Abstract: An optical emitter device includes a plurality of emitters on a first substrate, and one or more alignment patterns on the first substrate and positioned relative to the plurality of emitters. At least one optical element is arranged to receive respective light emissions from the plurality of emitters, and is oriented based on the one or more alignment patterns, such that the at least one optical element and the plurality of emitters are self-aligned. Related devices and fabrication methods are also discussed.

Abstract: An illumination apparatus includes a first semiconductor layer comprising a plurality of emitters that are electrically interconnected in or on the first semiconductor layer, and a second semiconductor layer that is bonded to the first semiconductor layer in a stacked arrangement. The second semiconductor layer comprises a plurality of transistors that are electrically connected to respective emitters or subsets of the plurality of emitters at a bonding interface between the first and second semiconductor layers. Related systems and methods of fabrication are also discussed.

Abstract: A light emitting device includes a semiconductor structure comprising an n-type layer, an active region, and a p-type layer, first and second electrical contacts on the n-type layer and the p-type layer, respectively, and an integrated fuse structure in or on the semiconductor structure. The integrated fuse structure is electrically coupled in series between the first and second electrical contacts, and is actuatable to provide an electrically open state between the first and second electrical contacts responsive to a control signal. Related emitter arrays, methods of fabrication, and methods of operation are also discussed.

Abstract: A Light Detection and Ranging (LIDAR) apparatus includes a detector having a first pixel and a second pixel configured to output respective detection signals responsive to light incident thereon, and receiver optics configured to collect the light over a field of view and direct first and second portions of the light to the first and second pixels, respectively. The first pixel includes one or more time of flight (ToF) sensors, and the second pixel includes one or more image sensors. At least one of the receiver optics or arrangement of the first and second pixels in the detector is configured to correlate the first and second pixels such that depth information indicated by the respective detection signals output from the first pixel is correlated with image information indicated by the respective detection signals output from the second pixel. Related devices and methods of operation are also discussed.

Abstract: A Light Detection and Ranging (LIDAR) apparatus includes a detector having a first pixel and a second pixel configured to output respective detection signals responsive to light incident thereon, and receiver optics configured to collect the light over a field of view and direct first and second portions of the light to the first and second pixels, respectively. The first pixel includes one or more time of flight (ToF) sensors, and the second pixel includes one or more image sensors. At least one of the receiver optics or arrangement of the first and second pixels in the detector is configured to correlate the first and second pixels such that depth information indicated by the respective detection signals output from the first pixel is correlated with image information indicated by the respective detection signals output from the second pixel. Related devices and methods of operation are also discussed.

Abstract: A Light Detection And Ranging (LIDAR) apparatus includes a pulsed light source to emit optical signals, a detector array comprising single-photon detectors to output respective detection signals indicating times of arrival of a plurality of photons incident thereon, and processing circuitry to receive the respective detection signals.

Abstract: A semiconductor device includes a detector structure. The detector structure includes an integrated circuit on a substrate, and a photo detector on an upper surface of the integrated circuit that is opposite the substrate, where the substrate is non-native to the photo detector. A System-on-Chip apparatus includes at least one laser emitter on a non-native substrate, at least one photo detector on the non-native substrate, and an input/output circuit. The at least one photo detector of the second plurality of photo detectors is disposed on an integrated circuit between the at least one photo detector and the non-native substrate to form a detector structure.

Abstract: A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.

Abstract: A semiconductor device includes a detector structure. The detector structure includes an integrated circuit on a substrate, and a photo detector on an upper surface of the integrated circuit that is opposite the substrate, where the substrate is non-native to the photo detector. A System-on-Chip apparatus includes at least one laser emitter on a non-native substrate, at least one photo detector on the non-native substrate, and an input/output circuit. The at least one photo detector of the second plurality of photo detectors is disposed on an integrated circuit between the at least one photo detector and the non-native substrate to form a detector structure.

Abstract: A laser array includes a plurality of laser diodes arranged and electrically connected to one another on a surface of a non-native substrate. Respective laser diodes of the plurality of laser diodes have different orientations relative to one another on the surface of the non-native substrate. The respective laser diodes are configured to provide coherent light emission in different directions, and the laser array is configured to emit an incoherent output beam comprising the coherent light emission from the respective laser diodes. The output beam may include incoherent light having a non-uniform intensity distribution over a field of view of the laser array. Related devices and fabrication methods are also discussed.

Abstract: A laser array includes a plurality of laser emitters arranged in a plurality of rows and a plurality of columns on a substrate that is non-native to the plurality of laser emitters, and a plurality of driver transistors on the substrate adjacent one or more of the laser diodes. A subset of the plurality of laser emitters includes a string of laser emitters that are connected such that an anode of at least one laser emitter of the subset is connected to a cathode of an adjacent laser emitter of the subset. A driver transistor of the plurality of driver transistors is configured to control a current flowing through the string.

Abstract: A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.

Abstract: A laser array includes a plurality of laser diodes arranged and electrically connected to one another on a surface of a non-native substrate. Respective laser diodes of the plurality of laser diodes have different orientations relative to one another on the surface of the non-native substrate. The respective laser diodes are configured to provide coherent light emission in different directions, and the laser array is configured to emit an incoherent output beam comprising the coherent light emission from the respective laser diodes. The output beam may include incoherent light having a non-uniform intensity distribution over a field of view of the laser array. Related devices and fabrication methods are also discussed.

Abstract: A laser array includes a plurality of laser emitters arranged in a plurality of rows and a plurality of columns on a substrate that is non-native to the plurality of laser emitters, and a plurality of driver transistors on the substrate adjacent one or more of the laser diodes. A subset of the plurality of laser emitters includes a string of laser emitters that are connected such that an anode of at least one laser emitter of the subset is connected to a cathode of an adjacent laser emitter of the subset. A driver transistor of the plurality of driver transistors is configured to control a current flowing through the string.

Abstract: A laser diode includes a semiconductor structure having an n-type layer, an active region, and a p-type layer. One of the n-type and p-type layers includes a lasing aperture thereon having an optical axis oriented perpendicular to a surface of the active region between the n-type and p-type layers. First and second contacts are electrically connected to the n-type and p-type layers, respectively. The first and/or second contacts are smaller than the lasing aperture in at least one dimension. Related arrays and methods of fabrication are also discussed.

Abstract: A laser diode includes a semiconductor structure having an n-type layer, an active region, and a p-type layer. One of the n-type and p-type layers includes a lasing aperture thereon having an optical axis oriented perpendicular to a surface of the active region between the n-type and p-type layers. First and second contacts are electrically connected to the n-type and p-type layers, respectively. The first and/or second contacts are smaller than the lasing aperture in at least one dimension. Related arrays and methods of fabrication are also discussed.

Abstract: A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.

Abstract: A laser array includes a plurality of laser diodes arranged and electrically connected to one another on a surface of a non-native substrate. Respective laser diodes of the plurality of laser diodes have different orientations relative to one another on the surface of the non-native substrate. The respective laser diodes are configured to provide coherent light emission in different directions, and the laser array is configured to emit an incoherent output beam comprising the coherent light emission from the respective laser diodes. The output beam may include incoherent light having a non-uniform intensity distribution over a field of view of the laser array. Related devices and fabrication methods are also discussed.

Abstract: A laser array includes a plurality of laser emitters arranged in a plurality of rows and a plurality of columns on a substrate that is non-native to the plurality of laser emitters, and a plurality of driver transistors on the substrate adjacent one or more of the laser diodes. A subset of the plurality of laser emitters includes a string of laser emitters that are connected such that an anode of at least one laser emitter of the subset is connected to a cathode of an adjacent laser emitter of the subset. A driver transistor of the plurality of driver transistors is configured to control a current flowing through the string.

Abstract: A Light Detection and Ranging (LIDAR) apparatus includes a detector having a first pixel and a second pixel configured to output respective detection signals responsive to light incident thereon, and receiver optics configured to collect the light over a field of view and direct first and second portions of the light to the first and second pixels, respectively. The first pixel includes one or more time of flight (ToF) sensors, and the second pixel includes one or more image sensors. At least one of the receiver optics or arrangement of the first and second pixels in the detector is configured to correlate the first and second pixels such that depth information indicated by the respective detection signals output from the first pixel is correlated with image information indicated by the respective detection signals output from the second pixel. Related devices and methods of operation are also discussed.