Abstract: A semiconductor light source includes a substrate, a light emitting element comprising a first semiconductor material on the substrate, and a nonlinear optical element comprising a second semiconductor material, which is different from the first semiconductor material, on the substrate. The light emitting element is configured to generate light of a first frequency, and the nonlinear optical element is configured to receive the light of the first frequency from the light emitting element and generate light of a second frequency. The substrate is native to one of the first semiconductor material or the second semiconductor material. Related devices and fabrication methods are also discussed.

Abstract: A light emitting diode (LED) includes a semiconductor structure comprising at least one epitaxial layer that is configured to generate far-UVC light, and respective electrical contacts on first and second surfaces of the semiconductor structure. One or more dimensions of the at least one epitaxial layer in a lateral direction are within an order of magnitude of a thickness of the at least one epitaxial layer in a vertical direction. A primary light extraction surface may include at least one sidewall of the semiconductor structure that extends between the first and second surfaces and is configured to emit the far-UVC light. Related devices, arrays thereof, and fabrication methods are also discussed.

Abstract: An ultraviolet (UV) light source includes a light emitting element that is configured to generate light of a first frequency, a nonlinear optical element that is configured to receive the light of the first frequency from the light emitting element and generate UVC or far-UVC light of a second frequency from the light of the first frequency, and an output coupling element that is configured to selectively outcouple the UVC or far-UVC light from the nonlinear optical element as output light. Related light sources and fabrication methods are also discussed.

Abstract: A Light Detection and Ranging (LIDAR) apparatus includes a detector having a first pixel and a second pixel configured to output respective detection signals responsive to light incident thereon, and receiver optics configured to collect the light over a field of view and direct first and second portions of the light to the first and second pixels, respectively. The first pixel includes one or more time of flight (ToF) sensors, and the second pixel includes one or more image sensors. At least one of the receiver optics or arrangement of the first and second pixels in the detector is configured to correlate the first and second pixels such that depth information indicated by the respective detection signals output from the first pixel is correlated with image information indicated by the respective detection signals output from the second pixel. Related devices and methods of operation are also discussed.

Abstract: A LIDAR system includes an emitter array configured to illuminate a field of view, a detector array configured to image the field of view, and a control circuit. The emitter array includes one or more emitter elements that are configured to emit respective optical signals responsive to respective emitter control signals. The detector array includes one or more detector elements configured to output respective detection signals responsive to light incident thereon. The control circuit is configured to generate the respective emitter control signals based on the respective detection signals and respective spatial correlations of the one or more emitter elements and the one or more detector elements with respect to the field of view. Related devices and methods of operation are also discussed.

Abstract: A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.

Abstract: A LIDAR system includes an emitter array configured to illuminate a field of view, a detector array configured to image the field of view, and a control circuit. The emitter array includes one or more emitter elements that are configured to emit respective optical signals responsive to respective emitter control signals. The detector array includes one or more detector elements configured to output respective detection signals responsive to light incident thereon. The control circuit is configured to generate the respective emitter control signals based on the respective detection signals and respective spatial correlations of the one or more emitter elements and the one or more detector elements with respect to the field of view. Related devices and methods of operation are also discussed.

Abstract: An optical emitter device includes a plurality of emitters on a first substrate, and one or more alignment patterns on the first substrate and positioned relative to the plurality of emitters. At least one optical element is arranged to receive respective light emissions from the plurality of emitters, and is oriented based on the one or more alignment patterns, such that the at least one optical element and the plurality of emitters are self-aligned. Related devices and fabrication methods are also discussed.

Abstract: An illumination apparatus includes a first semiconductor layer comprising a plurality of emitters that are electrically interconnected in or on the first semiconductor layer, and a second semiconductor layer that is bonded to the first semiconductor layer in a stacked arrangement. The second semiconductor layer comprises a plurality of transistors that are electrically connected to respective emitters or subsets of the plurality of emitters at a bonding interface between the first and second semiconductor layers. Related systems and methods of fabrication are also discussed.

Abstract: A light emitting device includes a semiconductor structure comprising an n-type layer, an active region, and a p-type layer, first and second electrical contacts on the n-type layer and the p-type layer, respectively, and an integrated fuse structure in or on the semiconductor structure. The integrated fuse structure is electrically coupled in series between the first and second electrical contacts, and is actuatable to provide an electrically open state between the first and second electrical contacts responsive to a control signal. Related emitter arrays, methods of fabrication, and methods of operation are also discussed.

Abstract: A Light Detection and Ranging (LIDAR) apparatus includes a detector having a first pixel and a second pixel configured to output respective detection signals responsive to light incident thereon, and receiver optics configured to collect the light over a field of view and direct first and second portions of the light to the first and second pixels, respectively. The first pixel includes one or more time of flight (ToF) sensors, and the second pixel includes one or more image sensors. At least one of the receiver optics or arrangement of the first and second pixels in the detector is configured to correlate the first and second pixels such that depth information indicated by the respective detection signals output from the first pixel is correlated with image information indicated by the respective detection signals output from the second pixel. Related devices and methods of operation are also discussed.

Abstract: A Light Detection and Ranging (LIDAR) apparatus includes a detector having a first pixel and a second pixel configured to output respective detection signals responsive to light incident thereon, and receiver optics configured to collect the light over a field of view and direct first and second portions of the light to the first and second pixels, respectively. The first pixel includes one or more time of flight (ToF) sensors, and the second pixel includes one or more image sensors. At least one of the receiver optics or arrangement of the first and second pixels in the detector is configured to correlate the first and second pixels such that depth information indicated by the respective detection signals output from the first pixel is correlated with image information indicated by the respective detection signals output from the second pixel. Related devices and methods of operation are also discussed.

Abstract: A Light Detection And Ranging (LIDAR) apparatus includes a pulsed light source to emit optical signals, a detector array comprising single-photon detectors to output respective detection signals indicating times of arrival of a plurality of photons incident thereon, and processing circuitry to receive the respective detection signals.

Abstract: A semiconductor device includes a detector structure. The detector structure includes an integrated circuit on a substrate, and a photo detector on an upper surface of the integrated circuit that is opposite the substrate, where the substrate is non-native to the photo detector. A System-on-Chip apparatus includes at least one laser emitter on a non-native substrate, at least one photo detector on the non-native substrate, and an input/output circuit. The at least one photo detector of the second plurality of photo detectors is disposed on an integrated circuit between the at least one photo detector and the non-native substrate to form a detector structure.

Abstract: A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.

Abstract: A semiconductor device includes a detector structure. The detector structure includes an integrated circuit on a substrate, and a photo detector on an upper surface of the integrated circuit that is opposite the substrate, where the substrate is non-native to the photo detector. A System-on-Chip apparatus includes at least one laser emitter on a non-native substrate, at least one photo detector on the non-native substrate, and an input/output circuit. The at least one photo detector of the second plurality of photo detectors is disposed on an integrated circuit between the at least one photo detector and the non-native substrate to form a detector structure.

Abstract: A laser array includes a plurality of laser diodes arranged and electrically connected to one another on a surface of a non-native substrate. Respective laser diodes of the plurality of laser diodes have different orientations relative to one another on the surface of the non-native substrate. The respective laser diodes are configured to provide coherent light emission in different directions, and the laser array is configured to emit an incoherent output beam comprising the coherent light emission from the respective laser diodes. The output beam may include incoherent light having a non-uniform intensity distribution over a field of view of the laser array. Related devices and fabrication methods are also discussed.

Abstract: A laser array includes a plurality of laser emitters arranged in a plurality of rows and a plurality of columns on a substrate that is non-native to the plurality of laser emitters, and a plurality of driver transistors on the substrate adjacent one or more of the laser diodes. A subset of the plurality of laser emitters includes a string of laser emitters that are connected such that an anode of at least one laser emitter of the subset is connected to a cathode of an adjacent laser emitter of the subset. A driver transistor of the plurality of driver transistors is configured to control a current flowing through the string.

Abstract: A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.

Abstract: A laser array includes a plurality of laser diodes arranged and electrically connected to one another on a surface of a non-native substrate. Respective laser diodes of the plurality of laser diodes have different orientations relative to one another on the surface of the non-native substrate. The respective laser diodes are configured to provide coherent light emission in different directions, and the laser array is configured to emit an incoherent output beam comprising the coherent light emission from the respective laser diodes. The output beam may include incoherent light having a non-uniform intensity distribution over a field of view of the laser array. Related devices and fabrication methods are also discussed.