Abstract: An ion beam implanter includes ion beam forming and directing apparatus and an implantation station where workpieces are implanted with ions from an ion beam. The beam travels along an evacuated path from an ion source to the implantation station. A flexible bellows couples the implantation station to the beam forming and directing apparatus permitting the implantation station to be pivoted with respect to the beam forming and directing apparatus and thereby change an implantation orientation of the workpieces with respect to the ion beam. A replaceable, flexible bellows liner is disposed within an interior region of the bellows to reduce the volume of implantation byproducts deposited on an interior surface of the bellows.

Abstract: A filament (18) for an ion implanter ion source or plasma shower is provided comprising first and second legs (20a, 20b) and a thermally emissive central portion (40) having ends connected, respectively, to the first and second legs. Preferably, the legs (20a, 20b) are constructed from tantalum (Ta), and the thermally emissive portion (40) is constructed of tungsten (W). The thermally emissive portion is coiled substantially along the entire length thereof and formed in the shape of a generally closed loop, such as a toroid. The toroid is comprised of two toroid halves (40a, 40b) coiled in opposite directions. The toroid halves are constructed of a plurality of filament strands (42, 44, 46) twisted together along substantially the entire length thereof. The coils of the toroid are capable of establishing closed loop magnetic field lines (B) therein when electrical current flows through the thermally emissive portion.