Abstract: A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.

Abstract: A magnet assembly is disclosed for steering ions used in the formation of a material layer upon a substrate during a pulsed DC physical vapour deposition process. Apparatus and methods are also disclosed incorporating the assembly for controlling thickness variation in a material layer formed via pulsed DC physical vapour deposition. The magnet assembly comprises a magnetic field generating arrangement for generating a magnetic field proximate the substrate and means for rotating the ion steering magnetic field generating arrangement about an axis of rotation, relative to the substrate. The magnetic field generating arrangement comprises a plurality of magnets configured to an array which extends around the axis of rotation, wherein the array of magnets are configured to generate a varying magnetic field strength along a radial direction relative to the axis of rotation.

Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

Abstract: A magnet assembly is disclosed for steering ions used in the formation of a material layer upon a substrate during a pulsed DC physical vapour deposition process. Apparatus and methods are also disclosed incorporating the assembly for controlling thickness variation in a material layer formed via pulsed DC physical vapour deposition. The magnet assembly comprises a magnetic field generating arrangement for generating a magnetic field proximate the substrate and means for rotating the ion steering magnetic field generating arrangement about an axis of rotation, relative to the substrate. The magnetic field generating arrangement comprises a plurality of magnets configured to an array which extends around the axis of rotation, wherein the array of magnets are configured to generate a varying magnetic field strength along a radial direction relative to the axis of rotation.

Abstract: A method of depositing a film on a substrate is provided. The method includes positioning the substrate on a substrate support in a chamber and depositing the film on the substrate using a DC magnetron sputtering process in which an electrical bias signal causes ions to bombard the substrate. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region, and the substrate is positioned on the central region so that a portion of the substrate overlays the edge region and is spaced apart therefrom.

Abstract: A PVD apparatus can be operated in a cleaning mode to remove material from an electrically conductive feature formed on a semiconductor substrate. The semiconductor substrate with the electrically conductive feature formed thereon is positioned on a substrate support in a chamber of the PVD apparatus. A shutter is deployed within the chamber to divide the chamber into a first compartment in which the semiconductor substrate and the substrate support are positioned, and a second compartment in which a target of the PVD apparatus is positioned. A first plasma is generated in the first compartment to remove material from the electrically conductive feature and a second plasma is simultaneously generated in the second compartment to clean the target.

Abstract: A substrate is positioned on a substrate supporting upper surface of a substrate support. An arrangement of permanent magnets is positioned beneath the substrate supporting upper surface so that permanent magnets are disposed underneath the substrate. The deposition material is deposited into the recesses formed in the substrate by sputtering a sputtering material from a target of a magnetron device. While depositing the deposition material, the arrangement of permanent magnets provides a substantially uniform lateral magnetic field across the surface of the substrate which extends into a region beyond a periphery of the substrate to enhance resputtering of deposited material deposited into the recesses.

Abstract: A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.

Abstract: A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.

Abstract: Pulsed DC reactive sputtering of a target deposits an additive-containing aluminium nitride film onto a metallic layer of a semiconductor substrate. The additive-containing aluminium nitride film contains an additive element selected from scandium, yttrium, titanium, chromium, magnesium and hafnium. Depositing the additive-containing aluminium nitride film includes introducing a gaseous mixture comprising nitrogen gas and an inert gas into the chamber at a flow rate, in which the flow rate of the gaseous mixture comprises a nitrogen gas flow rate, and in which the nitrogen gas flow rate is less than or equal to about 50% of the flow rate of the gaseous mixture and also is sufficient to fully poison the target.

Abstract: Sputter depositing a metallic layer on a substrate in the fabrication of a resonator device includes providing a magnetron sputtering apparatus comprising a chamber, a substrate support disposed within the chamber, a target made from a metallic material, and a plasma generating device, wherein the substrate support and the target are separated by a distance of 10 cm or less; supporting the substrate on the substrate support; performing a DC magnetron sputtering step that comprises sputtering the metallic material from the target onto the substrate so as to form a metallic layer on the substrate, wherein during the DC magnetron sputtering step the chamber has a pressure of at least 6 mTorr of a noble gas, the target is supplied with a power having a power density of at least 6 W/cm2, and the substrate has a temperature in the range of 200-600° C.

Abstract: A method of depositing a film on a substrate is provided. The method includes positioning the substrate on a substrate support in a chamber and depositing the film on the substrate using a DC magnetron sputtering process in which an electrical bias signal causes ions to bombard the substrate. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region, and the substrate is positioned on the central region so that a portion of the substrate overlays the edge region and is spaced apart therefrom.

Abstract: A DC magnetron sputtering apparatus is for depositing a film on a substrate. The apparatus includes a chamber, a substrate support positioned within the chamber, a DC magnetron, and an electrical signal supply device for supplying an electrical bias signal that, in use, causes ions to bombard a substrate positioned on the substrate support. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region.

Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

Abstract: In a method for sputter depositing an additive-containing aluminium nitride film containing an additive element like Sc or Y, a first layer of the additive-containing aluminium nitride film is deposited onto a substrate disposed within a chamber by pulsed DC reactive sputtering. A second layer of the additive-containing aluminium nitride film is deposited onto the first layer by pulsed DC reactive sputtering. The second layer has the same composition as the first layer. A gas or gaseous mixture is introduced into the chamber when depositing the first layer. A gaseous mixture comprising nitrogen gas and an inert gas is introduced into the chamber when depositing the second layer. The percentage of nitrogen gas in the flow rate (in sccm) when depositing the first layer is greater than that when depositing the second layer.

Abstract: A method is for depositing by pulsed DC reactive sputtering an additive containing aluminium nitride film containing at least one additive element selected from Sc, Y, Ti, Cr, Mg and Hf. The method includes depositing a first layer of the additive containing aluminium nitride film onto a film support by pulsed DC reactive sputtering with an electrical bias power applied to the film support. The method further includes depositing a second layer of the additive containing aluminium nitride film onto the first layer by pulsed DC reactive sputtering with no electrical bias power applied to the film support or with an electrical bias power applied to the film support which is lower than the electrical bias power applied during the sputter deposition of the first layer, where the second layer has the same composition as the first layer.

Abstract: A magnet assembly is disclosed for steering ions used in the formation of a material layer upon a substrate during a pulsed DC physical vapour deposition process. Apparatus and methods are also disclosed incorporating the assembly for controlling thickness variation in a material layer formed via pulsed DC physical vapour deposition. The magnet assembly comprises a magnetic field generating arrangement for generating a magnetic field proximate the substrate and means for rotating the ion steering magnetic field generating arrangement about an axis of rotation, relative to the substrate. The magnetic field generating arrangement comprises a plurality of magnets configured to an array which extends around the axis of rotation, wherein the array of magnets are configured to generate a varying magnetic field strength along a radial direction relative to the axis of rotation.

Abstract: A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.

Abstract: A DC magnetron sputtering apparatus is for depositing a film on a substrate. The apparatus includes a chamber, a substrate support positioned within the chamber, a DC magnetron, and an electrical signal supply device for supplying an electrical bias signal that, in use, causes ions to bombard a substrate positioned on the substrate support. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region.