Patents by Inventor Scott Battle
Scott Battle has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10895010Abstract: Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.Type: GrantFiled: October 25, 2016Date of Patent: January 19, 2021Assignee: ENTEGRIS, INC.Inventors: John M. Cleary, Jose I. Arno, Bryan C. Hendrix, Donn Naito, Scott Battle, John N. Gregg, Michael J. Wodjenski, Chongying Xu
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Publication number: 20170037511Abstract: Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.Type: ApplicationFiled: October 25, 2016Publication date: February 9, 2017Inventors: John M. Cleary, Jose I. Arno, Bryan C. Hendrix, Donn Naito, Scott Battle, John N. Gregg, Michael J. Wodjenski, Chongying Xu
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Publication number: 20140329025Abstract: Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.Type: ApplicationFiled: July 19, 2014Publication date: November 6, 2014Inventors: John M. Cleary, Jose I. Arno, Bryan C. Hendrix, Donn Naito, Scott Battle, John N. Gregg, Michael J. Wodjenski, Chongying Xu
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Patent number: 8821640Abstract: Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.Type: GrantFiled: August 31, 2007Date of Patent: September 2, 2014Assignee: Advanced Technology Materials, Inc.Inventors: John M. Cleary, Jose I. Arno, Bryan C. Hendrix, Donn Naito, Scott Battle, John N. Gregg, Michael J. Wodjenski, Chongying Xu
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Patent number: 8053375Abstract: An ultra low k dielectric film, including a silicon film containing porosity deriving from a porogen, as formed from a precursor silane and a porogen, wherein the precursor silane has a water content below 10 ppm, based on total weight of the precursor silane, and/or the porogen has a water content below 10 ppm, based on total weight of the porogen. In one implementation, the precursor silane is diethoxymethylsilane, and the porogen is bicyclo[2.2.1]-hepta-2,5-diene having a trace water content below 10 ppm, based on total weight of said bicyclo[2.2.1]-hepta-2,5-diene. These super-dry reagents are unexpectedly polymerization-resistant during their delivery and deposition in the formation of ultra low k films, and are advantageously employed to produce ultra low k films of superior character.Type: GrantFiled: October 27, 2007Date of Patent: November 8, 2011Assignee: Advanced Technology Materials, Inc.Inventors: Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Steven M. Bilodeau, Scott Battle, William Hunks, Tianniu Chen
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Publication number: 20100255198Abstract: Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.Type: ApplicationFiled: August 31, 2007Publication date: October 7, 2010Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: John M. Cleary, Jose I. Arno, Bryan C. Hendrix, Donn Naito, Scott Battle, John N. Gregg, Michael J. Wodjenski, Chongying Xu
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Publication number: 20080057218Abstract: Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may comprise an amoule having a removable top. Multiple containers defining multiple material support surfaces may be stacked disposed within a vessel in thermal communication with the vessel. A tube may be disposed within the vessel and coupled to a gas inlet. Filters, flow meters, and level sensors may be further provided. Product gas resuting from contact of introduced gas with vaporized material may be delivered to atomic layer deposition (ALD) or similar process equipment.Type: ApplicationFiled: October 30, 2007Publication date: March 6, 2008Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: John Gregg, Scott Battle, Jeffrey Banton, Donn Naito, Ravi Laxman
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Publication number: 20080041310Abstract: Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable mateiral disposed therein. The vessel may comprise an amoule having a removable top. Multiple containers defining multiple material support surfaces may be stacked disposed within a vessel in thermal communication with the vessel. A tube may be disposed within the vessel and coupled to a gas inlet. Filters, flow meters, and level sensors may be further provided. Product gas resuting from contact of introduced gas with vaporized material may be delivered to atomic layer deposition (ALD) or similar process equipment.Type: ApplicationFiled: August 28, 2007Publication date: February 21, 2008Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: John Gregg, Scott Battle, Jeffrey Banton, Donn Naito, Ravi Laxman
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Publication number: 20060235182Abstract: A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films having dielectric constants of less than 3.0, more preferably 2.8 to 2.0.Type: ApplicationFiled: June 14, 2006Publication date: October 19, 2006Inventors: Chongying Xu, Thomas Baum, Alexander Borovik, Ziyun Wang, James Lin, Scott Battle, Ravi Laxman
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Patent number: 7108771Abstract: A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films having dielectric constants of less than 3.0, more preferably 2.8 to 2.0.Type: GrantFiled: December 13, 2001Date of Patent: September 19, 2006Assignee: Advanced Technology Materials, Inc.Inventors: Chongying Xu, Thomas H. Baum, Alexander S. Borovik, Ziyun Wang, James T. Y. Lin, Scott Battle, Ravi K. Laxman
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Patent number: 6921062Abstract: A vaporizer delivery system for use in semiconductor manufacturing processes including a plurality of vertically stacked containers for holding a vaporizable source material. Each of the vertically stacked containers includes a plurality of vented protuberances extending into the interior of the each stacked container thereby providing channels for passage of a carrier gas between adjacent vertically stacked containers.Type: GrantFiled: July 23, 2002Date of Patent: July 26, 2005Assignee: Advanced Technology Materials, Inc.Inventors: John Gregg, Scott Battle, Jeffrey I. Banton, Donn Naito, Marianne Fuierer
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Publication number: 20050006799Abstract: Structure helps support material in a container with an increased exposed surface area to help promote contact of a gas with vaporized material. For at least one disclosed embodiment, the structure may help support material for vaporization in the same form as when the material is placed at the structure. For at least one disclosed embodiment, the structure may help support material with an increased exposed surface area relative to a maximum exposed surface area the material could have at rest in the container absent the structure. For at least one disclosed embodiment, the structure may define one or more material support surfaces in an interior region of the container in addition to a bottom surface of the interior region of the container. For at least one disclosed embodiment, the structure may define in an interior region of the container one or more material support surfaces having a total surface area greater than a surface area of a bottom surface of the interior region of the container.Type: ApplicationFiled: June 1, 2004Publication date: January 13, 2005Inventors: John Gregg, Scott Battle, Jeffrey Banton, Donn Naito, Ravi Laxman
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Publication number: 20040016404Abstract: A vaporizer delivery system for use in semiconductor manufacturing processes including a plurality of vertically stacked containers for holding a vaporizable source material. Each of the vertically stacked containers includes a plurality of vented protuberances extending into the interior of the each stacked container thereby providing channels for passage of a carrier gas between adjacent vertically stacked containers.Type: ApplicationFiled: July 23, 2002Publication date: January 29, 2004Inventors: John Gregg, Scott Battle, Jeffrey I. Banton, Donn Naito, Marianne Fuierer
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Publication number: 20030116421Abstract: A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films having dielectric constants of less than 3.0, more preferably 2.8 to 2.0.Type: ApplicationFiled: December 13, 2001Publication date: June 26, 2003Inventors: Chongying Xu, Thomas H. Baum, Alexander S. Borovik, Ziyun Wang, James T.Y. Lin, Scott Battle, Ravi K. Laxman