Patents by Inventor Schyi-Yi Wu

Schyi-Yi Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a shallow and high conductivity boron doped layer in silicon
    Patent number: 4456489
    Abstract: Implanting, with low energy (e.g. 75 Kev and below), a dose of boron difluoride (BF.sub.2) into an area on a silicon substrate which is post-damaged or pre-damaged by a silicon implant so that annealing, or activation, can be accomplished at temperatures in the range of 550.degree. C. to 900.degree. C.
    Type: Grant
    Filed: October 15, 1982
    Date of Patent: June 26, 1984
    Assignee: Motorola, Inc.
    Inventor: Schyi-Yi Wu