robert Jost, Joseph Reichman, Michael A. Russak
  • Patent number: 4117210
    Abstract: A photogalvanic cell includes a conducting SnO.sub.2 electrode upon which is deposited a semi-transparent film of Ti. A metal oxide thin film, such as TiO.sub.2 is in turn deposited upon the semi-transparent Ti thin film. An aqueous (acid or base) electrolyte contacts the metal oxide thin film to form a photoactive site for converting light to electrical energy. The semi-transparent film reduces the internal resistance of the cell by assisting charge transfer between the metal oxide film and the electrode. Also, use of a semi-transparent film permits bi-directional irradiation of the cell to increase photoconversion efficiency.
    Type: Grant
    Filed: January 27, 1977
    Date of Patent: September 26, 1978
    Assignees: Optel Corporation, Grumman Aerospace Corporation
    Inventors: Satyendra K. Deb, Schoen-nan Chen, Horst Witzke, Michael A. Russak, Joseph Reichman
  • Patent number: 4080488
    Abstract: A photogalvanic cell has a glass substrate through which irradiating light passes. A light transparent conductive thin film serves as an electrode, the film being deposited upon the glass substrate. Another layer is an electrolyte and includes an aqueous medium having TiO.sub.2 suspended therein, the TiO.sub.2 forming photoactive sites with the remaining ingredients of the electrolyte. The electrolyte layer further includes N-methylphenazine methosulfate dye which has photoconversion and electrical storage properties. During irradiation the cell may drive a load, or stored energy resulting from irradiation may drive a load after the source of irradiation is removed.
    Type: Grant
    Filed: November 11, 1976
    Date of Patent: March 21, 1978
    Assignees: Optel Corporation, Grumman Aerospace Corporation
    Inventors: Schoen-Nan Chen, Satyendra K. Deb, Horst Witzke
  • Patent number: 4076904
    Abstract: A multilayer device has a coated photoelectrochemical electrode and a counterelectrode. The device is packaged without an electrolyte. However, when the device is immersed in sea water, the water acts as an electrolyte by contributing ions which makes photogalvanic action possible. The device may be fabricated in the form of flexible sheets which are easily transported and deployed for use in sea water. The device will generate electricity for a utilization device after it is immersed in sea water and exposed to light.
    Type: Grant
    Filed: November 11, 1976
    Date of Patent: February 28, 1978
    Assignees: Optel Corporation, Grumman Aerospace Corporation
    Inventor: Schoen-nan Chen