Abstract: An electrode (110) for an electrochemical cell, comprising a conductive, porous, hydrophilic, gas-permeable and a liquid-permeable liquid-side layer (111) having a liquid-facing side (116), and a non-conductive, porous, hydrophobic, gas-permeable and liquid-impermeable gas-side layer (112) having a gas-facing side (117). Gas-producing electrochemical reactions are promoted at an interface (115) between the liquid-side layer (111) and the gas-side layer (112) by a beneficial relationship of capillary pressures of the electrode layers. The liquid-side layer (111) exhibits a repulsive capillary pressure in the liquid electrolyte (113) of the cell (110) and the gas-side layer exhibits an attractive capillary pressure in the liquid electrolyte (113).

Abstract: Disclosed are electrochemical cells and methods of operation. In one aspect is disclosed an electrochemical cell that has a liquid-electrolyte or a gel-electrolyte, the cell comprising: an electrode, preferably a gas diffusion electrode; a busbar attached to a current collector of the electrode; and a second electrode to which the first electrode is connected in electrical series. In another aspect is disclosed a plurality of electrochemical cells, comprising: a first electrochemical cell comprising a first cathode and a first anode, wherein at least one of the first cathode and the first anode is a gas diffusion electrode; a second electrochemical cell comprising a second cathode and a second anode, wherein at least one of the second cathode and the second anode is a gas diffusion electrode; wherein, the first cathode is electrically connected in series to the second anode by an electron conduction pathway.

Abstract: A rifle action for a firearm includes a receiver, a breech bolt and a mechanical case ejector. The receiver has a receiver bore, a first sidewall with an opening for ejecting shell casings, and a second sidewall with a blind pocket on a side facing the receiver bore. The ejector is rotatably mounted by a pin that extends vertically between top and bottom surfaces of the blind pocket. The ejector has a base that fits into the blind pocket and a finger that extends into the receiver bore. The ejector has a first position in which the finger is located out of a path of movement of the breech bolt, and a second position in which the finger extends into a path of movement of the breech bolt upon rearward movement of the bolt to eject shell casings from the receiver bore. The blind pocket can be formed by EDM.

Abstract: Stress-inducing structures, methods, and materials are disclosed. In one embodiment, an isolation region includes an insulating material in a lower portion of a trench formed in a workpiece and a stress-inducing material disposed in a top portion of the trench over the insulating material.

Abstract: A photovoltaic device includes a substrate and has a transparent conductive oxide layer, a conductive back layer, and at least one intermediate semiconductor layer formed thereon. An isolation scribe divides and electrically isolates the oxide layer, the back layer and the semiconductor layer to define two photovoltaic cells. A conductor extends across the isolation scribe and connects the back layer of one photovoltaic cell to the oxide layer of the other photovoltaic cell.

Abstract: Stress-inducing structures, methods, and materials are disclosed. In one embodiment, an isolation region includes an insulating material in a lower portion of a trench formed in a workpiece and a stress-inducing material disposed in a top portion of the trench over the insulating material.

Abstract: Stress-inducing structures, methods, and materials are disclosed. In one embodiment, an isolation region includes an insulating material in a lower portion of a trench formed in a workpiece and a stress-inducing material disposed in a top portion of the trench over the insulating material.

Abstract: Stress-inducing structures, methods, and materials are disclosed. In one embodiment, an isolation region includes an insulating material in a lower portion of a trench formed in a workpiece and a stress-inducing material disposed in a top portion of the trench over the insulating material.

Abstract: Semiconductor integrated test structures are designed for electron beam inspection of semiconductor wafers. The test structures include pattern features that are formed in designated test regions of the wafer concurrently with pattern features of integrated circuits formed on the wafer. The test structures include conductive structures that are designed to enable differential charging between defective and non-defective features (or defective and non-defection portions of a given feature) to facilitate voltage contrast defect detection of CMOS devices, for example, using a single, low energy electron beam scan, notwithstanding the existence of p/n junctions in the wafer substrate or other elements/features.

Abstract: Stress-inducing structures, methods, and materials are disclosed. In one embodiment, an isolation region includes an insulating material in a lower portion of a trench formed in a workpiece and a stress-inducing material disposed in a top portion of the trench over the insulating material.

Abstract: Semiconductor integrated test structures are designed for electron beam inspection of semiconductor wafers. The test structures include pattern features that are formed in designated test regions of the wafer concurrently with pattern features of integrated circuits formed on the wafer. The test structures include conductive structures that are designed to enable differential charging between defective and non-defective features (or defective and non-defection portions of a given feature) to facilitate voltage contrast defect detection of CMOS devices, for example, using a single, low energy electron beam scan, notwithstanding the existence of p/n junctions in the wafer substrate or other elements/features.

Abstract: A resistor formed by a film of resistive material deposited on a dielectric substrate is trimmed by removing resistive material along a line such that the film is divided into at least two discrete areas, one, and only one, of which areas includes two terminal portions of the film.