Abstract: There is provided a detection device that comprises a light source, a light sensor and an at least partially light-transmitting element that supports growth of at least one analyte selected from among fungi and bacteria. The light source, the at least partially light-transmitting element and the light sensor are positioned relative to one another and oriented relative to one another such that when the light source is illuminated, at least some of the light emitted from the light source passes through the at least partially light-transmitting element and is received by the light sensor. There is also provided a method of detecting an analyte, comprising illuminating a light source to emit light, and detecting an intensity of light that passes through an at least partially light-transmitting device that comprises an at least partially light-transmitting element that supports growth of at least one analyte selected from among fungi and bacteria.

Abstract: A safety device comprising an article of clothing, first and second chambers in which first and second chemiluminescent compositions (which, if mixed, would produce electromagnetic radiation) are positioned, respectively. Also, a safety device comprising an article of clothing, tubing affixed to the clothing, the tubing defining a first chamber, first and second chemiluminescent compositions and a pump which is activatable to move at least the first chemiluminescent composition within the first chamber. Also, a method of illuminating an article of clothing, comprising mixing first and second chemiluminescent compositions to form a chemiluminescent mixture, and pumping the chemiluminescent mixture within at least a first chamber. Also, a method of illuminating an article of clothing, comprising mixing first and second chemiluminescent compositions in a first chamber, the first chamber being affixed to an article of clothing.

Abstract: There is provided a detection device that comprises a light source, a light sensor and an at least partially light-transmitting element that supports growth of at least one analyte selected from among fungi and bacteria. The light source, the at least partially light-transmitting element and the light sensor are positioned relative to one another and oriented relative to one another such that when the light source is illuminated, at least some of the light emitted from the light source passes through the at least partially light-transmitting element and is received by the light sensor. There is also provided a method of detecting an analyte, comprising illuminating a light source to emit light, and detecting an intensity of light that passes through an at least partially light-transmitting device that comprises an at least partially light-transmitting element that supports growth of at least one analyte selected from among fungi and bacteria.

Abstract: A soup composition comprises an edible soup material and an edible binding/molding substance, and is in the form of a non-liquid shape. A method of making a soup composition comprises mixing an edible soup material with an edible binding/molding substance to provide a soup mixture, depositing the soup mixture into a mold, and molding the soup mixture into a non-liquid shape. A method of making a soup composition, comprises depositing into a mold a soup mixture comprising an edible soup material and an edible binding/molding substance, and molding the soup mixture into a non-liquid shape.

Abstract: A device for measuring thickness and/or rate of thickness increase of a film comprises at least one piezoelectric element, and first and second electrodes in contact with the piezoelectric element. A method of measuring thickness and/or rate of thickness increase of a film comprises applying a voltage across a piezoelectric element from a first electrode to a second electrode, thereby causing the piezoelectric element to vibrate, and measuring the rate of vibration of the piezoelectric element. Heat may be applied to the piezoelectric element. The piezoelectric element may be formed of quartz crystal, e.g., IT-cut or near-IT-cut.

Abstract: There is provided a method and apparatus that monitors and records the status and cargo inventory of a shipping container. The shipping container includes a container control unit that records and monitors the status and inventory particular to that container. Sensors are provided within the container to determine the container status. A piezoceramic actuator provides power to rechargeable batteries in the container control unit. Thus the container includes a self contained power source. A bridge control unit monitors and records the status and inventory of every container on a vessel. A remote control unit monitors and records the status and inventory of every container worldwide.

Abstract: A signal generation system, comprising a piezoelectric device which, upon actuation, generates voltage, and a wireless transmitter which generates a wireless signal when the piezoelectric device generates the voltage. A signal generation system, comprising signal generating devices, each wireless transmitter generating a respective signal comprising transmission which identifies the wireless transmitter. A signal generation system, comprising signal generating devices, each of the signal generating devices being mounted in or on respective structures which are free to move any distance relative to each other. A method of generating a signal, comprising actuating a piezoelectric device to generate an electrical signal, conveying the signal to a wireless transmitter, and transmitting a wireless transmission.

Abstract: A device for measuring thickness and/or rate of thickness increase of a film comprises at least one piezoelectric element, and first and second electrodes in contact with the piezoelectric element. A method of measuring thickness and/or rate of thickness increase of a film comprises applying a voltage across a piezoelectric element from a first electrode to a second electrode, thereby causing the piezoelectric element to vibrate, and measuring the rate of vibration of the piezoelectric element. Heat may be applied to the piezoelectric element. The piezoelectric element may be formed of quartz crystal, e.g., IT-cut.

Abstract: A device for measuring thickness and/or rate of thickness increase of a film comprises at least one piezoelectric element, and first and second electrodes in contact with the piezoelectric element. A method of measuring thickness and/or rate of thickness increase of a film comprises applying a voltage across a piezoelectric element from a first electrode to a second electrode, thereby causing the piezoelectric element to vibrate, and measuring the rate of vibration of the piezoelectric element. Heat may be applied to the piezoelectric element. The piezoelectric element may be formed of quartz crystal, e.g., IT-cut.

Abstract: A device for measuring thickness and/or rate of thickness increase of a film comprises at least one piezoelectric element, and first and second electrodes in contact with the piezoelectric element. A method of measuring thickness and/or rate of thickness increase of a film comprises applying a voltage across a piezoelectric element from a first electrode to a second electrode, thereby causing the piezoelectric element to vibrate, and measuring the rate of vibration of the piezoelectric element. Heat may be applied to the piezoelectric element. The piezoelectric element may be formed of quartz crystal, e.g., IT-cut.

Abstract: A sputtering process for efficiently preparing amorphous semiconducting films having a reduced number of localized states is disclosed. In particular, hydrogenated semiconductor films free of polyhydrides may be prepared according to the inventive process. In one application of the process, a silicon target is simultaneously bombarded by separate beams of relatively heavy sputtering ions, such as argon ions, effective in sputtering the target at relatively high rates, and by ions of a substance effective in passivating localized states in amorphous semiconducting films, such as hydrogen ions. The products of this sputtering process are collected on remotely located substrates to form a passivated amorphous semiconductor film. In another application of the process, a target composed of a semiconductor alloy is used with separate sputtering and passivating ion beams directed at the target to deposit a passivated compound semiconductor film.

Abstract: Apparatus and method for producing semiconducting films on a substrate in a vacuum chamber comprising a plasma generator, means for directing and accelerating an ion beam from the plasma to a sputtering target also contained within the vacuum chamber. A shield means having a low sputtering efficiency compared to the sputtered target is placed in the vacuum chamber between stray ion beams and the vacuum chamber surface and any implements to intercept stray or deflected ion beams and thereby minimize sputtering of the vacuum chamber and implements by the plasma which in turn minimizes the material of which the vacuum chamber and implements are made being present as impurities in the newly formed film. In a preferred embodiment amorphous silicon films are prepared with a ion beam containing a reactive gas which passivates the dangling bonds in silicon film.

Abstract: A method for producing semiconducting films on a substrate wherein a plasma of a reactive gas is generated and an ion beam from the plasma is directed and accelerated toward a target of material of which the film is to be formed. The target which is maintained in a vacuum chamber at reduced pressure, is sputtered with the reactive ion beam and the material sputtered off the target is collected as a film on a substrate which is physically isolated from the plasma generating process and the sputtering process. Preferably the reactive gas is present in a mixture with an inert gas heavier than the reactive gas.