Patents by Inventor Scott Jeffrey Weigel
Scott Jeffrey Weigel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130295334Abstract: Described herein is a method for removing at least a portion of the carbon-containing species within an organosilicate (OSG) film by treating the OSG film with a chemical, such as but not limited to an oxidizer, exposing the OSG film to an energy source comprising ultraviolet light, or treating the OSG film with a chemical and exposing the OSG film to an energy source.Type: ApplicationFiled: July 8, 2013Publication date: November 7, 2013Inventors: Aiping Wu, Scott Jeffrey Weigel, Thomas Albert Braymer
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Patent number: 8283260Abstract: A method for preparing an interlayer dielectric to minimize damage to the interlayer's dielectric properties, the method comprising the steps of: depositing a layer of a silicon-containing dielectric material onto a substrate, wherein the layer has a first dielectric constant and wherein the layer has at least one surface; providing an etched pattern in the layer by a method that includes at least one etch process and exposure to a wet chemical composition to provide an etched layer, wherein the etched layer has a second dielectric constant, and wherein the wet chemical composition contributes from 0 to 40% of the second dielectric constant; contacting the at least one surface of the layer with a silicon-containing fluid; optionally removing a first portion of the silicon-containing fluid such that a second portion of the silicon-containing fluid remains in contact with the at least one surface of the layer; and exposing the at least one surface of the layer to UV radiation and thermal energy, wherein the layType: GrantFiled: August 13, 2009Date of Patent: October 9, 2012Assignee: Air Products and Chemicals, Inc.Inventors: Scott Jeffrey Weigel, Mark Leonard O'Neill, Mary Kathryn Haas, Laura M. Matz, Glenn Michael Mitchell, Aiping Wu, Raymond Nicholas Vrtis, John Giles Langan
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Patent number: 7999355Abstract: The present invention is a process for spin-on deposition of a silicon dioxide-containing film under oxidative conditions for gap-filling in high aspect ratio features for shallow trench isolation used in memory and logic circuit-containing semiconductor substrates, such as silicon wafers having one or more integrated circuit structures contained thereon, comprising the steps of: providing a semiconductor substrate having high aspect ratio features; contacting the semiconductor substrate with a liquid formulation comprising a low molecular weight aminosilane; forming a film by spreading the liquid formulation over the semiconductor substrate; heating the film at elevated temperatures under oxidative conditions. Compositions for this process are also set forth.Type: GrantFiled: June 26, 2009Date of Patent: August 16, 2011Assignee: Air Products and Chemicals, Inc.Inventors: Scott Jeffrey Weigel, Mark Leonard O'Neill, Bing Han, Hansong Cheng, Manchao Xiao, Chia-Chien Lee
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Publication number: 20100151206Abstract: Described herein is a method for removing at least a portion of the carbon-containing species within an organosilicate (OSG) film by treating the OSG film with a chemical, such as but not limited to an oxidizer, exposing the OSG film to an energy source comprising ultraviolet light, or treating the OSG film with a chemical and exposing the OSG film to an energy source.Type: ApplicationFiled: October 8, 2009Publication date: June 17, 2010Applicant: Air Products and Chemicals, Inc.Inventors: Aiping Wu, Scott Jeffrey Weigel, Thomas Albert Braymer
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Publication number: 20100041234Abstract: A method for preparing an interlayer dielectric to minimize damage to the interlayer's dielectric properties, the method comprising the steps of: depositing a layer of a silicon-containing dielectric material onto a substrate, wherein the layer has a first dielectric constant and wherein the layer has at least one surface; providing an etched pattern in the layer by a method that includes at least one etch process and exposure to a wet chemical composition to provide an etched layer, wherein the etched layer has a second dielectric constant, and wherein the wet chemical composition contributes from 0 to 40% of the second dielectric constant; contacting the at least one surface of the layer with a silicon-containing fluid; optionally removing a first portion of the silicon-containing fluid such that a second portion of the silicon-containing fluid remains in contact with the at least one surface of the layer; and exposing the at least one surface of the layer to UV radiation and thermal energy, wherein the layType: ApplicationFiled: August 13, 2009Publication date: February 18, 2010Applicant: Air Products and Chemicals, Inc.Inventors: Scott Jeffrey Weigel, Mark Leonard O'Neill, Mary Kathryn Haas, Laura M. Matz, Glenn Michael Mitchell, Aiping Wu, Raymond Nicholas Vrtis, John Giles Langan
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Publication number: 20100009546Abstract: The present invention is a process for spin-on deposition of a silicon dioxide-containing film under oxidative conditions for gap-filling in high aspect ratio features for shallow trench isolation used in memory and logic circuit-containing semiconductor substrates, such as silicon wafers having one or more integrated circuit structures contained thereon, comprising the steps of: providing a semiconductor substrate having high aspect ratio features; contacting the semiconductor substrate with a liquid formulation comprising a low molecular weight aminosilane; forming a film by spreading the liquid formulation over the semiconductor substrate; heating the film at elevated temperatures under oxidative conditions. Compositions for this process are also set forth.Type: ApplicationFiled: June 26, 2009Publication date: January 14, 2010Applicant: Air Products and Chemicals, Inc.Inventors: Scott Jeffrey Weigel, Mark Leonard O'Neill, Bing Han, Hansong Cheng, Manchao Xiao, Chia-Chien Lee
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Publication number: 20090298671Abstract: Silica-based materials and films having a dielectric constant of 3.7 or below and compositions and methods for making and using same are disclosed herein. In one aspect, there is provided a composition for preparing a silica-based material comprising an at least one silica source, a solvent, an at least one porogen, optionally a catalyst, and optionally a flow additive wherein the solvent boils at a temperature ranging from 90° C. to 170° C. and is selected from the group of compounds represented by the following formulas: HO—CHR8—CHR9—CH2—CHR10R11 where R8, R9, R10 and R11 can independently be an alkyl group ranging from 1 to 4 carbon atoms or a hydrogen atom; and R12—CO—R13 where R12 is a hydrocarbon group having from 3 to 6 carbon atoms; R13 is a hydrocarbon group having from 1 to 3 carbon atoms; and mixtures thereof.Type: ApplicationFiled: August 10, 2009Publication date: December 3, 2009Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Scott Jeffrey Weigel, Shrikant Narendra Khot, James Edward Mac Dougall, Thomas Albert Braymer, John Francis Kirner, Brian Keith Peterson
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Patent number: 7500397Abstract: A method for restoring a dielectric constant of a layer of a silicon-containing dielectric material having a first dielectric constant and at least one surface, wherein the first dielectric constant of the layer of silicon-containing dielectric material has increased to a second dielectric constant, the method comprising the steps of: contacting the at least one surface of the layer of silicon-containing dielectric material with a silicon-containing fluid; and exposing the at least one surface of the layer of silicon-containing dielectric material to an energy source selected from the group consisting of: UV radiation, heat, and an electron beam, wherein the layer of silicon-containing dielectric material has a third dielectric constant that is lower than the second dielectric constant after exposing the layer of silicon-containing dielectric material to the energy source.Type: GrantFiled: January 31, 2008Date of Patent: March 10, 2009Assignee: Air Products and Chemicals, Inc.Inventors: Scott Jeffrey Weigel, Mark Leonard O'Neill, Raymond Nicholas Vrtis, Dino Sinatore
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Patent number: 7482676Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.Type: GrantFiled: July 11, 2006Date of Patent: January 27, 2009Assignee: Air Products and Chemicals, Inc.Inventors: Brian Keith Peterson, John Francis Kirner, Scott Jeffrey Weigel, James Edward MacDougall, Lisa Deis, Thomas Albert Braymer, Keith Douglas Campbell, Martin Devenney, C. Eric Ramberg, Konstantinos Chondroudis, Keith Cendak
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Patent number: 7446055Abstract: This invention relates to an improvement in a deposition process for producing low dielectric films having a dielectric constant of 3, preferably <2.7 and lower. The process comprises the steps: (a) forming a liquid precursor solution comprised of an organosilicon source containing both Si—O and Si—C bonds and solvent; (b) generating a liquid mist of said liquid precursor solution, said mist existing as precursor solution droplets having a number average droplet diameter size of less than 0.5 ?m; (c) preferably electrically charging the liquid mist of said liquid precursor solution droplets; (d) depositing liquid mist of said liquid precursor solution droplets onto a substrate; and, (e) converting the thus deposited liquid mist of said liquid precursor solution droplets to a solid, low dielectric film.Type: GrantFiled: March 17, 2005Date of Patent: November 4, 2008Assignee: Air Products and Chemicals, Inc.Inventors: Scott Jeffrey Weigel, Jean Louise Vincent, Sarah Kathryn Coulter, James Edward MacDougall
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Publication number: 20080264672Abstract: A process for preparing a photoimprinted film, a composition for forming a photoimprinted film and a photoimprinted film comprising a dielectric constant of less than about 3.5. The method includes providing a material film having a composition including at least one silica source capable of being sol-gel processed, at least one photoactive compound and at least one solvent; and water. The composition contains less than about 0.1% by weight of an added acid. A mold having mold features is provided. The mold is positioned in sufficient contact with the material film to allow the material to contact at least a portion of the mold features. The material film is then exposed to a radiation source and the film is cured to form a solidified material film. The mold is separated from the solidified material, wherein the material includes film features corresponding to the mold features.Type: ApplicationFiled: April 26, 2007Publication date: October 30, 2008Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Thomas John Markley, Scott Jeffrey Weigel, Christine Peck Kretz
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Patent number: 7442232Abstract: Adsorbents and methods of use thereof are provided. One representative, among others, includes an adsorbent having an alkali metal promoted, mixed trivalent layered double hydroxide (LDH) composition. When the mixed trivalent layered double hydroxide (LDH) composition is heated to a temperature ranging from about 300° C. to 450° C., an the adsorbent having an adsorption capacity of at least 0.8 millimoles of CO2 adsorbed per gram of adsorbent is formed.Type: GrantFiled: June 19, 2003Date of Patent: October 28, 2008Assignee: Georgia Tech Research CorporationInventors: Mark G. White, Alexei V Iretski, Scott Jeffrey Weigel, Robert Ling Chiang, Jeffrey Richard Brzozowski
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Patent number: 7421885Abstract: A method and apparatus for determining pore size distribution and/or the presence of at least one killer pore in at least a portion of a porous film deposited upon a substrate are disclosed herein. In one embodiment, there is provided a method for determining pore size distribution comprising: providing the substrate having the film deposited thereupon wherein the film comprises pores and wherein the pores have a first volume; exposing the film to an adsorbate at a temperature and a pressure sufficient to provide condensation of the adsorbate in pores and wherein the pores after the exposing step have a second volume; and measuring the difference between the first and the second volume using a volumetric technique; and calculating the pore size and pore volume using the change in the first and the second volume, the pressure, and a model that relates pressure to pore diameter.Type: GrantFiled: June 28, 2005Date of Patent: September 9, 2008Assignee: Air Products and Chemicals, Inc.Inventors: Ronald Joseph Kitzhoffer, Scott Jeffrey Weigel, Charles Gardner Coe, Michael Francis Kimak, James Edward MacDougall, John Francis Kirner
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Publication number: 20080199977Abstract: A method for restoring a dielectric constant of a layer of a silicon-containing dielectric material having a first dielectric constant and at least one surface, wherein the first dielectric constant of the layer of silicon-containing dielectric material has increased to a second dielectric constant, the method comprising the steps of: contacting the at least one surface of the layer of silicon-containing dielectric material with a silicon-containing fluid; and exposing the at least one surface of the layer of silicon-containing dielectric material to an energy source selected from the group consisting of: UV radiation, heat, and an electron beam, wherein the layer of silicon-containing dielectric material has a third dielectric constant that is lower than the second dielectric constant after exposing the layer of silicon-containing dielectric material to the energy source.Type: ApplicationFiled: January 31, 2008Publication date: August 21, 2008Applicant: Air Products and Chemicals, Inc.Inventors: Scott Jeffrey Weigel, Mark Leonard O'Neill, Raymond Nicholas Vrtis, Dino Sinatore
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Patent number: 7307343Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (?) a dielectric constant of about 3.7 or less; a normalized wall elastic modulus (E0?), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1.95 and a normalized wall elastic modulus (E0?), derived in part from the dielectric constant of the material, of greater than about 26 GPa.Type: GrantFiled: May 30, 2002Date of Patent: December 11, 2007Assignee: Air Products and Chemicals, Inc.Inventors: John Francis Kirner, James Edward MacDougall, Brian Keith Peterson, Scott Jeffrey Weigel, Thomas Alan Deis, Martin Devenney, C. Eric Ramberg, Konstantinos Chondroudis, Keith Cendak
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Patent number: 7294585Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.Type: GrantFiled: July 11, 2006Date of Patent: November 13, 2007Assignee: Air Products and Chemicals, Inc.Inventors: Brian Keith Peterson, John Francis Kirner, Scott Jeffrey Weigel, James Edward MacDougall, Lisa Deis, legal representative, Thomas Albert Braymer, Keith Douglas Campbell, Martin Devenney, C. Eric Ramberg, Konstantinos Chondroudis, Keith Cendak, Thomas Alan Deis, deceased
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Patent number: 7265062Abstract: A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution.Type: GrantFiled: August 7, 2003Date of Patent: September 4, 2007Assignees: Applied Materials, Inc., Air Products and Chemicals, Inc.Inventors: Robert P. Mandal, Alexandros T. Demos, Timothy Weidman, Michael P. Nault, Nikolaos Bekiaris, Scott Jeffrey Weigel, Lee A. Senecal, James E. Mac Dougall, Hareesh Thridandam
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Patent number: 7186613Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (?) a dielectric constant of about 3.7 or less; a normalized wall elastic modulus (E0?), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1.95 and a normalized wall elastic modulus (E0?), derived in part from the dielectric constant of the material, of greater than about 26 GPa.Type: GrantFiled: October 13, 2004Date of Patent: March 6, 2007Assignee: Air Products And Chemicals, Inc.Inventors: John Francis Kirner, James Edward MacDougall, Brian Keith Peterson, Scott Jeffrey Weigel, Thomas Alan Deis, Martin Devenney, C. Eric Ramberg, Konstantinos Chondroudis, Keith Cendak
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Patent number: 7122880Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.Type: GrantFiled: May 20, 2003Date of Patent: October 17, 2006Assignee: Air Products and Chemicals, Inc.Inventors: Brian Keith Peterson, John Francis Kirner, Scott Jeffrey Weigel, James Edward MacDougall, Lisa Deis, Thomas Albert Braymer, Keith Douglas Campbell, Martin Devenney, C. Eric Ramberg, Konstantinos Chondroudis, Keith Cendak
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Publication number: 20060005608Abstract: A method and apparatus for determining pore size distribution and/or the presence of at least one killer pore in at least a portion of a porous film deposited upon a substrate are disclosed herein. In one embodiment, there is provided a method for determining pore size distribution comprising: providing the substrate having the film deposited thereupon wherein the film comprises pores and wherein the pores have a first volume; exposing the film to an adsorbate at a temperature and a pressure sufficient to provide condensation of the adsorbate in pores and wherein the pores after the exposing step have a second volume; and measuring the difference between the first and the second volume using a volumetric technique; and calculating the pore size and pore volume using the change in the first and the second volume, the pressure, and a model that relates pressure to pore diameter.Type: ApplicationFiled: June 28, 2005Publication date: January 12, 2006Inventors: Ronald Joseph Kitzhoffer, Scott Jeffrey Weigel, Charles Gardner Coe, Michael Francis Kimak, James Edward MacDougall, John Francis Kirner