Abstract: A probe card apparatus is used to functionally test an integrated circuit wafer at elevated temperatures. In one form, a probe card having a cavity between first and second opposite sides is provided. Within the probe card cavity is a probe card ring which is used to support and position a plurality of probe leads. The plurality of probe leads are attached to the first side of the probe card and extend toward the cavity and are used to make electrical contact with an integrated circuit wafer. Radiant heat is provided in close proximity to the probe card ring for heating the plurality of probe leads to a predetermined temperature and for sustaining the predetermined temperature to accurately keep each probe lead at a predetermined location within the cavity.