Abstract: A method for forming a multi-layer semiconductor device (1) having a lower silicon layer (4), an intermediate silicon layer (5) within which micro-mirrors (10) are formed and an upper spacer layer (6) of silicon for spacing another component from the micro-mirrors (10). First and second etch stop layers (8, 9) of oxide act as insulation between the respective layers (4, 5, 6). In order to minimise damage to the micro-mirrors (10), the formation of the micro-mirrors (10) is left to the end of the forming process. An assembly of the lower layer (4) and the intermediate layer (5) with the fist etch stop layer (8) is formed, and the second etch stop layer (9) is than grown and patterned on the intermediate layer (5) for subsequent formation of the micro-mirrors (10). The upper layer (5) is then bonded by an annealing process to the is patterned second etch stop layer (9).

Abstract: A method of controlling the curvature of an optical device applies a material that affects the molecular structure of the optical device. To that end, a material having at least one predetermined property is selected, and then applied into the optical device. Application of the material causes stress in the optical device. The curvature of the optical device thus changes after the material is applied. As noted above, the material affects the molecular structure of the optical device.

Abstract: Thin free standing single crystal films can be produced by sputter depositing a layer of stressable metal onto a single crystal substrate, treating the composite so produced to effect stressing of the metal layer which then peels away with a portion of the single crystal substrate attached to the metal layer. The free standing film thus produced has typical thickness in the order of tens of micrometers. The metal layer can subsequently be removed by acid etching or other suitable etching techniques, to leave the free standing single crystal film, having a thickness from about 5 microns to about 50 or more.

Abstract: The subject invention is a method of sputtering a material on a substrate in which the substrate is first locally heated so that the mobility on the surface of the substrate is increased to a value E.sub.s. A material is then sputtered on the substrate with a sputtering energy E.sub.k whereby the sum of E.sub.k and E.sub.s is greater than the activation energy required for a chemical reaction to occur between the sputtered surface of the substrate and the sputtered material. In the preferred embodiment, the substrate is silicon and the material to be sputtered is a refractory metal such as titanium.