Patents by Inventor Scott Jeffery DeBoer

Scott Jeffery DeBoer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming integrated circuitry and capacitors having a capacitor electrode having a base and a pair of walls projecting upwardly therefrom
    Patent number: 6255186
    Abstract: In accordance with one implementation the invention, a capacitor comprises two conductive capacitor electrodes separated by a capacitor dielectric layer, with at least one of the capacitor electrodes comprising at least one of Pt and Pd, and also comprising another metal which is capable of forming a conductive metal oxide when exposed to oxidizing conditions. In accordance with another. implementation, integrated circuitry includes a conductive silicon containing electrode projecting from a circuit node. A capacitor is received over the silicon containing electrode and comprises a first capacitor electrode having at least one of Pt and Pd, and also comprising another metal which is capable of forming a conductive metal oxide when exposed to oxidizing conditions. A high K capacitor dielectric layer received over the first capacitor electrode. A second capacitor electrode is received over the high K capacitor dielectric layer.
    Type: Grant
    Filed: August 20, 1998
    Date of Patent: July 3, 2001
    Assignee: Micron Technology, Inc.
    Inventors: Husam N. Al-Shareef, Scott Jeffery DeBoer, Randhir P. S. Thakur
  • Capacitors, methods of forming capacitors and integrated circuitry
    Patent number: 6239459
    Abstract: In accordance with one implementation the invention, a capacitor comprises two conductive capacitor electrodes separated by a capacitor dielectric layer, with at least one of the capacitor electrodes comprising at least one of Pt and Pd, and also comprising another metal which is capable of forming a conductive metal oxide when exposed to oxidizing conditions. In accordance with another implementation, integrated circuitry includes a conductive silicon containing electrode projecting from a circuit node. A capacitor is received over the silicon containing electrode and comprises a first capacitor electrode having at least one of Pt and Pd, and also comprising another metal which is capable of forming a conductive metal oxide when exposed to oxidizing conditions. A high K capacitor dielectric layer received over the first capacitor electrode. A second capacitor electrode is received over the high K capacitor dielectric layer.
    Type: Grant
    Filed: September 7, 1999
    Date of Patent: May 29, 2001
    Assignee: Micron Technology, Inc.
    Inventors: Husam N. Al-Shareef, Scott Jeffery DeBoer, Randhir P. S. Thakur