Patents by Inventor Scott A. McHugo

Scott A. McHugo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Self-aligned process using indium gallium arsenide etching to form reentry feature in heterojunction bipolar transistors
    Publication number: 20040224463
    Abstract: A method for forming a heterojunction bipolar transistor (HBT) includes forming an etch mask atop an emitter cap layer of the HBT to expose a portion of the emitter cap layer, and selectively etching the exposed portion of the emitter cap layer to (1) form a reentry feature and (2) to expose a portion of the emitter layer. The method further includes selectively etching the exposed portion of the emitter layer to expose a portion of the base layer, and forming a metal layer over the exposed portion of the base layer and the exposed portion of the emitter cap layer.
    Type: Application
    Filed: April 16, 2004
    Publication date: November 11, 2004
    Inventors: Scott A. McHugo, Gregory N. DeBrabander
  • SELF-ALIGNED PROCESS USING INDIUM GALLIUM ARSENIDE ETCHING TO FORM REENTRY FEATURE IN HETEROJUNCTION BIPOLAR TRANSISTORS
    Publication number: 20040224460
    Abstract: A method for forming a heterojunction bipolar transistor (HBT) includes forming an etch mask atop an emitter cap layer of the HBT to expose a portion of the emitter cap layer, and selectively etching the exposed portion of the emitter cap layer to (1) form a reentry feature and (2) to expose a portion of the emitter layer. The method further includes selectively etching the exposed portion of the emitter layer to expose a portion of the base layer, and forming a metal layer over the exposed portion of the base layer and the exposed portion of the emitter cap layer.
    Type: Application
    Filed: May 9, 2003
    Publication date: November 11, 2004
    Inventors: Scott A. McHugo, Gregory N. DeBrabander
  • Self-aligned process using indium gallium arsenide etching to form reentry feature in heterojunction bipolar transistors
    Patent number: 6806129
    Abstract: A method for forming a heterojunction bipolar transistor (HBT) includes forming an etch mask a top layer of the HBT to expose a portion of the emitter cap layer, and selectively etching the exposed portion of the emitter cap layer to (1) form a reentry feature and (2) to expose a portion of the emitter layer. The method further includes selectively etching the exposed portion of the emitter layer to expose a portion of the base layer, and forming a metal layer over the exposed portion of the base layer and the exposed portion of the emitter cap layer.
    Type: Grant
    Filed: May 9, 2003
    Date of Patent: October 19, 2004
    Assignee: Agilent Technologies, Inc.
    Inventors: Scott A. McHugo, Gregory N. DeBrabander