Abstract: The present disclosure relates to the formation of polycrystalline diamond materials with fine diamond grains and nano-sized particles of a grain growth inhibitor. In one embodiment, a method of fabricating a polycrystalline diamond material is provided. The method includes providing a mixture of diamond particles with an average particle size of about 1 micron or less, distributing a plurality of nano-sized titanium-containing particles with the diamond mixture, to act as a grain growth inhibitor, and sintering the mixture of diamond particles and titanium-containing particles at high pressure and high temperature to create a polycrystalline structure of sintered diamond grains. The sintered diamond grains have an average size of about 1 micron or less.

Abstract: The present disclosure relates to cubic boron nitride (cBN) cutting elements that have high cBN content and that are cuttable by electric discharge machining (EDM). A cutting element according to an embodiment includes a self-sintered polycrystalline cubic boron nitride (PCBN) compact, having a first phase of cubic boron nitride (cBN) particles and a ceramic binder phase with titanium compounds. The first phase occupies greater than 80% by volume of the self-sintered PCBN compact. The self-sintered PCBN compact has an electrical conductivity sufficient to be cuttable by electrical discharge machining.

Abstract: The present disclosure relates to cubic boron nitride (cBN) cutting elements that have high cBN content and that are cuttable by electric discharge machining (EDM). A cutting element according to an embodiment includes a self-sintered polycrystalline cubic boron nitride (PCBN) compact, having a first phase of cubic boron nitride (cBN) particles and a ceramic binder phase with titanium compounds. The first phase occupies greater than 80% by volume of the self-sintered PCBN compact. The self-sintered PCBN compact has an electrical conductivity sufficient to be cuttable by electrical discharge machining.

Abstract: The present disclosure relates to cubic boron nitride (cBN) cutting elements that have high cBN content and that are cuttable by electric discharge machining (EDM). A cutting element according to an embodiment includes a self-sintered polycrystalline cubic boron nitride (PCBN) compact, having a first phase of cubic boron nitride (cBN) particles and a ceramic binder phase with titanium compounds. The first phase occupies greater than 80% by volume of the self-sintered PCBN compact. The self-sintered PCBN compact has an electrical conductivity sufficient to be cuttable by electrical discharge machining.

Abstract: The present invention relates to tungsten rhenium compounds and composites and to methods of forming the same. Tungsten and rhenium powders are mixed together and sintered at high temperature and high pressure to form a unique compound. An ultra hard material may also be added. The tungsten, rhenium, and ultra hard material are mixed together and then sintered at high temperature and high pressure.

Abstract: The present disclosure relates to the formation of polycrystalline diamond materials with fine diamond grains and nano-sized particles of a grain growth inhibitor. In one embodiment, a method of fabricating a polycrystalline diamond material is provided. The method includes providing a mixture of diamond particles with an average particle size of about 1 micron or less, distributing a plurality of nano-sized titanium-containing particles with the diamond mixture, to act as a grain growth inhibitor, and sintering the mixture of diamond particles and titanium-containing particles at high pressure and high temperature to create a polycrystalline structure of sintered diamond grains. The sintered diamond grains have an average size of about 1 micron or less.

Abstract: The present disclosure relates to cubic boron nitride (cBN) cutting elements that have high cBN content and that are cuttable by electric discharge machining (EDM). A cutting element according to an embodiment includes a self-sintered polycrystalline cubic boron nitride (PCBN) compact, having a first phase of cubic boron nitride (cBN) particles and a ceramic binder phase with titanium compounds. The first phase occupies greater than 80% by volume of the self-sintered PCBN compact. The self-sintered PCBN compact has an electrical conductivity sufficient to be cuttable by electrical discharge machining.

Abstract: The present invention relates to tungsten rhenium compounds and composites and to methods of forming the same. Tungsten and rhenium powders are mixed together and sintered at high temperature and high pressure to form a unique compound. An ultra hard material may also be added. The tungsten, rhenium, and ultra hard material are mixed together and then sintered at high temperature and high pressure.

Abstract: A method for forming an ultra hard material layer is provided. The method includes disposing a metallic liner inside the periphery of a refractory metal enclosure, introducing ultra hard material feed stock into the enclosure, and sintering using HPHT processing and cooling to form the ultra hard material layer, substantially free of peripheral cracking, chipping and fracturing.

Abstract: A method for forming an ultra hard material layer is provided. The method includes disposing a metallic liner inside the periphery of a refractory metal enclosure, introducing ultra hard material feed stock into the enclosure, and sintering using HPHT processing and cooling to form the ultra hard material layer, substantially free of peripheral cracking, chipping and fracturing.