Abstract: String trimmers are provided. A stringer trimmer includes a housing; a control board including control circuitry; a frame coupled to the control board; and an isolator disposed between the housing and the frame, wherein the frame is supported relative to the housing by the isolator, and wherein the isolator comprises a shock absorbing material.

Abstract: The present disclosure relates to a transistor device having source and drain regions within a substrate. A gate electrode is between the source and drain regions. A spacer has a lower lateral portion along an upper surface of the substrate between the gate electrode and the drain region, a vertical portion extending along a sidewall of the gate electrode, and an upper lateral portion extending from the vertical portion to an outermost sidewall directly over the gate electrode. A field plate is disposed along an upper surface and a sidewall of the spacer and is separated from the gate electrode and the substrate by the spacer. A first ILD layer overlies the substrate, the gate electrode, and the field plate. A first conductive contact has opposing outermost sidewalls intersecting a first horizontally extending surface of the field plate between the gate electrode and the drain region.

Abstract: Methods, systems, and other embodiments for protecting a shared resource in a data processing system are described herein. In one embodiment, when responding to a request that requires use of the shared resource, determine whether a previously established sleep period for the shared resource has expired. If so, determine a health status of the shared resource based on one or more of applying an asymptotic transform to a percentage of time that a processing unit is idle and applying a linear transform to a session count for the shared resource. Then, determine whether the health status is sufficient to permit responding to the request; and if not, (i) determining an appropriate sleep period for the shared resource, (ii) initiating a sleep state for the shared resource for a period substantially equal to the determined appropriate sleep period; and (iii) exiting the sleep state and responding to the request.

Abstract: The present disclosure relates to a transistor device having source and drain regions within a substrate. A gate electrode is between the source and drain regions. A spacer has a lower lateral portion along an upper surface of the substrate between the gate electrode and the drain region, a vertical portion extending along a sidewall of the gate electrode, and an upper lateral portion extending from the vertical portion to an outermost sidewall directly over the gate electrode. A field plate is disposed along an upper surface and a sidewall of the spacer and is separated from the gate electrode and the substrate by the spacer. A first ILD layer overlies the substrate, the gate electrode, and the field plate. A first conductive contact has opposing outermost sidewalls intersecting a first horizontally extending surface of the field plate between the gate electrode and the drain region.

Abstract: The present disclosure relates to a high voltage transistor device having a thin polysilicon film field plate, and an associated method of formation. In some embodiments, the high voltage transistor device has a gate electrode disposed between source and drain regions and separated from a substrate by a gate dielectric. A spacer is disposed along an upper surface of the substrate. The spacer extends along a first gate sidewall closer to the drain region, crosses over an upper edge of the gate electrode, and further extends laterally to cover a portion of an upper surface of the gate electrode. A field plate including a polysilicon thin film is disposed along upper and sidewall surfaces of the spacer so that the polysilicon thin film is separated from the gate electrode and the substrate by the spacer. The thin polysilicon film field plate improves the breakdown voltage of the transistor device.

Abstract: Methods, systems, and other embodiments for protecting a shared resource in a data processing system are described herein. In one embodiment, when responding to a request that requires use of the shared resource, determine whether a previously established sleep period for the shared resource has expired. If so, determine a health status of the shared resource based on one or more of applying an asymptotic transform to a percentage of time that a processing unit is idle and applying a linear transform to a session count for the shared resource. Then, determine whether the health status is sufficient to permit responding to the request; and if not, (i) determining an appropriate sleep period for the shared resource, (ii) initiating a sleep state for the shared resource for a period substantially equal to the determined appropriate sleep period; and (iii) exiting the sleep state and responding to the request.

Abstract: Systems, apparatuses, and methods for preventing the use of a shared resource (such as a database) by a user or group of users from causing other users to experience unsatisfactory or unreliable access to that resource or to related, impacted resources (such as a communications network or processor). In some embodiments, the invention is directed to systems, apparatuses, and methods that may be implemented in a multi-tenant system in order to prevent a single user or the users associated with an account from degrading the system performance experienced by other users, either by intentional or inadvertant misuse of a shared database, and to prevent an overload condition from causing the system or database to fail abruptly.

Abstract: The present disclosure relates to a high voltage transistor device having a thin polysilicon film field plate, and an associated method of formation. In some embodiments, the high voltage transistor device has a gate electrode disposed between source and drain regions and separated from a substrate by a gate dielectric. A spacer is disposed along an upper surface of the substrate. The spacer extends along a first gate sidewall closer to the drain region, crosses over an upper edge of the gate electrode, and further extends laterally to cover a portion of an upper surface of the gate electrode. A field plate including a polysilicon thin film is disposed along upper and sidewall surfaces of the spacer so that the polysilicon thin film is separated from the gate electrode and the substrate by the spacer. The thin polysilicon film field plate improves the breakdown voltage of the transistor device.

Abstract: Systems, apparatuses, and methods for preventing the use of a shared resource (such as a database) by a user or group of users from causing other users to experience unsatisfactory or unreliable access to that resource or to related, impacted resources (such as a communications network or processor). In some embodiments, the invention is directed to systems, apparatuses, and methods that may be implemented in a multi-tenant system in order to prevent a single user or the users associated with an account from degrading the system performance experienced by other users, either by intentional or inadvertant misuse of a shared database, and to prevent an overload condition from causing the system or database to fail abruptly.

Abstract: A kinetic energy penetrator includes an elongated main body, a conical tip joined to the main body at the front end thereof, and fins located at the tail end of the main body. The tip is made of a hardmetal material which comprises hard particles including a first material and a binder matrix including a second, different material. A volume of the second material is from 3% to 40% of total volume of the hardmetal material. The hard particles include carbides, nitrides, carbonitrides, or borides, or combinations thereof. The binder matrix includes Re, a Ni-base superalloy, Ni, Co, W, Ta, or Mo, or combinations thereof. The main body is made of a high density metal or alloy (Density>16.0 g/cc), such as pure W, W—Re alloy, W—Mo alloy, W—Mo—Re alloy, W—Ni alloy, W—Co alloy, W—Ni—Fe alloy, W—Ni—Co—Fe alloy, depleted U.

Abstract: A package and lock combination includes a package having an unopened state and including an aperture, and a lock contained within the package. The lock includes a first portion and a second portion moveable relative to the first portion for operating the lock. The first portion is substantially fixed within the package, and the second portion extends through the aperture so that the lock is operable while the lock is contained within the package and the package is in the unopened state.

Abstract: A kinetic energy penetrator includes an elongated main body, a conical tip joined to the main body at the front end thereof, and fins located at the tail end of the main body. The tip is made of a hardmetal material which comprises hard particles including a first material and a binder matrix including a second, different material. A volume of the second material is from 3% to 40% of total volume of the hardmetal material. The hard particles include carbides, nitrides, carbonitrides, or borides, or combinations thereof. The binder matrix includes Re, a Ni-base superalloy, Ni, Co, W, Ta, or Mo, or combinations thereof. The main body is made of a high density metal or alloy (Density>16.0 g/cc), such as pure W, W—Re alloy, W—Mo alloy, W—Mo—Re alloy, W—Ni alloy, W—Co alloy, W—Ni—Fe alloy, W—Ni—Co—Fe alloy, depleted U.

Abstract: Friction stir welding tools made of a hardmetal including hard particles having a first material and a binder matrix having a second, different material.

Abstract: Hardmetal compositions each including hard particles having a first material and a binder matrix having a second, different material comprising rhenium or a Ni-based superalloy. Tungsten may also be used a binder matrix material. A two-step sintering process may be used to fabricate such hardmetals at relatively low sintering temperatures in the solid-state phase to produce substantially fully-densified hardmetals. A hardmetal coating or structure may be formed on a surface by using a thermal spray method.

Abstract: Hardmetal compositions each including hard particles having a first material and a binder matrix having a second, different material comprising rhenium or a Ni-based superalloy. Tungsten may also be used a binder matrix material. A two-step sintering process may be used to fabricate such hardmetals at relatively low sintering temperatures in the solid-state phase to produce substantially fully-densified hardmetals. A hardmetal coating or structure may be formed on a surface by using a thermal spray method.