Abstract: Microelectronic devices, assemblies, and systems include a multichip composite device having one or more chiplets bonded to a base die and an inorganic dielectric material adjacent the chiplets and over the base die. The multichip composite device is coupled to a structural member that is made of or includes a heat conducting material, or has integrated fluidic cooling channels to conduct heat from the chiplets and the base die.

Abstract: A thermal management scheme, for a multichip module, that is aware of various dies in a stack (horizontal and/or vertical) and heat generated from them, local hot spots in a victim die, and hot spots in aggressor die(s). Each victim die receives telemetry information from thermal sensors located in aggressor dies as well as local thermal sensors in the victim die. The telemetry information is used to enable a virtual sensing scheme where temperature for a target die (e.g., a victim die) and/or its intellectual property (IP) domain is estimated or calculated. The estimated or calculated temperature is then used for performance management of the victim and/or aggressor dies in the stack.

Abstract: An integrated circuit (IC) packaging arrangement for surface mounting of the IC includes a package body that encapsulates one or more IC dies. The package body according to some embodiments has rectangular aspect ratio with a length dimension and a width dimension of different size. The IC packaging according to some embodiments includes leadless surface-mount electrical contacts. According to some embodiments, the leadless surface-mount contacts are situated in clusters at opposite ends of the length dimension of the IC body.

Abstract: An integrated circuit (IC) packaging arrangement for surface mounting of the IC includes a package body that encapsulates one or more IC dies. The package body according to some embodiments has rectangular aspect ratio with a length dimension and a width dimension of different size. The IC packaging according to some embodiments includes leadless surface-mount electrical contacts. According to some embodiments, the leadless surface-mount contacts are situated in clusters at opposite ends of the length dimension of the IC body.

Abstract: The present invention discloses a method including providing a substrate; forming a lower conductor over the substrate; forming a conducting nanostructure over the lower conductor; forming a thin dielectric over the conducting nanostructure; and forming an upper conductor over the thin dielectric. The present invention further discloses a device including a substrate; a lower conductor located over the substrate; a conducting nanostructure located over the lower conductor; a thin dielectric located over the conducting nanostructure; and an upper conductor located over the thin dielectric.

Abstract: The present invention discloses a method including providing a substrate; forming a lower conductor over the substrate; forming a conducting nanostructure over the lower conductor; forming a thin dielectric over the conducting nanostructure; and forming an upper conductor over the thin dielectric. The present invention further discloses a device including a substrate; a lower conductor located over the substrate; a conducting nanostructure located over the lower conductor; a thin dielectric located over the conducting nanostructure; and an upper conductor located over the thin dielectric.

Abstract: Apparatus for an on-chip decoupling capacitor. The capacitor includes a bottom electrode that consist of nanostructures deposited over a planarized metal, a dielectric material deposited over the nanostructures, and a top electrode deposited over the dielectric material. The shape of the bottom electrode is tunable by modulating the diameter and/or the length of the nanostructures to produce an increase in capacitance without increasing the footprint of the on-chip decoupling capacitor.

Abstract: A method of vertically stacking wafers is provided to form three-dimensional (3D) wafer stack. Such method comprising: selectively depositing a plurality of metallic lines on opposing surfaces of adjacent wafers; bonding the adjacent wafers, via the metallic lines, to establish electrical connections between active devices on vertically stacked wafers; and forming one or more vias to establish electrical connections between the active devices on the vertically stacked wafers and an external interconnect. Metal bonding areas on opposing surfaces of the adjacent wafers can be increased by using one or more dummy vias, tapered vias, or incorporating an existing copper (Cu) dual damascene process.

Abstract: A method of vertically stacking wafers is provided to form three-dimensional (3D) wafer stack. Such method comprising: selectively depositing a plurality of metallic lines on opposing surfaces of adjacent wafers; bonding the adjacent wafers, via the metallic lines, to establish electrical connections between active devices on vertically stacked wafers; and forming one or more vias to establish electrical connections between the active devices on the vertically stacked wafers and an external interconnect. Metal bonding areas on opposing surfaces of the adjacent wafers can be increased by using one or more dummy vias, tapered vias, or incorporating an existing copper (Cu) dual damascene process.

Abstract: The present invention discloses a method including providing a substrate; forming a lower conductor over the substrate; forming a conducting nanostructure over the lower conductor; forming a thin dielectric over the conducting nanostructure; and forming an upper conductor over the thin dielectric. The present invention further discloses a device including a substrate; a lower conductor located over the substrate; a conducting nanostructure located over the lower conductor; a thin dielectric located over the conducting nanostructure; and an upper conductor located over the thin dielectric.

Abstract: A three-dimensional (3-D) integrated chip system is provided with a first wafer including one or more integrated circuit (IC) devices, metallic lines deposited via an interlevel dielectric (ILD) on a surface, and at least one barrier line deposited on an outer edge of the surface; and a second wafer including one or more integrated circuit (IC) devices, metallic lines deposited via an interlevel dielectric (ILD) on a surface, and at least one barrier line deposited on an outer edge of the surface, wherein the metallic lines and the barrier line deposited on the surface of the second wafer are bonded with the metallic lines and the barrier line deposited on the surface of the first wafer to establish electrical connections between active IC devices on adjacent wafers and to form a barrier structure on the outer edge of the adjacent wafers.

Abstract: A three-dimensional (3-D) integrated chip system is provided with a first wafer including one or more integrated circuit (IC) devices; a second wafer including one or more integrated circuit (IC) devices; and a metal bonding layer deposited on opposing surfaces of the first and second wafers at designated locations to establish electrical connections between active IC devices on the first and second wafers and to provide metal bonding between the adjacent first and second wafers, when the first wafer is pressed against the second wafer using a flexible bladder press to account for height differences of the metal bonding layer across the opposing surfaces of the first and second wafers.

Abstract: A three-dimensional (3-D) integrated chip system is provided with a first wafer including one or more integrated circuit (IC) devices; a second wafer including one or more integrated circuit (IC) devices; and a metal bonding layer deposited on opposing surfaces of the first and second wafers at designated locations to establish electrical connections between active IC devices on the first and second wafers and to provide metal bonding between the adjacent first and second wafers, when the first wafer is pressed against the second wafer using a flexible bladder press to account for height differences of the metal bonding layer across the opposing surfaces of the first and second wafers.

Abstract: The present invention discloses a method including providing a substrate; forming a lower conductor over the substrate; forming a conducting nanostructure over the lower conductor; forming a thin dielectric over the conducting nanostructure; and forming an upper conductor over the thin dielectric. The present invention further discloses a device including a substrate; a lower conductor located over the substrate; a conducting nanostructure located over the lower conductor; a thin dielectric located over the conducting nanostructure; and an upper conductor located over the thin dielectric.

Abstract: The present invention discloses a method including providing a substrate; forming a lower conductor over the substrate; forming a conducting nanostructure over the lower conductor; forming a thin dielectric over the conducting nanostructure; and forming an upper conductor over the thin dielectric. The present invention further discloses a device including a substrate; a lower conductor located over the substrate; a conducting nanostructure located over the lower conductor; a thin dielectric located over the conducting nanostructure; and an upper conductor located over the thin dielectric.

Abstract: The present invention discloses a method including providing a substrate; forming a lower conductor over the substrate; forming a conducting nanostructure over the lower conductor; forming a thin dielectric over the conducting nanostructure; and forming an upper conductor over the thin dielectric. The present invention further discloses a device including a substrate; a lower conductor located over the substrate; a conducting nanostructure located over the lower conductor; a thin dielectric located over the conducting nanostructure; and an upper conductor located over the thin dielectric.

Abstract: Apparatus for an on-chip decoupling capacitor. The capacitor includes a bottom electrode that consist of nanostructures deposited over a planarized metal, a dielectric material deposited over the nanostructures, and a top electrode deposited over the dielectric material. The shape of the bottom electrode is tunable by modulating the diameter and/or the length of the nanostructures to produce an increase in capacitance without increasing the footprint of the on-chip decoupling capacitor.

Abstract: A three-dimensional (3-D) integrated chip system is provided with a first wafer including one or more integrated circuit (IC) devices; a second wafer including one or more integrated circuit (IC) devices; and metallic lines deposited on opposing surfaces of the first and second wafers at designated locations with an interlevel dielectric (ILD) recess surrounding the metallic lines to facilitate direct metal bonding between the first and second wafers and establish electrical connections between active IC devices on the first and second wafers.

Abstract: A method of vertically stacking wafers is provided to form three-dimensional (3D) wafer stack. Such method comprising: selectively depositing a plurality of metallic lines on opposing surfaces of adjacent wafers; bonding the adjacent wafers, via the metallic lines, to establish electrical connections between active devices on vertically stacked wafers; and forming one or more vias to establish electrical connections between the active devices on the vertically stacked wafers and an external interconnect. Metal bonding areas on opposing surfaces of the adjacent wafers can be increased by using one or more dummy vias, tapered vias, or incorporating an existing copper (Cu) dual damascene process.

Abstract: A three-dimensional (3-D) integrated chip system is provided with a first wafer including one or more integrated circuit (IC) devices; a second wafer including one or more integrated circuit (IC) devices; and a metal bonding layer deposited on opposing surfaces of the first and second wafers at designated locations to establish electrical connections between active IC devices on the first and second wafers and to provide metal bonding between the adjacent first and second wafers, when the first wafer is pressed against the second wafer using a flexible bladder press to account for height differences of the metal bonding layer across the opposing surfaces of the first and second wafers.