Patents by Inventor Scott K. Montgomery

Scott K. Montgomery has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dilution doped integrated circuit resistors
    Patent number: 9991120
    Abstract: A process for forming an integrated circuit with a dilution doped resistor with a resistance that may be tuned by partially blocking the implant used to dope the resistor. A process for forming an integrated circuit with a dilution doped polysilicon resistor by partially blocking the resistor dopant implant from a portion of the polysilicon resistor body.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: June 5, 2018
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Scott K. Montgomery, Scott R. Summerfelt
  • DILUTION DOPED INTEGRATED CIRCUIT RESISTORS
    Publication number: 20150187583
    Abstract: A process for forming an integrated circuit with a dilution doped resistor with a resistance that may be tuned by partially blocking the implant used to dope the resistor. A process for forming an integrated circuit with a dilution doped polysilicon resistor by partially blocking the resistor dopant implant from a portion of the polysilicon resistor body.
    Type: Application
    Filed: December 19, 2014
    Publication date: July 2, 2015
    Inventors: Scott K. Montgomery, Scott R. Summerfelt
  • Integrated circuit structure with capacitor and resistor and method for forming
    Patent number: 8907446
    Abstract: An integrated circuit structure with a metal-to-metal capacitor and a metallic device such as a resistor, effuse, or local interconnect where the bottom plate of the capacitor and the metallic device are formed with the same material layers. A process for forming a metallic device along with a metal-to-metal capacitor with no additional manufacturing steps.
    Type: Grant
    Filed: May 19, 2010
    Date of Patent: December 9, 2014
    Assignee: Texas Instruments Incorporated
    Inventors: Scott R. Summerfelt, Byron L. Williams, Scott K. Montgomery, James Klawinsky, Asad M. Haider
  • METHOD FOR FORMING INTEGRATED CIRCUIT STRUCTURE WITH CAPACITOR AND RESISTOR AND METHOD FOR FORMING
    Publication number: 20130302965
    Abstract: An integrated circuit structure with a metal-to-metal capacitor and a metallic device such as a resistor, effuse, or local interconnect where the bottom plate of the capacitor and the metallic device are formed with the same material layers. A process for forming a metallic device along with a metal-to-metal capacitor with no additional manufacturing steps.
    Type: Application
    Filed: July 1, 2013
    Publication date: November 14, 2013
    Inventors: Scott R. SUMMERFELT, Byron L. WILLIAMS, Scott K. MONTGOMERY, James KLAWINSKY, Asad M. HAIDER
  • Integrated circuit structure with capacitor and resistor and method for forming
    Publication number: 20100295149
    Abstract: An integrated circuit structure with a metal-to-metal capacitor and a metallic device such as a resistor, effuse, or local interconnect where the bottom plate of the capacitor and the metallic device are formed with the same material layers. A process for forming a metallic device along with a metal-to-metal capacitor with no additional manufacturing steps.
    Type: Application
    Filed: May 19, 2010
    Publication date: November 25, 2010
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Scott R. SUMMERFELT, Byron L. WILLIAMS, Scott K. MONTGOMERY, James KLAWINSKY, Asad M. HAIDER
  • Diode having a double implanted guard ring
    Patent number: 6894318
    Abstract: The present invention provides a diode 200 that includes a substrate 215 doped with a first type dopant and a double implanted guard ring 245 located within the substrate and doped with a second type dopant opposite the first type dopant and having a first doped profile region 245a and a second doped profile region 245b. The present invention also includes a method of manufacturing this diode and an integrated circuit that utilizes this diode 200 within a CMOS and bipolar transistor integrated circuit 600.
    Type: Grant
    Filed: August 20, 2003
    Date of Patent: May 17, 2005
    Assignee: Texas Instruments Incorporated
    Inventors: Ming-Yeh Chuang, William C. Loftin, Scott K. Montgomery