Abstract: String trimmers are provided. A stringer trimmer includes a housing; a control board including control circuitry; a frame coupled to the control board; and an isolator disposed between the housing and the frame, wherein the frame is supported relative to the housing by the isolator, and wherein the isolator comprises a shock absorbing material.

Abstract: The present disclosure relates to a transistor device having source and drain regions within a substrate. A gate electrode is between the source and drain regions. A spacer has a lower lateral portion along an upper surface of the substrate between the gate electrode and the drain region, a vertical portion extending along a sidewall of the gate electrode, and an upper lateral portion extending from the vertical portion to an outermost sidewall directly over the gate electrode. A field plate is disposed along an upper surface and a sidewall of the spacer and is separated from the gate electrode and the substrate by the spacer. A first ILD layer overlies the substrate, the gate electrode, and the field plate. A first conductive contact has opposing outermost sidewalls intersecting a first horizontally extending surface of the field plate between the gate electrode and the drain region.

Abstract: The present disclosure relates to a transistor device having source and drain regions within a substrate. A gate electrode is between the source and drain regions. A spacer has a lower lateral portion along an upper surface of the substrate between the gate electrode and the drain region, a vertical portion extending along a sidewall of the gate electrode, and an upper lateral portion extending from the vertical portion to an outermost sidewall directly over the gate electrode. A field plate is disposed along an upper surface and a sidewall of the spacer and is separated from the gate electrode and the substrate by the spacer. A first ILD layer overlies the substrate, the gate electrode, and the field plate. A first conductive contact has opposing outermost sidewalls intersecting a first horizontally extending surface of the field plate between the gate electrode and the drain region.

Abstract: The present disclosure relates to a high voltage transistor device having a thin polysilicon film field plate, and an associated method of formation. In some embodiments, the high voltage transistor device has a gate electrode disposed between source and drain regions and separated from a substrate by a gate dielectric. A spacer is disposed along an upper surface of the substrate. The spacer extends along a first gate sidewall closer to the drain region, crosses over an upper edge of the gate electrode, and further extends laterally to cover a portion of an upper surface of the gate electrode. A field plate including a polysilicon thin film is disposed along upper and sidewall surfaces of the spacer so that the polysilicon thin film is separated from the gate electrode and the substrate by the spacer. The thin polysilicon film field plate improves the breakdown voltage of the transistor device.

Abstract: The present disclosure relates to a high voltage transistor device having a thin polysilicon film field plate, and an associated method of formation. In some embodiments, the high voltage transistor device has a gate electrode disposed between source and drain regions and separated from a substrate by a gate dielectric. A spacer is disposed along an upper surface of the substrate. The spacer extends along a first gate sidewall closer to the drain region, crosses over an upper edge of the gate electrode, and further extends laterally to cover a portion of an upper surface of the gate electrode. A field plate including a polysilicon thin film is disposed along upper and sidewall surfaces of the spacer so that the polysilicon thin film is separated from the gate electrode and the substrate by the spacer. The thin polysilicon film field plate improves the breakdown voltage of the transistor device.

Abstract: A package and lock combination includes a package having an unopened state and including an aperture, and a lock contained within the package. The lock includes a first portion and a second portion moveable relative to the first portion for operating the lock. The first portion is substantially fixed within the package, and the second portion extends through the aperture so that the lock is operable while the lock is contained within the package and the package is in the unopened state.

Abstract: A package and lock combination includes a package having an unopened state and including an aperture, and a lock contained within the package. The lock includes a first portion and a second portion moveable relative to the first portion for operating the lock. The first portion is substantially fixed within the package, and the second portion extends through the aperture so that the lock is operable while the lock is contained within the package and the package is in the unopened state.

Abstract: The present invention is directed to antigenic peptides and peptide compositions selected from the Membrane glycoprotein (M), the Spike glycoprotein (S), and the Nucleocapsid (N) protein antigens of the SARS coronavirus (SCoV). The present invention is also directed to methods of use of the peptides of the invention, e.g., for the detection of SARS-associated antibodies. Detection methods include enzyme-linked immunosorbent assay (ELISA) or other immunoassay procedures.

Abstract: The present invention is directed to antigenic peptides and peptide compositions selected from the Membrane glycoprotein (M), the Spike glycoprotein (S), and the Nucleocapsid (N) protein antigens of the SARS coronavirus (SCoV). The present invention is also directed to methods of use of the peptides of the invention, e.g., for the detection of SARS-associated antibodies. Detection methods include enzyme-linked immunosorbent assay (ELISA) or other immunoassay procedures.