Patents by Inventor Scott C. Young

Scott C. Young has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240120415
    Abstract: Technologies for a field effect transistor (FET) with a ferroelectric gate dielectric are disclosed. In an illustrative embodiment, a perovskite stack is grown on a buffer layer as part of manufacturing a transistor. The perovskite stack includes one or more doped semiconductor layers alternating with other lattice-matched layers. Growing the doped semiconductor layers on lattice-matched layers can improve the quality of the doped semiconductor layers. The lattice-matched layers can be etched away, leaving the doped semiconductor layers as fins for a ribbon FET. A ferroelectric layer can be conformally grown on the fins, creating a high-quality ferroelectric layer above and below the fins. A gate can then be grown on the ferroelectric layer.
    Type: Application
    Filed: October 1, 2022
    Publication date: April 11, 2024
    Applicant: Intel Corporation
    Inventors: Scott B. Clendenning, Sudarat Lee, Kevin P. O'Brien, Rachel A. Steinhardt, John J. Plombon, Arnab Sen Gupta, Charles C. Mokhtarzadeh, Gauri Auluck, Tristan A. Tronic, Brandon Holybee, Matthew V. Metz, Dmitri Evgenievich Nikonov, Ian Alexander Young
  • Publication number: 20240113220
    Abstract: Technologies for a transistor with a thin-film ferroelectric gate dielectric are disclosed. In the illustrative embodiment, a transistor has a thin layer of scandium aluminum nitride (ScxAl1-xN) ferroelectric gate dielectric. The channel of the transistor may be, e.g., gallium nitride or molybdenum disulfide. In one embodiment, the ferroelectric polarization changes when voltage is applied and removed from a gate electrode, facilitating switching of the transistor at a lower applied voltage. In another embodiment, the ferroelectric polarization of a gate dielectric of a transistor changes when the voltage is past a positive threshold value or a negative threshold value. Such a transistor can be used as a one-transistor memory cell.
    Type: Application
    Filed: September 30, 2022
    Publication date: April 4, 2024
    Applicant: Intel Corporation
    Inventors: Arnab Sen Gupta, Ian Alexander Young, Dmitri Evgenievich Nikonov, Marko Radosavljevic, Matthew V. Metz, John J. Plombon, Raseong Kim, Uygar E. Avci, Kevin P. O'Brien, Scott B. Clendenning, Jason C. Retasket, Shriram Shivaraman, Dominique A. Adams, Carly Rogan, Punyashloka Debashis, Brandon Holybee, Rachel A. Steinhardt, Sudarat Lee
  • Publication number: 20030146620
    Abstract: A swivel drop ear elbow fitting includes a threaded nut, a retaining ring, and a hollow elbow adapter. The threaded nut includes a plurality of integrated attachment ears located along an external periphery of the threaded nut. An outer surface of the first portion of the elbow adapter is shaped to receive the retaining ring, which retains the threaded nut on the first portion of the elbow adapter, while allowing the hollow elbow adapter to rotate with respect to the threaded nut.
    Type: Application
    Filed: February 1, 2002
    Publication date: August 7, 2003
    Inventors: Scott C. Young, Richard R. Allman, Thomas O. Mumaw, Gregory A. Reitsma
  • Patent number: 4535491
    Abstract: Commode splash and noise is reduced or eliminated by the creation of turbulence in the bowl water. Pressurized water streams or other methods of agitating the bowl water such as by stirring are presented which can be retrofitted to existing commodes.
    Type: Grant
    Filed: April 20, 1984
    Date of Patent: August 20, 1985
    Inventor: Scott C. Young