Patents by Inventor Scott Dye

Scott Dye has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8709848
    Abstract: MEMS devices (40) using etched cavities (42) are desirably formed using multiple etching steps. Preliminary cavities (20) formed by locally anisotropic etching to nearly the final depth have irregular (46) sidewalls (44) and steep and/or inconsistent sidewall (44) to bottom (54) intersection angles (48). This leads to less than desired cavity diaphragm (26) burst strengths. Final cavities (42) with smooth sidewalls (50), smaller and consistent sidewall (50) to bottom (54) intersection angles (58), and having more than doubled cavity diaphragm (26) burst strengths are obtained by treating the preliminary cavities (20) with TMAH etchant, preferably relatively dilute TMAH etchant. In a preferred embodiment, a cleaning step is performed between the etching step and the TMAH treatment step to remove any anisotropic etching by-products present on the preliminary cavities' (20) initial sidewalls (44).
    Type: Grant
    Filed: April 15, 2011
    Date of Patent: April 29, 2014
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Srivatsa G. Kundalgurki, Scott Dye
  • Publication number: 20120264249
    Abstract: MEMS devices (40) using etched cavities (42) are desirably formed using multiple etching steps. Preliminary cavities (20) formed by locally anisotropic etching to nearly the final depth have irregular (46) sidewalls (44) and steep and/or inconsistent sidewall (44) to bottom (54) intersection angles (48). This leads to less than desired cavity diaphragm (26) burst strengths. Final cavities (42) with smooth sidewalls (50), smaller and consistent sidewall (50) to bottom (54) intersection angles (58), and having more than doubled cavity diaphragm (26) burst strengths are obtained by treating the preliminary cavities (20) with TMAH etchant, preferably relatively dilute TMAH etchant. In a preferred embodiment, a cleaning step is performed between the etching step and the TMAH treatment step to remove any anisotropic etching by-products present on the preliminary cavities' (20) initial sidewalls (44).
    Type: Application
    Filed: April 15, 2011
    Publication date: October 18, 2012
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventors: Srivatsa G. Kundalgurki, Scott Dye
  • Publication number: 20120175467
    Abstract: A micrometeoroid and orbital debris-integrated multi-layer insulation (MMOD/IMLI) structure including at least one ballistic layer, which may be flexible, and at least one insulation layer, which may also be flexible is described. The ballistic layer or layers and the insulation layer or layers may be separated by a plurality of spacers. In one example, the spacers include a leg extending obliquely between the ballistic layer and the insulation layer. The spacer may include three deformable legs defining a tri-pod configuration with the tri-pod configuration including a ring supporting the legs.
    Type: Application
    Filed: December 7, 2011
    Publication date: July 12, 2012
    Applicant: QUEST PRODUCT DEVELOPMENT CORPORATION
    Inventors: Scott Dye, Alan Kopelove