Abstract: The invention involves new syntheses for poly(methyl- and ethyl-silyne). The invention also includes silicon carbide (SiC) ceramics that can be produced from poly(methylsilyne), as well as other ceramics, which can be produced from these precursors by modified processing conditions.

Abstract: High and ultrahigh molecular weight (MW) homo- and copolymers having a three-dimensional random network structure are disclosed. The polymers have recurring structural units of the general formula [AR]n, wherein A can be carbon, silicon, germanium, tin atoms, or other elements and compounds. R can be the same as or different from A (in each repeating unit), and can be hydrogen, saturated linear or branched-chain hydrocarbons containing from about 1 to about 30 carbon atoms, unsaturated ring-containing or ring hydrocarbons containing from about 5 to about 14 carbon atoms in the ring, each in substituted or unsubstituted form, polymer chain groups having at least 20 recurring structural units, halogens, or other elements or compounds. The number “n” can be at least 20, and the high MW polymers have a molecular weight of at least 10,000 daltons, e.g., about 30,000 daltons, and as high as 1,000,000 or more daltons.

Abstract: The invention involves new syntheses for poly(methyl- and ethyl-silyne). The invention also includes silicon carbide (SiC) ceramics that can be produced from poly(methylsilyne), as well as other ceramics, which can be produced from these precursors by modified processing conditions.

Abstract: The invention involves new syntheses for poly(methyl- and ethyl-silyne). The invention also includes silicon carbide (SiC) ceramics that can be produced from poly(methylsilyne), as well as other ceramics, which can be produced from these precursors by modified processing conditions.

Abstract: A semiconductor device is formed from a semiconductor on insulator substrate, with the insulator or dielectric layer being formed from a polymer precursor to ceramic. The polymer precursor to ceramic may be SiC, diamond, or diamond-like carbon. The resulting device has improved thermal properties, smoothness, dielectric properties, ease of processing, and performance. A method of making the semiconductor device is also disclosed.

Abstract: High and ultrahigh molecular weight (MW) homo- and copolymers having a three-dimensional random network structure are disclosed. The polymers have recurring structural units of the general formula [AR]n, wherein A can be carbon, silicon, germanium, tin atoms, or other elements and compounds. R can be the same as or different from A (in each repeating unit), and can be hydrogen, saturated linear or branched-chain hydrocarbons containing from about 1 to about 30 carbon atoms, unsaturated ring-containing or ring hydrocarbons containing from about 5 to about 14 carbon atoms in the ring, each in substituted or unsubstituted form, polymer chain groups having at least 20 recurring structural units, halogens, or other elements or compounds. The number “n” can be at least 20, and the high MW polymers have a molecular weight of at least 10,000 daltons, e.g., about 30,000 daltons, and as high as 1,000,000 or more daltons.