Abstract: The embodiments herein describe authenticating a photomask used to fabricate an IC or a wafer. Because the IC may have been fabricated at a third-party IC manufacturer, the customer may want to ensure the manufacturer did not mistakenly use an incorrect mask, or that the mask was not altered or replaced with a rogue mask by a nefarious actor. That is, the embodiments herein can be used to identify when an IC manufacture (whether trusted or not) mistakenly used the wrong photomask, or to verify that a third-party IC manufacturer did not tamper with or replace the authentic photomask with a rogue mask. Advantageously, the embodiments herein can create a secure IC fabrication process to catch mistakes as well as ensure that non-trusted third-parties did not introduce defects into the IC.

Abstract: A computer-implemented method of ensuring integrity of an integrated circuit (IC) is provided. The computer-implemented method includes providing a design layer that meets design rule checks (DRCs), identifying a first critical dimension (CD) distribution of the design layer and using retargeting shapes in the design layer to enable a biasing of CDs of targets to enable a provision of two different CD distributions, which are DRC clean and which are separate from one another and which cannot be expressed by a single Gaussian distribution.

Abstract: The embodiments herein describe authenticating a photomask used to fabricate an IC or a wafer. Because the IC may have been fabricated at a third-party IC manufacturer, the customer may want to ensure the manufacturer did not mistakenly use an incorrect mask, or that the mask was not altered or replaced with a rogue mask by a nefarious actor. That is, the embodiments herein can be used to identify when an IC manufacture (whether trusted or not) mistakenly used the wrong photomask, or to verify that a third-party IC manufacturer did not tamper with or replace the authentic photomask with a rogue mask. Advantageously, the embodiments herein can create a secure IC fabrication process to catch mistakes as well as ensure that non-trusted third-parties did not introduce defects into the IC.

Abstract: Photolithography compositions and methods. A first layer of a first photoresist is formed on a substrate. A second layer of a second photoresist is formed directly onto the first layer. The second polymer of the second photoresist includes an absorbing moiety. The second layer is patternwise imaged and developed, resulting in removal of base-soluble regions. A relief pattern from the second layer remains. The relief pattern and the first layer are exposed to a second dose of the radiation. The polymer in the relief pattern absorbs a portion of the second dose. A fraction of the second dose passes through the at least one region of the relief pattern and exposes at least one region of the first layer. The relief pattern and base-soluble regions of the first layer are removed. A relief pattern from the first layer remains. A second photolithography method and a photoresist composition are also included.

Abstract: Photolithography compositions and methods. A first layer of a first photoresist is formed on a substrate. A second layer of a second photoresist is formed directly onto the first layer. The second polymer of the second photoresist includes an absorbing moiety. The second layer is patternwise imaged and developed, resulting in removal of base-soluble regions. A relief pattern from the second layer remains. The relief pattern and the first layer are exposed to a second dose of the radiation. The polymer in the relief pattern absorbs a portion of the second dose. A fraction of the second dose passes through the at least one region of the relief pattern and exposes at least one region of the first layer. The relief pattern and base-soluble regions of the first layer are removed. A relief pattern from the first layer remains. A second photolithography method and a photoresist composition are also included.

Abstract: A lithographic structure and method of fabrication and use thereof having a plurality of layers at least one of which is a an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and wherein X is not present or is selected from the group consisting of one or more of O, N, S, and F and a layer of an energy active material. The RCHX layers are useful as hardmask layers, anti-reflection layers and hardmask anti-reflection layers. The RCHX layer can be vapor-deposited and patterned by patterning the energy active material and transferring the pattern to the RCHX layer.

Abstract: A lithographic structure and method of fabrication and use thereof having a plurality of layers at least one of which is a an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and wherein X is not present or is selected from the group consisting of one or more of O, N, S, and F and a layer of an energy active material. The RCHX layers are useful as hardmask layers, anti-reflection layers and hardmask anti-reflection layers. The RCHX layer can be vapor-deposited and patterned by patterning the energy active material and transferring the pattern to the RCHX layer.

Abstract: A lithographic structure and method of fabrication and use thereof having a plurality of layers at least one of which is a an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and wherein X is not present or is selected from the group consisting of one or more of O, N, S, and F and a layer of an energy active material. The RCHX layers are useful as hardmask layers, anti-reflection layers and hardmask anti-reflection layers. The RCHX layer can be vapor-deposited and patterned by patterning the energy active material and transferring the pattern to the RCHX layer.