Patents by Inventor Scott A. Chambers

Scott A. Chambers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150284851
    Abstract: Systems and methods as well as components and techniques can exhibit stable and accurate control of a deposition process by monitoring background-corrected deposition rates of an atomic species via atomic absorption (AA) spectroscopy. The systems and methods have high sensitivity and resolution in addition to extremely effective background correction and baseline drift removal, achieved in part by basing the background correction and baseline drift removal on analysis of resonant and non-resonant AA lines. The systems and methods can result in surprisingly short warm-up times and can drastically reduce the noise coming from the instruments and the surrounding environment.
    Type: Application
    Filed: April 7, 2014
    Publication date: October 8, 2015
    Applicant: BATTELLE MEMORIAL INSTITUTE
    Inventors: Yingge Du, Scott A. Chambers, Timothy C. Droubay, Andrey V. Liyu
  • Patent number: 7094675
    Abstract: A method for producing quantum dots. The method includes cleaning an oxide substrate and separately cleaning a metal source. The substrate is then heated and exposed to the source in an oxygen environment. This causes metal oxide quantum dots to form on the surface of the substrate.
    Type: Grant
    Filed: January 10, 2003
    Date of Patent: August 22, 2006
    Assignee: Battelle Memorial Institute
    Inventors: Yong Liang, John L. Daschbach, Yali Su, Scott A. Chambers
  • Patent number: 7001459
    Abstract: A method of making a spinel-structured metal oxide on a substrate by molecular beam epitaxy, comprising the step of supplying activated oxygen, a first metal atom flux, and at least one other metal atom flux to the surface of the substrate, wherein the metal atom fluxes are individually controlled at the substrate so as to grow the spinel-structured metal oxide on the substrate and the metal oxide is substantially in a thermodynamically stable state during the growth of the metal oxide. A particular embodiment of the present invention encompasses a method of making a spinel-structured binary ferrite, including Co ferrite, without the need of a post-growth anneal to obtain the desired equilibrium state.
    Type: Grant
    Filed: August 29, 2003
    Date of Patent: February 21, 2006
    Assignee: Battelle Memorial Institute
    Inventor: Scott A. Chambers
  • Patent number: 6790476
    Abstract: A method of controlling the wetting characteristics and increasing the adhesion between a metal and an oxide layer. By introducing a negatively-charged species to the surface of an oxide layer, layer-by-layer growth of metal deposited onto the oxide surface is promoted, increasing the adhesion strength of the metal-oxide interface. The negatively-charged species can either be deposited onto the oxide surface or a compound can be deposited that dissociates on, or reacts with, the surface to form the negatively-charged species. The deposited metal adatoms can thereby bond laterally to the negatively-charged species as well as vertically to the oxide surface as well as react with the negatively charged species, be oxidized, and incorporated on or into the surface of the oxide.
    Type: Grant
    Filed: May 21, 2002
    Date of Patent: September 14, 2004
    Assignee: Sandia Corporation
    Inventors: Dwight R. Jennison, Alexander Bogicevic, Jeffry A. Kelber, Scott A. Chambers
  • Publication number: 20040123797
    Abstract: A method of making a spinel-structured metal oxide on a substrate by molecular beam epitaxy, comprising the step of supplying activated oxygen, a first metal atom flux, and at least one other metal atom flux to the surface of the substrate, wherein the metal atom fluxes are individually controlled at the substrate so as to grow the spinel-structured metal oxide on the substrate and the metal oxide is substantially in a thermodynamically stable state during the growth of the metal oxide. A particular embodiment of the present invention encompasses a method of making a spinel-structured binary ferrite, including Co ferrite, without the need of a post-growth anneal to obtain the desired equilibrium state.
    Type: Application
    Filed: August 29, 2003
    Publication date: July 1, 2004
    Inventor: Scott A. Chambers
  • Publication number: 20030146431
    Abstract: A method for producing quantum dots. The method includes cleaning an oxide substrate and separately cleaning a metal source. The substrate is then heated and exposed to the source in an oxygen environment. This causes metal oxide quantum dots to form on the surface of the substrate.
    Type: Application
    Filed: January 10, 2003
    Publication date: August 7, 2003
    Inventors: Yong Liang, John L. Daschbach, Yali Su, Scott A. Chambers
  • Patent number: 6534782
    Abstract: A method for producing quantum dots. The method includes cleaning an oxide substrate and separately cleaning a metal source. The substrate is then heated and exposed to the source in an oxygen environment. This causes metal oxide quantum dots to form on the surface of the substrate.
    Type: Grant
    Filed: November 22, 2000
    Date of Patent: March 18, 2003
    Assignee: Battelle Memorial Institute
    Inventors: Yong Liang, John L. Daschbach, Yali Su, Scott A. Chambers
  • Publication number: 20020152953
    Abstract: A method of making a spinel-structured metal oxide on a substrate by molecular beam epitaxy, comprising the step of supplying activated oxygen, a first metal atom flux, and at least one other metal atom flux to the surface of the substrate, wherein the metal atom fluxes are individually controlled at the substrate so as to grow the spinel-structured metal oxide on the substrate and the metal oxide is substantially in a thermodynamically stable state during the growth of the metal oxide. A particular embodiment of the present invention encompasses a method of making a spinel-structured binary ferrite, including Co ferrite, without the need of a post-growth anneal to obtain the desired equilibrium state.
    Type: Application
    Filed: April 23, 2001
    Publication date: October 24, 2002
    Inventor: Scott A. Chambers