Abstract: A plasma etcher for processing a semiconductor wafer and avoid sodium contamination is provided. The etcher includes a chamber having first and second adjoining regions. The etcher further includes a radio frequency source for generating plasma in the first region from delivered gas. A separator is positioned between the first and second regions for transmitting nonionized gas into the second region.

Abstract: The present invention provides a method of roughing a metallic surface. In one embodiment, the method includes the steps of positioning a pressurized grit source a predetermined distance from and at an angle substantially perpendicular to the metallic surface of the object that is to be roughened, projecting grit from the pressurized grit source against the metallic surface, forming a grit impact area, which in certain embodiments may be seven inches square, on the metallic surface, and moving the pressurized grit source from the grit impact area after an amount of time that ranges from about three seconds to about eight seconds.