Abstract: A method of monitoring copper contamination. The method includes method, comprising: (a) ion-implanting an N-type dopant into a region of single-crystal silicon substrate, the region abutting a top surface of the substrate; (c) activating the N-type dopant by annealing the substrate at a temperature of 500° C. or higher in an inert atmosphere; (c) submerging, for a present duration of time, the substrate into an aqueous solution, the aqueous solution to be monitored for copper contamination; and (d) determining an amount of copper adsorbed from the aqueous solution by the region of the substrate.

Abstract: A computer system. The computer system including a processor and memory unit coupled to the processor, the memory unit containing instructions that when executed by the processor implement a method for monitoring a solution in a tank used to fabricate integrated circuits, the method comprising the computer implemented steps of: (a) collecting data indicating of an amount of copper in a region of a substrate of a monitor, the monitor comprising an N-type region in a silicon substrate, the region abutting a top surface of the substrate, the monitor having been submerged in the solution for a preset time; (b) comparing the data to a specification for copper content of the solution; (c) if the data indicates a copper content exceeds a limit of the specification for copper, indicating a corrective action is required to prevent copper contamination of the integrated circuits; and (d) repeating steps (a) through (c) periodically.

Abstract: A method of monitoring copper contamination. The method includes method, comprising: (a) ion-implanting an N-type dopant into a region of single-crystal silicon substrate, the region abutting a top surface of the substrate; (c) activating the N-type dopant by annealing the substrate at a temperature of 500° C. or higher in an inert atmosphere; (c) submerging, for a present duration of time, the substrate into an aqueous solution, the aqueous solution to be monitored for copper contamination; and (d) determining an amount of copper adsorbed from the aqueous solution by the region of the substrate.

Abstract: A method of monitoring copper contamination. The method includes method, comprising: (a) ion-implanting an N-type dopant into a region of single-crystal silicon substrate, the region abutting a top surface of the substrate; (c) activating the N-type dopant by annealing the substrate at a temperature of 500° C. or higher in an inert atmosphere; (c) submerging, for a present duration of time, the substrate into an aqueous solution, the aqueous solution to be monitored for copper contamination; and (d) determining an amount of copper adsorbed from the aqueous solution by the region of the substrate.

Abstract: A method of monitoring copper contamination. The method includes method, comprising: (a) ion-implanting an N-type dopant into a region of single-crystal silicon substrate, the region abutting a top surface of the substrate; (c) activating the N-type dopant by annealing the substrate at a temperature of 500° C. or higher in an inert atmosphere; (c) submerging, for a present duration of time, the substrate into an aqueous solution, the aqueous solution to be monitored for copper contamination; and (d) determining an amount of copper adsorbed from the aqueous solution by the region of the substrate.

Abstract: A computer system. The computer system including a processor and memory unit coupled to the processor, the memory unit containing instructions that when executed by the processor implement a method for monitoring a solution in a tank used to fabricate integrated circuits, the method comprising the computer implemented steps of: (a) collecting data indicating of an amount of copper in a region of a substrate of a monitor, the monitor comprising an N-type region in a silicon substrate, the region abutting a top surface of the substrate, the monitor having been submerged in the solution for a preset time; (b) comparing the data to a specification for copper content of the solution; (c) if the data indicates a copper content exceeds a limit of the specification for copper, indicating a corrective action is required to prevent copper contamination of the integrated circuits; and (d) repeating steps (a) through (c) periodically.

Abstract: Slurry compositions comprising an oxidizing agent, optionally a copper corrosion inhibitor, abrasive particles; surface active agent, a service of chloride and a source of sulfate ions.

Abstract: Slurry compositions comprising an oxidizing agent, optionally a copper corrosion inhibitor, abrasive particles; surface active agent, a service of chloride and a source of sulfate ions.