Abstract: The present invention relates to a composition comprising an aqueous dispersion of a binder and a salt of the following fluoroalkyl phosphate: where n, p, q, R1, and R2 are defined herein. The composition of the present invention is useful as a block additive in paint formulations.

Abstract: The present invention relates to a composition comprising an aqueous dispersion of a binder and a salt of the following fluoroalkyl phosphate: where n, p, q, R1, and R2 are defined herein. The composition of the present invention is useful as a block additive in paint formulations.

Abstract: A method for chemical mechanical polishing of a semiconductor wafer containing a nonferrous metal is provided, comprising: providing a chemical mechanical polishing composition comprising 1 to 25 wt % of an oxidizer; 0.01 to 15 wt % of an inhibitor for the nonferrous metal; 0.005 to 5 wt % of a copolymer of poly(ethylene glycol) methyl ether(meth)acrylate and 1-vinylimidazole; and water; wherein the chemical mechanical polishing composition has an acidic pH; providing a chemical mechanical polishing pad; providing a semiconductor wafer containing the nonferrous metal; creating dynamic contact between the chemical mechanical polishing pad and the semiconductor wafer; and, dispensing the polishing solution at or near the interface between the chemical mechanical polishing pad and the semiconductor wafer.

Abstract: A chemical mechanical polishing composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a nonferrous metal. The chemical mechanical polishing composition comprises an inhibitor for the nonferrous metal; a copolymer of poly(ethylene glycol)methyl ether (meth)acrylate and 1-vinylimidazole; and water.

Abstract: Photoresist compositions and methods suitable for depositing a thick photoresist layer in a single coating application are provided. Such photoresist layers are particularly suitable for use in chip scale packaging, for example, in the formation of metal bumps.

Abstract: Photoresist compositions and methods suitable for depositing a thick photoresist layer in a single coating application are provided. Such photoresist layers are particularly suitable for use in chip scale packaging, for example, in the formation of metal bumps.

Abstract: Photoresist compositions and methods suitable for depositing a thick photoresist layer in a single coating application are provided. Such photoresist layers are particularly suitable for use in chip scale packaging, for example, in the formation of metal bumps.

Abstract: The aqueous abrasive-free composition is useful for chemical mechanical polishing of a patterned semiconductor wafer containing a nonferrous metal. The composition includes an oxidizer, an inhibitor for the nonferrous metal, 0 to 15 weight percent water soluble modified cellulose, 0 to 15 weight percent phosphorus compound, 0.005 to 5 weight percent of an acidic polymer, and water. The acidic polymer has a methacrylic acid portion having a carbon number of 4 to 250. The methacrylic acid portion includes either methacrylic acid or an acrylic acid/methacrylic acid copolymer. The acidic polymer including a segment from a mercapto-carboxylic acid chain transfer agent.

Abstract: Photoresist compositions and methods suitable for depositing a thick photoresist layer in a single coating application are provided. Such photoresist layers are particularly suitable for use in chip scale packaging, for example, in the formation of metal bumps.

Abstract: Methods of enhancing the adhesion between a metal surface and an organic polymeric material, such as a dielectric material, in the manufacture of printed circuit boards are provided. Such methods use an adhesion promoting composition including polymeric particles disposed between the metal surface and the organic polymeric material. Also provided are printed circuit boards having enhanced adhesion between a metal surface and an organic polymeric material.

Abstract: Porous polyimide dielectric materials having low dielectric constants useful in electronic component manufacture are disclosed along with methods of preparing the porous polyimide dielectric materials. Also disclosed are methods of forming integrated circuits containing such porous polyimide dielectric material.