Abstract: A method and apparatus for incorporation of high power device dies into smaller system packages by embedding metal “coins” having high thermal conductivity into package substrates, or printed circuit boards, and coupling the power device dies onto the metal coins is provided. In one embodiment, the power device die can be attached to an already embedded metal coin in the package substrate or PCB. The power device die can be directly coupled to the embedded metal coin or the power device die can be attached to a metallic interposer which is then bonded to the embedded metal coin. In another embodiment, the die can be attached to the metal coin and then the PCB or package substrate can be assembled to incorporate the copper coin. Active dies are coupled to each other either through wire bonds or other passive components, or using a built-up interconnect.

Abstract: A method and apparatus for incorporation of high power device dies into smaller system packages by embedding metal “coins” having high thermal conductivity into package substrates, or printed circuit boards, and coupling the power device dies onto the metal coins is provided. In one embodiment, the power device die can be attached to an already embedded metal coin in the package substrate or PCB. The power device die can be directly coupled to the embedded metal coin or the power device die can be attached to a metallic interposer which is then bonded to the embedded metal coin. In another embodiment, the die can be attached to the metal coin and then the PCB or package substrate can be assembled to incorporate the copper coin. Active dies are coupled to each other either through wire bonds or other passive components, or using a built-up interconnect.

Abstract: Embodiments of semiconductor devices (e.g., RF devices) include a substrate, an isolation structure, an active device, a lead, and a circuit. The isolation structure is coupled to the substrate, and includes an opening. An active device area is defined by a portion of the substrate surface that is exposed through the opening. The active device is coupled to the substrate surface within the active device area. The circuit is electrically coupled between the active device and the lead. The circuit includes one or more elements positioned outside the active device area (e.g., physically coupled to the isolation structure and/or under the lead). The elements positioned outside the active device area may include elements of an envelope termination circuit and/or an impedance matching circuit. Embodiments also include method of manufacturing such semiconductor devices.

Abstract: A method and apparatus for incorporation of high power device dies into smaller system packages by embedding metal “coins” having high thermal conductivity into package substrates, or printed circuit boards, and coupling the power device dies onto the metal coins is provided. In one embodiment, the power device die can be attached to an already embedded metal coin in the package substrate or PCB. The power device die can be directly coupled to the embedded metal coin or the power device die can be attached to a metallic interposer which is then bonded to the embedded metal coin. In another embodiment, the die can be attached to the metal coin and then the PCB or package substrate can be assembled to incorporate the copper coin. Active dies are coupled to each other either through wire bonds or other passive components, or using a built-up interconnect.

Abstract: Embodiments of semiconductor devices (e.g., RF devices) include a substrate, an isolation structure, an active device, a lead, and a circuit. The isolation structure is coupled to the substrate, and includes an opening. An active device area is defined by a portion of the substrate surface that is exposed through the opening. The active device is coupled to the substrate surface within the active device area. The circuit is electrically coupled between the active device and the lead. The circuit includes one or more elements positioned outside the active device area (e.g., physically coupled to the isolation structure and/or under the lead). The elements positioned outside the active device area may include elements of an envelope termination circuit and/or an impedance matching circuit. Embodiments also include method of manufacturing such semiconductor devices.

Abstract: Embodiments of semiconductor devices (e.g., RF devices) include a substrate, an isolation structure, an active device, a lead, and a circuit. The isolation structure is coupled to the substrate, and includes an opening. An active device area is defined by a portion of the substrate surface that is exposed through the opening. The active device is coupled to the substrate surface within the active device area. The circuit is electrically coupled between the active device and the lead. The circuit includes one or more elements positioned outside the active device area (e.g., physically coupled to the isolation structure and/or under the lead). The elements positioned outside the active device area may include elements of an envelope termination circuit and/or an impedance matching circuit. Embodiments also include method of manufacturing such semiconductor devices.

Abstract: A method and apparatus for incorporation of high power device dies into smaller system packages by embedding metal “coins” having high thermal conductivity into package substrates, or printed circuit boards, and coupling the power device dies onto the metal coins is provided. In one embodiment, the power device die can be attached to an already embedded metal coin in the package substrate or PCB. The power device die can be directly coupled to the embedded metal coin or the power device die can be attached to a metallic interposer which is then bonded to the embedded metal coin. In another embodiment, the die can be attached to the metal coin and then the PCB or package substrate can be assembled to incorporate the copper coin. Active dies are coupled to each other either through wire bonds or other passive components, or using a built-up interconnect.

Abstract: Embodiments of semiconductor devices (e.g., RF devices) include a substrate, an isolation structure, an active device, a lead, and a circuit. The isolation structure is coupled to the substrate, and includes an opening. An active device area is defined by a portion of the substrate surface that is exposed through the opening. The active device is coupled to the substrate surface within the active device area. The circuit is electrically coupled between the active device and the lead. The circuit includes one or more elements positioned outside the active device area (e.g., physically coupled to the isolation structure and/or under the lead). The elements positioned outside the active device area may include elements of an envelope termination circuit and/or an impedance matching circuit. Embodiments also include method of manufacturing such semiconductor devices.

Abstract: The disclosures made herein relate to RF power semiconductor devices. In accordance with one embodiment of the disclosures made herein, a RF power plastic semiconductor device comprises a semiconductor (RF) device, a Low Temperature Co-Fired Ceramic (LTCC) impedance matching structure electrically connected to the RF device and a plastic package body formed over the RF device and the impedance matching structure. The LTCC impedance matching structure comprises a metallized layer overlying a major body portion of the impedance matching structure and comprises a passivation layer on the metallized layer. The passivation layer enhances bond strength of a mold compound of the plastic package body to the metallized layer. Portions of the metallized layer are exposed through the passivation layer for enabling electrical interconnects to be formed between the LTCC impedance matching structure and the RF device.

Abstract: The disclosures made herein relate to RF power semiconductor devices. In accordance with one embodiment of the disclosures made herein, a RF power plastic semiconductor device comprises a semiconductor (RF) device, a Low Temperature Co-Fired Ceramic (LTCC) impedance matching structure electrically connected to the RF device and a plastic package body formed over the RF device and the impedance matching structure. The LTCC impedance matching structure comprises a metallized layer overlying a major body portion of the impedance matching structure and comprises a passivation layer on the metallized layer. The passivation layer enhances bond strength of a mold compound of the plastic package body to the metallized layer. Portions of the metallized layer are exposed through the passivation layer for enabling electrical interconnects to be formed between the LTCC impedance matching structure and the RF device.