Patents by Inventor Scott A. Boddicker

Scott A. Boddicker has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DUAL DEPTH TRENCH TERMINATION METHOD FOR IMPROVING CU-BASED INTERCONNECT INTEGRITY
    Publication number: 20090121358
    Abstract: A trench is formed in a low K dielectric (100) over a plurality of vias (120) also formed in the low K dielectric layer (100). The vias are separated by a distance of less than XV and the edge of the trench is greater than XTO from the edge ? of the via closest to the edge of the trench. The trench and vias are subsequently filled with copper (150, 160) to form the interconnect line.
    Type: Application
    Filed: May 12, 2008
    Publication date: May 14, 2009
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Rajesh Tiwari, Russell Fields, Scott A. Boddicker, Andrew Tae Kim
  • Dual depth trench termination method for improving Cu-based interconnect integrity
    Patent number: 7387960
    Abstract: A trench is formed in a low K dielectric (100) over a plurality of vias (120) also formed in the low K dielectric layer (100). The vias are separated by a distance of less than XV and the edge of the trench is greater than XTO from the edge ? of the via closest to the edge of the trench. The trench and vias are subsequently filled with copper (150), (160) to form the interconnect line.
    Type: Grant
    Filed: September 16, 2003
    Date of Patent: June 17, 2008
    Assignee: Texas Instruments Incorporated
    Inventors: Rajesh Tiwari, Russell Fields, Scott A. Boddicker, Andrew Tae Kim