Patents by Inventor Schrems Martin

Schrems Martin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Trench capacitor and method for fabricating the same
    Patent number: 6781180
    Abstract: A trench capacitor for use in a semiconductor memory cell is formed in a substrate and includes a trench having an upper region and a lower region. An insulation collar is formed in the upper region of the trench. The lower region of the trench extends through a buried well. A dielectric layer, which is formed from tungsten oxide, serves as a capacitor dielectric. A conductive trench filling, which is filled into the trench, is formed from silicon or a tungsten-containing material such as tungsten, tungsten silicide or tungsten nitride.
    Type: Grant
    Filed: October 2, 2000
    Date of Patent: August 24, 2004
    Assignee: Infineon Technologies AG
    Inventors: Schrems Martin, Dirk Drescher, Helmut Wurzer, Wolfram Karcher