Abstract: An SRAM facility adapted to power an address path using a first developed supply voltage and to power a data path using a second developed supply voltage, the first and second developed power supplies being separate, distinct, and different. The SRAM facility includes a power supply facility or a voltage supply facility adapted to develop the first and second supply voltages.

Abstract: An adaptive voltage converter adapted to compensate for the exponential sensitivities of sub-threshold and near-threshold circuits. The converter can change its power/performance characteristics between different energy modes. The converter may comprise two or more voltage converters/regulators. A multiplexing circuit selects between the outputs of the several converters/regulators depending on the state of a control signal generated by a control facility. The converter is specially adapted to change the output of each converter/regulator based on a number of variables, including, for example, process corner, temperature and input voltage.

Abstract: An SRAM circuit that includes a biasing circuit adapted to selectively bias the transistors of the SRAM array to lower the threshold voltage of selected transistors. The SRAM circuit includes well voltages and positive voltages that are selectively different, and substrate voltages and ground voltages that are selectively different.

Abstract: An adaptive voltage converter adapted to compensate for the exponential sensitivities of sub-threshold and near-threshold circuits. The converter can change its power/performance characteristics between different energy modes. The converter may comprise two or more voltage converters/regulators. A multiplexing circuit selects between the outputs of the several converters/regulators depending on the state of a control signal generated by a control facility. The converter is specially adapted to change the output of each converter/regulator based on a number of variables, including, for example, process corner, temperature and input voltage.

Abstract: The present invention relates to a device and method of training a child to go to sleep by providing a light which dims in response to a child sound or a presence other than the child and turns back on or brightens when the sound stops or the presence leaves.

Abstract: An SRAM facility adapted to power an address path using a first developed supply voltage and to power a data path using a second developed supply voltage, the first and second developed power supplies being separate, distinct, and different. The SRAM facility includes a power supply facility or a voltage supply facility adapted to develop the first and second supply voltages.

Abstract: An SRAM facility adapted to power an address path using a first developed supply voltage and to power a data path using a second developed supply voltage, the first and second developed power supplies being separate, distinct, and different. The SRAM facility includes a power supply facility or a voltage supply facility adapted to develop the first and second supply voltages.

Abstract: An SRAM circuit that includes a biasing circuit adapted to selectively bias the transistors of the SRAM array to lower the threshold voltage of selected transistors. The SRAM circuit includes well voltages and positive voltages that are selectively different, and substrate voltages and ground voltages that are selectively different.

Abstract: A method and apparatus for generating an improved reference voltage for use, for example, in a system requiring accurate low power operation. In particular, our reference voltage generator is adapted to output VREF as a function of the voltage difference between V1 and V2. The reference voltage generator is further adapted to include our reference voltage tuner to compensate for predetermined sensitivities of the reference voltage VREF, and to adjust the absolute value of VREF. During manufacturing and system test, a driver may be used to drive a buffered or unbuffered version of VREF to off-chip test functionality. Also, a configuration memory may be used to store the trim settings during normal operation, and make such settings available to outside resources.

Abstract: The present invention relates to a device and method of training a child to go to sleep by providing a light which dims in response to a child sound or a presence other than the child and turns back on or brightens when the sound stops or the presence leaves.

Abstract: An improved reference current generator for use in an integrated circuit. A voltage difference generator generates two voltages that are separated by a relatively small electrical potential. The two closely separated voltages are applied across a resistive element with relatively large impedance value resulting in a small and stable reference current. The stable reference current is mirrored and, if desired, amplified for use on the integrated circuit. A driver selectively drives state information off chip for assisting in post-silicon correction of unwanted sensitivities. A configuration memory stores values used to adjust effective device widths and lengths for correcting unwanted sensitivities.

Abstract: A low power autonomous peripheral operative to receive configuration or command data and to perform the designated operation(s) without interaction of a processor.

Abstract: An SRAM facility adapted to power an address path using a first developed supply voltage and to power a data path using a second developed supply voltage, the first and second developed power supplies being separate, distinct, and different. The SRAM facility includes a power supply facility or a voltage supply facility adapted to develop the first and second supply voltages.

Abstract: An improved reference current generator for use in an integrated circuit. A voltage difference generator generates two voltages that are separated by a relatively small electrical potential. The two closely separated voltages are applied across a resistive element with relatively large impedance value resulting in a small and stable reference current. The stable reference current is mirrored and, if desired, amplified for use on the integrated circuit. A driver selectively drives state information off chip for assisting in post-silicon correction of unwanted sensitivities. A configuration memory stores values used to adjust effective device widths and lengths for correcting unwanted sensitivities.

Abstract: The present invention relates to a device and method of training a child not to cry by providing a light which dims in response to a child crying and turns back on or brightens when the child stops crying.

Abstract: A low power autonomous peripheral operative to receive configuration or command data and to perform the designated operation(s) without interaction of a processor.

Abstract: An SRAM circuit that includes a biasing circuit adapted to selectively bias the transistors of the SRAM array to lower the threshold voltage of selected transistors. The SRAM circuit includes well voltages and positive voltages that are selectively different, and substrate voltages and ground voltages that are selectively different.

Abstract: A test probe assembly includes a first elongate electrically conductive plunger that extends from a proximal first plunger end to a distal first plunger end, and is defined in part by a central longitudinal axis. The first plunger has a first spring latch at the distal first plunger end. At least a portion of the first plunger has an arc with a first plunger outer contact point opposite the first spring latch relative to the longitudinal axis. The first plunger is disposed in a spring. The first plunger outer contact point in contact with the inner diameter of the spring, and the first spring latch engages at least a portion of the spring.

Abstract: A flash memory system for use in an electronic system comprising an integrated circuit such as a microcontroller. The flash memory system embodies one or more circuits adapted to operate at sub- or near-threshold voltage levels. These low-power circuits are selectively activated or de-activated to balance power dissipation with the response time of the memory system required in particular applications.

Abstract: A flash memory system for use in an electronic system comprising an integrated circuit such as a microcontroller. The flash memory system embodies one or more circuits adapted to operate at sub- or near-threshold voltage levels. These low-power circuits are selectively activated or de-activated to balance power dissipation with the response time of the memory system required in particular applications.