Abstract: A re-entrant, low-pressure, electrodeless lamp apparatus includes two identical re-entrant center conductors driven in quadrature, resulting in a matched lamp input impedance in both the off and on states nearly independent of incident microwave power.

Abstract: A high-gain, high-frequency, high-power, push-pull amplifier employing a pair of static induction transistors (SIT's) in common-source configuration. A pair of capacitances each of approximately the same capacitive value as the drain-to-gate parasitic feedback capacitance of each SIT are cross-coupled between the drains and gates of the pair of SIT's to neutralize the drain-to-gate capacitances and provide stable operation.

Abstract: A 3 dB quadrature coupler is connected to an RF input terminal and an LO input terminal, and its outputs are connected to first and second antiphase power dividers. The outputs of the first and second antiphase power dividers are individually connected to the gates of four field effect transistors (FET's). The drains of two of the FET's are connected together and to a low pass filter, and the drains of the other two FET's are connected together and to a second low pass filter. The outputs of the filters are connected to the two inputs of a differential amplifier, and the IF signal is taken at the output of the differential amplifier.

Abstract: A first 3 dB quadrature coupler is connected to an RF input terminal and its outputs are connected to first and second antiphase power dividers. The outputs of the first and second antiphase power dividers are individually connected to the first gate of four dual-gate field effect transistors (FET's). A second 3 dB quadrature coupler is connected to an LO input terminal and its outputs are connected to third and fourth antiphase power dividers. The outputs of the third and fourth antiphase power dividers are individually connected to the second gates of the four FET's. The drains of two of the FET's are connected together and to a low pass filter, and the drains of the other two FET's are connected together and to a second low pass filter. The outputs of the filters are connected to the two inputs of a differential amplifier, and the IF signal is taken at the output of the differential amplifier.

Abstract: Energy source of a low power high frequency oscillator section driving a high power high gain amplifier section. The amplifier section includes one or more SIT's. The dc operating potential is applied to the drain electrode of one of the SIT's and is supplied to the other through a dc path from the source electrode of the one SIT to the drain electrode of the other. Operating potential from the dc biasing network between the source and gate electrode of an SIT in the amplifier section is conducted through a dc path to a transistor in the oscillator section to provide operating power for the oscillator section. The oscillator output is connected through a high frequency coupling dc blocking path to the amplifier input to provide a drive signal to be amplified and extracted at the amplifier output.

Abstract: A power source consisting of a low power high frequency oscillator section driving a high power high gain amplifier section. The amplifier section includes one or more SIT's. The dc operating potential is applied to the drain electrode of one of the SIT's and is supplied to the other through a dc path from the source electrode of the one SIT to the drain electrode of the other. Operating potential from the dc biasing network between the gate and source electrodes of an SIT in the amplifier section is conducted through a dc path to a transistor in the oscillator section to provide operating power for the oscillator section. The oscillator output is connected through a high frequency coupling dc blocking path to the amplifier input to provide a drive signal to be amplified and extracted at the amplifier output.

Abstract: High voltage, high frequency amplifier employing power transistors. The amplifier provides parallel ac signal amplification paths through each transistor and a single dc power path through the transistors in series. In one embodiment two FET's have their gate electrodes connected to an input terminal and their drain electrodes connected to an output terminal so as to provide two parallel ac amplifying paths while blocking dc current flow. The drain electrode of the first FET is connected through an RF choke to a source of dc operating potential, and its source electrode is connected through an RF choke to the drain electrode of the second FET. The source electrode of the second FET is connected to ground through a zener diode. A single dc conductive path is thus provided between the source of operating potential and ground through the two FET's in series.

Abstract: High voltage, high frequency amplifier employing power transistors. The amplifier provides parallel ac signal amplification paths through each transistor and a single dc power path through the transistors in series. In one embodiment two FET's have their source electrodes connected to an input terminal and their drain electrodes connected to an output terminal so as to provide two parallel ac amplifying paths while blocking dc current flow. The drain electrode of the first FET is connected through an RF choke to source of dc operating potential, and its source electrode is connected through an RF choke to the drain electrode of the second FET. The gate electrode of the second FET is connected to ground. A single dc conductive path is thus provided between the source of operating potential and ground through the two FET's in series.