Abstract: A split barrier layer enables copper interconnect wires to be used in conjunction with low-k dielectric films by preventing the diffusion of N—H base groups into photoresists where they can render the photoresist insoluble. The split barrier layer is disposed between the copper and the low-k dielectric and includes a nitrogen-containing, oxygen-free film which contacts the copper, and an oxygen-containing, nitrogen-free film which contacts the low-k dielectric film. The nitrogen-containing film prevents the formation of undesirable copper oxides, and the oxygen-containing film prevents the diffusion of N—H base groups into the low-k dielectric films. The oxygen-containing film may be an oxygen-doped silicon carbide film in an exemplary embodiment. In another embodiment, a film stack of low-k dielectric films includes an etch-stop layer and hardmask each formed of oxygen-doped silicon carbide.

Abstract: A method for analyzing a semiconductor surface having patterned features on the surface is disclosed. At least one patterned feature is scanned to produce a scanned waveform signal having signal segments corresponding to characteristic surface portions of the patterned feature. The signal segments are processed using an auto-correlation function to produce an auto-correlation signal for each characteristic surface portion of the patterned feature. A reference signal having signal segments corresponding to characteristic surface portions of a known patterned feature is provided and each segment of the auto-correlation signal is compared to the respective signal segments of the reference signal.

Abstract: A patterned transfer process in the manufacture of a semiconductor device is monitored. Patterned features formed on a semiconductor layer to be etched are scanned for generating a first amplitude modulated waveform intensity signal. The first amplitude modulated waveform intensity signal is sampled to extract a first measurement population of critical dimension measurements. The patterned features are etched and then scanned for generating a second amplitude modulated waveform intensity signal. The second amplitude modulated waveform intensity signal is then sampled to extract a second measurement population of critical dimension measurements, which are then cross-correlated to obtain correlation values of the etching process.