Abstract: Included are embodiments for content identification and linking. More specifically, some embodiments include receiving content from a user and providing a first user interface that comprises the content. The first user interface may include an action identity option to identify an action in the content. The first user interface may further include a time identity option to identify a time that the action occurred in the content. Similarly, some embodiments include provide a second user interface that includes a clip option to provide a subset of the content. The second user interface may include a play clip option to play the subset of the content, beginning at the time the action occurred.

Abstract: Techniques for preventing an integrated circuit (IC) from overheating are described herein. According to one embodiment, an exemplary process includes detecting whether a temperature of an integrated circuit (IC) exceeds a threshold independent of an operating state of the IC, and removing at least a portion of a power from the IC if the temperature of the IC exceeds the threshold. Other methods and apparatuses are also described.

Abstract: Techniques for preventing an integrated circuit (IC) from overheating are described herein. According to one embodiment, an exemplary process includes detecting whether a temperature of an integrated circuit (IC) exceeds a threshold independent of an operating state of the IC, and removing at least a portion of a power from the IC if the temperature of the IC exceeds the threshold. Other methods and apparatuses are also described.

Abstract: A unique fabrication method allows the formation of regions of opposite conductivity types in a semiconductor substrate 100 utilizing a single masking step. A first mask is formed on the surface of the semiconductor substrate and patterned to define the regions (110) which are to be doped to a first conductivity type. Subsequent to the doping of these first regions, a protective layer (111) is formed over these first regions. The mask is then removed, thus exposing the regions (112) which are to be doped to the second conductivity type opposite to said first conductivity type. These exposed regions are then doped to said opposite conductivity type, with the first regions which have been doped to said first conductivity type protected by said protective layer.