Patents by Inventor Scott Cuthill
Scott Cuthill has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10145008Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as, without limitation, a carbon doped silicon oxide film, a carbon doped silicon nitride, a carbon doped silicon oxynitride film in a deposition process. In one aspect, the composition comprises at least cyclic carbosilane having at least one Si—C—Si linkage and at least one anchoring group selected from a halide atom, an amino group, and combinations thereof.Type: GrantFiled: February 4, 2016Date of Patent: December 4, 2018Assignee: VERSUM MATERIALS US, LLCInventors: Haripin Chandra, Kirk Scott Cuthill, Anupama Mallikarjunan, Xinjian Lei, Matthew R. MacDonald, Manchao Xiao, Madhukar Bhaskara Rao, Jianheng Li
-
Patent number: 9905415Abstract: Methods for forming silicon nitride films are disclosed that comprise the steps of: providing a substrate in a reactor; introducing into the reactor an at least one organoaminosilane having a least one SiH3 group described herein wherein the at least one organoaminosilane reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2.Type: GrantFiled: September 26, 2014Date of Patent: February 27, 2018Assignee: VERSUM MATERIALS US, LLCInventors: Haripin Chandra, Anupama Mallikarjunan, Xinjian Lei, Moo-Sung Kim, Kirk Scott Cuthill, Mark Leonard O'Neill
-
Publication number: 20180023192Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as, without limitation, a carbon doped silicon oxide film, a carbon doped silicon nitride, a carbon doped silicon oxynitride film in a deposition process. In one aspect, the composition comprises at least cyclic carbosilane having at least one Si—C—Si linkage and at least one anchoring group selected from a halide atom, an amino group, and combinations thereof.Type: ApplicationFiled: February 4, 2016Publication date: January 25, 2018Inventors: Haripin Chandra, Kirk Scott Cuthill, Anupama Mallikarjunan, Xinjian Lei, Matthew R. MacDonald, Manchao Xiao, Madhukar Bhaskara Rao, Jianheng Li
-
Publication number: 20150275355Abstract: Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one precursor having the following formula: R1nSi(NR2R3)mH4-m-n wherein R1 is independently selected from a linear C1 to C6 alkyl group, a branched C2 to C6 alkyl group, a C3 to C6 cyclic alkyl group, a C2 to C6 alkenyl group, a C3 to C6 alkynyl group, and a C4 to C10 aryl group; wherein R2 and R3 are each independently selected from hydrogen, a C1 to C6 linear alkyl group, a branched C2 to C6 alkyl group, a C3 to C6 cyclic alkyl group, a C2 to C6 alkenyl group, a C3 to C6 alkynyl group, and a C4 to C10 aryl group, wherein R2 and R3 are linked or, are not linked, to form a cyclic ring structure; n=1, 2, 3; and m=1, 2.Type: ApplicationFiled: March 18, 2015Publication date: October 1, 2015Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Anupama Mallikarjunan, Haripin Chandra, Manchao Xiao, Xinjian Lei, Kirk Scott Cuthill, Mark Leonard O'Neill
-
Publication number: 20150099375Abstract: Described herein are methods for forming silicon nitride films. In one aspect, there is provided a method of forming a silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one organoaminosilane having a least one SiH3 group described herein wherein the at least one organoaminosilane reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2.Type: ApplicationFiled: September 26, 2014Publication date: April 9, 2015Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Chandra Haripin, Anupama Mallikarjunan, Xinjian Lei, Moo-Sung Kim, Kirk Scott Cuthill, Mark Leonard O'Neill
-
Publication number: 20140183706Abstract: Described herein are methods of forming dielectric films comprising silicon, such as, but not limited to, silicon oxide, silicon oxycarbide, silicon carbide, and combinations thereof, that exhibit at least one of the following characteristics: low wet etch resistance, a dielectric constant of 6.0 or below, and/or can withstand a high temperature rapid thermal anneal process. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer.Type: ApplicationFiled: March 11, 2014Publication date: July 3, 2014Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Liu Yang, Manchao Xiao, Kirk Scott Cuthill, Bing Han, Mark Leonard O'Neill
-
Patent number: 8703624Abstract: Described herein are methods of forming dielectric films comprising silicon, such as, but not limited to, silicon oxide, silicon oxycarbide, silicon carbide, and combinations thereof, that exhibit at least one of the following characteristics: low wet etch resistance, a dielectric constant of 6.0 or below, and/or can withstand a high temperature rapid thermal anneal process. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer.Type: GrantFiled: March 4, 2010Date of Patent: April 22, 2014Assignee: Air Products and Chemicals, Inc.Inventors: Liu Yang, Manchao Xiao, Kirk Scott Cuthill, Bing Han, Mark Leonard O'Neill
-
Patent number: 8460753Abstract: Described herein are methods to form silicon dioxide films that have extremely low wet etch rate in HF solution using a thermal CVD process, ALD process or cyclic CVD process in which the silicon precursor is selected from one of: R1nR2mSi(NR3R4)4-n-m; and, a cyclic silazane of (R1R2SiNR3)p, where R1 is an alkenyl or an aromatic, such as vinyl, allyl, and phenyl; R2, R3, and R4 are selected from H, alkyl with C1-C10, linear, branched, or cyclic, an alkenyl with C2-C10 linear, branched, or cyclic, and aromatic; n=1-3, m=0-2; p=3-4.Type: GrantFiled: December 9, 2010Date of Patent: June 11, 2013Assignee: Air Products and Chemicals, Inc.Inventors: Manchao Xiao, Liu Yang, Kirk Scott Cuthill, Heather Regina Bowen, Bing Han, Mark Leonard O'Neill
-
Publication number: 20120148745Abstract: This invention related to method to form silicon dioxide films that have extremely low wet etch rate in HF solution using a thermal CVD process, ALD process or cyclic CVD process in which the silicon precursor is selected from one of: R1nR2mSi(NR3R4)4-n-m; and, a cyclic silazane of (R1R2SiNR3)p, where R1 is an alkenyl or an aromatic, such as vinyl, allyl, and phenyl; R2, R3, and R4 are selected from H, alkyl with C1-C10, linear, branched, or cyclic, an alkenyl with C2-C10 linear, branched, or cyclic, and aromatic; n=1-3, m=0-2; p=3-4.Type: ApplicationFiled: December 9, 2010Publication date: June 14, 2012Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Manchao Xiao, Liu Yang, Kirk Scott Cuthill, Heather Regina Bowen, Bing Han, Mark Leonard O'Neill
-
Publication number: 20100233886Abstract: Described herein are methods of forming dielectric films comprising silicon, such as, but not limited to, silicon oxide, silicon oxycarbide, silicon carbide, and combinations thereof, that exhibit at least one of the following characteristics: low wet etch resistance, a dielectric constant of 6.0 or below, and/or can withstand a high temperature rapid thermal anneal process. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer.Type: ApplicationFiled: March 4, 2010Publication date: September 16, 2010Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Liu Yang, Manchao Xiao, Kirk Scott Cuthill, Bing Han, Mark Leonard O'Neill
-
Patent number: 7582574Abstract: A method for forming a metal silicate as a high k dielectric in an electronic device, comprising the steps of: providing diethylsilane to a reaction zone; concurrently providing a source of oxygen to the reaction zone; concurrently providing a metal precursor to the reaction zone; reacting the diethylsilane, source of oxygen and metal precursor by chemical vapor deposition to form a metal silicate on a substrate comprising the electronic device. The metal is preferably hafnium, zirconium or mixtures thereof. The dielectric constant of the metal silicate film can be tuned based upon the relative atomic concentration of metal, silicon, and oxygen in the film.Type: GrantFiled: May 10, 2007Date of Patent: September 1, 2009Assignee: Air Products and Chemicals, Inc.Inventors: Robert Daniel Clark, Hareesh Thridandam, Kirk Scott Cuthill, Arthur Kenneth Hochberg
-
Publication number: 20070281475Abstract: A method for forming a metal silicate as a high k dielectric in an electronic device, comprising the steps of: providing diethylsilane to a reaction zone; concurrently providing a source of oxygen to the reaction zone; concurrently providing a metal precursor to the reaction zone; reacting the diethylsilane, source of oxygen and metal precursor by chemical vapor deposition to form a metal silicate on a substrate comprising the electronic device. The metal is preferably hafnium, zirconium or mixtures thereof. The dielectric constant of the metal silicate film can be tuned based upon the relative atomic concentration of metal, silicon, and oxygen in the film.Type: ApplicationFiled: May 10, 2007Publication date: December 6, 2007Inventors: Robert Daniel Clark, Hareesh Thridandam, Kirk Scott Cuthill, Arthur Kenneth Hochberg
-
Patent number: 7288145Abstract: A precursor composition is disclosed for use in the chemical vapor deposition of a material selected from the group consisiting of silicon oxynitride, silicon nitride, and silicon oxide. The composition comprises a hydrazinosilane of the formula: [R12N—NH]nSi(R2)4-n where each R1 is independently selected from alkyl groups of C1 to C6; each R2 is independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1-4.Type: GrantFiled: August 30, 2006Date of Patent: October 30, 2007Assignee: Air Products and Chemicals, Inc.Inventors: Manchao Xiao, Arthur Kenneth Hochberg, Kirk Scott Cuthill
-
Patent number: 7122222Abstract: Processes for precursors for silicon dielectric depositions of silicon nitride, silicon oxide and silicon oxynitride on a substrate using a hydrazinosilane of the formula: [R12N—NH]nSi(R2)4?n where each R1 is independently selected from alkyl groups of C1 to C6; each R2 is independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1–4. Some of the hydrazinosilanes are novel precursors.Type: GrantFiled: October 27, 2003Date of Patent: October 17, 2006Assignee: Air Products and Chemicals, Inc.Inventors: Manchao Xiao, Arthur Kenneth Hochberg, Kirk Scott Cuthill
-
Patent number: 7064224Abstract: This invention is related to organometallic precursors and deposition processes for fabricating conformal metal containing films on substrates such as silicon, metal nitrides and other metal layers. The organometallic precursors are N,N?-alkyl-1,1-alkylsilylamino metal complexes represented by the formula: wherein M is a metal selected from Group VIIb, VIII, IX and X, and specific examples include cobalt, iron, nickel, manganese, ruthenium, zinc, copper, palladium, platinum, iridium, rhenium, osmium, and the R1-5 can be same or different selected from hydrogen, alkyl, alkoxy, fluoroalkyl and alkoxy, cycloaliphatic, and aryl.Type: GrantFiled: February 4, 2005Date of Patent: June 20, 2006Assignee: Air Products and Chemicals, Inc.Inventors: Xinjian Lei, Manchao Xiao, Hareesh Thridandam, Kirk Scott Cuthill
-
Publication number: 20060047123Abstract: Mercaptoamide compounds, represented by Formulas (IA), (IB), (IIA), and (IIB): or a pharmaceutically acceptable salt thereof, inhibit histone deacetylase enzyme and are useful for the treatment and/or prevention of various infections, cancerous diseases, and conditions.Type: ApplicationFiled: September 2, 2005Publication date: March 2, 2006Inventors: Saleh Ahmed, Celine Combet, Scott Cuthill, Graham Dawson, William Gattrell, Mario Lobell, Neil Pegg, Imaad Saba, Simon Swain, Claire Thomas, Graham Wynne
-
Publication number: 20050100554Abstract: The invention provides complexes of at least two polypeptides, and methods of using the same. Purified complexes of two polypeptides are provided, including chimeric complexes, and chimeric polypeptides and complexes thereof are also provided, as are nucleic acids encoding chimeric polypeptides and vectors and cells containing the same. Also provided are methods of identifying agents that disrupt polypeptide complexes, methods of identifying complex or polypeptide in a sample, and for removing the same, methods of determining altered expression of a polypeptide in a subject, and methods of treating/preventing disorders involving altered levels of complex or polypeptide.Type: ApplicationFiled: February 14, 2003Publication date: May 12, 2005Inventors: Amanda Jackson, Chean Ooi, David Lewin, Scott Cuthill
-
Publication number: 20040146644Abstract: Processes for precursors for silicon dielectric depositions of silicon nitride, silicon oxide and silicon oxynitride on a substrate using a hydrazinosilane of the formula:Type: ApplicationFiled: October 27, 2003Publication date: July 29, 2004Inventors: Manchao Xiao, Arthur Kenneth Hochberg, Kirk Scott Cuthill
-
Patent number: 6616972Abstract: A method for producing a material selected from the group consisting of metal oxide, metal oxynitride and mixtures thereof on a substrate, comprising; reacting a first reactant selected from the group consisting of (R1R2N)xM(═NR3)y, (R4R5N)xM[&eegr;2—R6N═C (R7)(R8)]y and mixtures thereof with an oxidant and up to 95 volume percent of a source of nitrogen selected from the group consisting of ammonia, N2O, NO, NO2, alkyl amines, N2H2, alkyl hydrazine, N2 and mixtures thereof, to produce said material on said substrate, where R1, R2, R3, R4, R5, R6, R7 and R8 are individually C1-6 alkyl, aryl or hydrogen, M═Ta, Nb, W or Mo or mixtures thereof, and when M═Ta or Nb, x=3 and y=1 and when M═W or Mo, y=x=2.Type: GrantFiled: February 24, 1999Date of Patent: September 9, 2003Assignee: Air Products and Chemicals, Inc.Inventors: Yoshihide Senzaki, Arthur Kenneth Hochberg, Kirk Scott Cuthill