Patents by Inventor Scott B. Herner

Scott B. Herner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040018731
    Abstract: A method of making a silicon-based electronic device is provided. The method includes, for example, the steps of forming a doped silicon layer on a surface of a substrate material and forming an undoped silicon capping layer on the doped silicon layer. The thin “capping” layers of undoped silicon prevent outgassing of the dopants underneath the cap. In this manner, the next deposition of doped silicon is not subject to autodoping by the previous doped silicon deposition.
    Type: Application
    Filed: July 21, 2003
    Publication date: January 29, 2004
    Applicant: MATRIX SEMICONDUCTOR, Inc.
    Inventors: Scott B. Herner, James M. Cleeves, Johan Knall
  • Patent number: 6635556
    Abstract: A method of making a silicon-based electronic device is provided. The method includes, for example, the steps of forming a doped silicon layer on a surface of a substrate material and forming an undoped silicon capping layer on the doped silicon layer. The thin “capping” layers of undoped silicon prevent outgassing of the dopants underneath the cap. In this manner, the next deposition of doped silicon is not subject to autodoping by the previous doped silicon deposition.
    Type: Grant
    Filed: May 17, 2001
    Date of Patent: October 21, 2003
    Assignee: Matrix Semiconductor, Inc.
    Inventors: Scott B. Herner, James M. Cleeves, Johan Knall