Patents by Inventor Scott A. Chalmers

Scott A. Chalmers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6172756
    Abstract: Methods and apparatus for film measurement and endpoint detection in a noisy environment, such as CMP processing of semiconductor wafers, are disclosed, characterized by the use of spectral analysis of intensity data derived from light reflected off the sample to estimate film thickness or detect an endpoint condition.
    Type: Grant
    Filed: December 11, 1998
    Date of Patent: January 9, 2001
    Assignee: Filmetrics, Inc.
    Inventors: Scott A. Chalmers, Randall S. Geels
  • Patent number: 5397739
    Abstract: We report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, we can now routinely grow lasing VCSELs with Fabry-Perot cavity resonance wavelengths controlled to within 0.5%.
    Type: Grant
    Filed: July 26, 1993
    Date of Patent: March 14, 1995
    Assignee: Sandia Corporation
    Inventors: Scott A. Chalmers, Kevin P. Killeen, Kevin L. Lear
  • Patent number: 5379719
    Abstract: A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.
    Type: Grant
    Filed: July 26, 1993
    Date of Patent: January 10, 1995
    Assignee: Sandia National Laboratories
    Inventors: Scott A. Chalmers, Kevin P. Killeen, Kevin L. Lear
  • Patent number: 5166100
    Abstract: An ultragrating is a nanometer-period optical grating that is fabricated from a horizontal superlattice. A superlattice is a material structure grown on a substrate by molecular-beam epitaxy or metal-organic chemical vapor deposition and having periodic compositional variations. A horizontal superlattice is one in which the compositional variations are in a direction parallel to the substrate surface. By the selective removal of one of the superlattice materials, an ultragrating is obtained. The smallest grating periods possible before this discovery were those made by electron-beam lithographic techniques which are limited to values greater than 100 nanometers. Thus, the ultragrating with grating periods ranging from one to a hundred nanometers represents an order of magnitude advancement in the state of the art of making optical gratings. The ultragrating will fine utility in the design of advanced electronic devices and for general scientific and engineering purposes.
    Type: Grant
    Filed: December 6, 1990
    Date of Patent: November 24, 1992
    Inventors: Arthur C. Gossard, Paul K. Hansma, Scott A. Chalmers, Albrecht L. Weisenhorn