Abstract: A fluid transfer system includes a valve tree, the valve tree having a master valve having a flow axis and a header. The fluid transfer system further includes a coupler disposed between, connected to, and in fluid communication with, the valve tree and the header. The coupler has a fixed length and includes a coupler multi-path flow connector in fluid communication with the valve tree. The coupler also includes a flow control valve having a flow axis, the flow control valve directly coupled to the coupler multi-path flow connector and in fluid communication with the header.

Abstract: A method is provided, the method comprising monitoring consumption of a sputter target to determine a deposition rate of a metal layer during metal deposition processing using the sputter target, and modeling a dependence of the deposition rate on at least one of deposition plasma power and deposition time. The method also comprises applying the deposition rate model to modify the metal deposition processing to form the metal layer to have a desired thickness.

Abstract: A method of manufacturing a semiconductor device by qualifying an etch process. A semiconductor substrate is subjected to a predefined etch process to produce a partially-etched film. A scatterometry signature of the partially-etched film is produced. The scatterometry signature is used to determine if a physical property of the partially-etched film matches a target result.

Abstract: A method and apparatus for controlling wafer thickness uniformity in a multi-zone vertical furnace is provided. The multi-zone furnace bakes a plurality of wafers within each zone for a first bake time. A film thickness of at least one wafer baked in each zone of the furnace is measured using a metrology tool. A film thickness optimization unit determines a deposition rate for the at least one wafer within each zone, with the deposition rate being determined as a function of the film thickness of the wafer and the first bake time. The film thickness optimization unit then determines a second bake time to bake a subsequent set of wafers, and the subsequent set of wafers is baked in the furnace for the second bake time.

Abstract: In one illustrative embodiment, a method is provided that controls a stepper to position a focal plane of a light source adjacent a top surface of a layer of photoresist. A metrology tool is used to measure a thickness of the layer of photoresist, and a controller uses the thickness measurement to determine a position of the top surface of the layer of photoresist. The controller delivers a control signal to the stepper, causing the stepper to move the focal plane of the light source adjacent the top surface of the layer of photoresist.

Abstract: A method comprising determining a polishing profile produced by a polishing tool and manufacturing a process layer with a surface profile prior to polishing operations based upon the determined polishing profile of the polishing tool.

Abstract: A system for controlling the thickness of a layer of copper in the formation of a semiconductor device is provided. The system is comprised of an electroplate tool, a metrology tool, and a controller. The electroplate tool is capable of depositing a layer of copper on a surface of a semiconductor device. The electroplate tool has at least one parameter that may be varied to control a thickness of the layer of copper. The metrology tool is capable of measuring the thickness of the copper layer and delivering a signal indicative thereof.

Abstract: In one illustrative embodiment, a system is provided for controlling a lens of an optical system of a stepper. The system comprises the stepper, the optical system, and a controller. The stepper has a light source controllably energizable to provide light to a surface of a semiconductor device. The lens of the optical system has a controllable focus. The controller is capable of determining a temperature of the lens, and controllably varying the focus of the lens in response to the temperature of the lens.

Abstract: A method and apparatus for controlling wafer thickness uniformity in a multi-zone vertical furnace is provided. The multi-zone furnace bakes a plurality of wafers within each zone for a first bake time. A film thickness of at least one wafer baked in each zone of the furnace is measured using a metrology tool. A film thickness optimization unit determines a deposition rate for the at least one wafer within each zone, with the deposition rate being determined as a function of the film thickness of the wafer and the first bake time. The film thickness optimization unit then determines a second bake time to bake a subsequent set of wafers, and the subsequent set of wafers is baked in the furnace for the second bake time.