Patents by Inventor Scott F. Johnson

Scott F. Johnson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11922241
    Abstract: A printing system is disclosed.
    Type: Grant
    Filed: March 13, 2023
    Date of Patent: March 5, 2024
    Assignee: Ricoh Company, Ltd.
    Inventors: Mikel Stanich, Walter F. Kailey, Scott R. Johnson, Pallavi Premkumar, William Manchester
  • Publication number: 20130073101
    Abstract: Embodiments of the invention can provide systems and methods for startup of a power plant. According to one embodiment of the invention, a system can be provided. The system can include a computer processor. The system can also include a memory operable to store computer-executable instructions operable to determine a current state of the power plant; determine an anticipated future state of the power plant; and determine a startup profile between the current state of the power plant and the anticipated future state of the power plant based on at least one parameter and a desired result.
    Type: Application
    Filed: September 15, 2011
    Publication date: March 21, 2013
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Michael James O'Connor, Mark S. Schroder, Scott F. Johnson, Joel Donnell Holt
  • Patent number: 7731483
    Abstract: Third stage turbine buckets have airfoil profiles substantially in accordance with Cartesian coordinate values of X, Y and Z? set forth Table I wherein X and Y values are in inches and the Z? values are non-dimensional values from 0 to 1 convertible to Z distances in inches by multiplying the Z? values by the height of the airfoil in inches and adding the radius of the airfoil base. The X and Y values are distances which, when connected by smooth continuing arcs, define airfoil profile sections at each distance Z. The profile sections at each distance Z are joined smoothly to one another to form a complete airfoil shape. The X, Y and Z distances may be scalable as a function of the same constant or number to provide a scaled up or scaled down airfoil section for the bucket. The nominal airfoil given by the X, Y and Z distances lies within an envelope of +/?0.0.060 inches in directions normal to the surface of the airfoil.
    Type: Grant
    Filed: August 1, 2007
    Date of Patent: June 8, 2010
    Assignee: General Electric Company
    Inventors: Jon Robert DeLong, Craig Allen Bielek, Tommy Dee Hayes, Benjamin Arnette Lagrange, Scott F. Johnson
  • Publication number: 20090035145
    Abstract: Third stage turbine buckets have airfoil profiles substantially in accordance with Cartesian coordinate values of X, Y and Z? set forth Table I wherein X and Y values are in inches and the Z? values are non-dimensional values from 0 to 1 convertible to Z distances in inches by multiplying the Z? values by the height of the airfoil in inches and adding the radius of the airfoil base. The X and Y values are distances which, when connected by smooth continuing arcs, define airfoil profile sections at each distance Z. The profile sections at each distance Z are joined smoothly to one another to form a complete airfoil shape. The X, Y and Z distances may be scalable as a function of the same constant or number to provide a scaled up or scaled down airfoil section for the bucket. The nominal airfoil given by the X, Y and Z distances lies within an envelope of ±0.0.060 inches in directions normal to the surface of the airfoil.
    Type: Application
    Filed: August 1, 2007
    Publication date: February 5, 2009
    Applicant: General Electric Company
    Inventors: Jon Robert DeLong, Craig Allen Bielek, Tommy Dee Hayes, Benjamin Arnette Lagrange, Scott F. Johnson
  • Patent number: 7078347
    Abstract: A gate structure (30) is formed over a semiconductor (10). Sidewall structures (200) of a first width W1 are formed adjacent to the gate structure (30) and source and drain regions (90) are formed in the semiconductor (10). An etch process is performed to reduce the width of the sidewall structure to W2 and silicide regions (110) are then formed adjacent to the sidewall structures (205).
    Type: Grant
    Filed: March 6, 2003
    Date of Patent: July 18, 2006
    Assignee: Texas Instruments Incorporated
    Inventors: Freidoon Mehrad, Scott F. Johnson, Reji K. Koshy
  • Publication number: 20040175911
    Abstract: A gate structure (30) is formed over a semiconductor (10). Sidewall structures (200) of a first width W1 are formed adjacent to the gate structure (30) and source and drain regions (90) are formed in the semiconductor (10). An etch process is performed to reduce the width of the sidewall structure to W2 and silicide regions (110) are then formed adjacent to the sidewall structures (205).
    Type: Application
    Filed: March 6, 2003
    Publication date: September 9, 2004
    Inventors: Freidoon Mehrad, Scott F. Johnson, Reji K. Koshy